SGS Thomson Microelectronics 74VHCU04MTR, 74VHCU04M, 74VHCU04TTR Datasheet

74VHCU04
HEX INVERTER (SINGLE STAGE)
HIGH SPEED: t
LOW POWER DISSIPATION:
I
= 2 µA (MAX.) at TA=25°C
CC
HIGH NOISE IMMUNITY:
V
= V
NIH
POWER DOWN PROTECTION ON INPUTS
SYMMETRICAL OUTPUT IMPED ANCE:
|I
| = IOL = 8 mA (MIN)
OH
BALANCED PROPAGATION DELAYS:
t
t
PLH
OPERATING VOLTAGE RANGE:
V
(OPR) = 2V to 5.5V
CC
PIN AND FUNCTION COMPATIBLE WITH
= 10% VCC (MIN.)
NIL
PHL
= 3.5 ns (TYP.) at VCC = 5V
PD
74 SERIES 04
IMPROVED LATCH-UP IMMUNITY
LOW NOISE: V
= 0.8V (MAX.)
OLP
DESCRIPTION
The 74VHCU04 is an advanced high-speed CMOS HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C
2
MOS technology. As the internal circuit is composed of a single stage inverter, it can be used in analog applications suc h a s cr yst a l os c illator.
TSSOPSOP
ORDER CODES
PACKAGE TUBE T & R
SOP 74VHCU04M 74VHCU04MTR
TSSOP 74VHCU04TTR
Power down protection is provided on all inputs and outputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be us ed to interf ac e 5V to 3V since al l inputs are equipped with TTL threshold. All inputs and outputs are equipped with protection circuits against stat ic discharge, giving them 2KV ESD immunity and transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/8November 2001
74VHCU04
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 3, 5, 9, 1 1,
13
2, 4, 6, 8, 10,
12
7 GND Ground (0V)
14
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
I
or I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current DC Output Current
O
DC VCC or Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
1A to 6A Data Inputs
1Y to 6Y Data Outputs
V
CC
Positive Supply Voltage
AY
LH
HL
-0.5 to +7.0 V
-0.5 to +7.0 V V
- 20 mA
± 20 mA ± 25 mA ± 50 mA
-65 to +150 °C
300 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V
T
dt/dv
1) VIN from 30 % to 70% of Vcc
2/8
Supply Voltage
CC
Input Voltage
I
Output Voltage 0 to V
O
Operating Temperature
op
Input Rise and Fall Time (see note 1) (V (V
= 3.3 ± 0. 3 V )
CC
= 5.0 ± 0.5V)
CC
2.0 to 5.5 V 0 to 5.5 V
CC
-55 to 125 °C 0 to 100
0 to 20
V
ns/V ns/V
DC SPECIFICATIONS
Symbol Parameter
V
V
V
V
I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current Quiescent Supply
CC
Current
74VHCU04
Test Condition Value
T
= 25°C
V
CC
(V)
A
Min. Typ. Max. Min. Max. Min. Max.
2.0 1.7 1.7 1.7
3.0 to
5.5
0.8V
CC
2.0 0.3 0.3 0.3
3.0 to
5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
0 to
5.5
5.5
=-50 µA
I
O
I
=-50 µA
O
I
=-50 µA
O
I
=-4 mA
O
I
=-8 mA
O
IO=50 µA I
=50 µA
O
I
=50 µA
O
I
=4 mA
O
I
=8 mA
O
V
= 5.5V or GND
I
= VCC or GND
V
I
1.8 2.0 1.8 1.8
2.7 3.0 2.7 2.7
4.0 4.5 4.0 4.0
2.58 2.48 2.48
3.94 3.8 3.8
0.2V
0.0 0.2 0.2 0.2
0.0 0.3 0.3 0.3
0.0 0.5 0.5 0.5
-40 to 85°C -55 to 125°C
CC
0.8V
CC
0.2V
CC
0.8V
CC
0.36 0.44 0.44
0.36 0.44 0.44
± 0.1 ± 1.0 ± 1.0 µA
22020µA
0.2V
CC
Unit
V
V
V
V
AC ELECTRICAL CHARACTERISTICS (Input t
= tf = 3ns)
r
Test Condition Value
= 25°C
Symbol Parameter
t
Propagation Delay
PLH PHL
Time
0.5V
t
(*) Vol tage range is 3. 3V ± 0.3V (**) Voltage range is 5.0V ±
CC
(V)
C
(pF)
L
V
3.3(*) 15 5.0 8.9 1.0 10.5 1.0 10.5
3.3(*) 50 7.5 11.4 1.0 13.0 1.0 13.0
5.0(**) 15 3.5 5.5 1.0 6.5 1.0 6.5
5.0(**) 50 5.0 7.0 1.0 8.0 1.0 8.0
T
A
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
Unit
ns
ns
CAPACITIVE CHARACTERISTICS
Test Condition Value
T
Symbol Parameter
C
C
Input Capacitance
IN
Power Dissipation
PD
Capacitance (note 1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
= 25°C
A
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
5101010pF
13 pF
= CPD x VCC x fIN + ICC/6 (per gate)
CC(opr)
Unit
3/8
74VHCU04
DYNAMIC SWITCHING CHARACTERISTICS
Test Condition Value
T
Symbol Parameter
V V
Dynamic Low
OLP
Voltage Quiet
OLV
Output (note 1, 2)
V
CC
(V)
5.0
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
0.5 0.8
-0.8 -0.5
Dynamic High
V
IHD
Voltage Input
5.0 4.0
= 50 pF
C
L
(note 1, 3) Dynamic Low
V
ILD
Voltage Input
5.0 0.8
(note 1, 3)
1) Worst c ase package .
2) Max number of outp ut s defined as (n). Data inp ut s are driven 0V to 5.0V, (n-1) outputs sw i tc hi ng and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to 5.0V. Inputs under test switching: 5.0V to threshold (V (V
), f=1MHz.
IHD
TEST CIRCUIT
-40 to 85°C -55 to 125°C
ILD
Unit
V
), 0V to threshold
CL =15/50pF or equivalent (i ncludes jig and probe capacitance) R
= Z
of pulse generator (typically 50)
T
OUT
4/8
WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)
74VHCU04
5/8
74VHCU04
SO-14 MECHANICAL DATA
DIM.
A 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064
b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45° (typ.)
D 8.55 8.75 0.336 0.344 E 5.8 6.2 0.228 0.244
e 1.27 0.050 e3 7.62 0.300
F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.68 0.026 S8° (max.)
MIN. TYP MAX. MIN. TYP. M AX.
mm. inch
6/8
PO13G
74VHCU04
TSSOP14 MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. M AX.
A 1.2 0.047
A1 0.05 0.15 0.002 0.004 0.006
A2 0.8 1 1.05 0.031 0.039 0.041
b 0.19 0.30 0.007 0.012
c 0.09 0.20 0.004 0.0089
D 4.9 5 5.1 0.193 0.197 0.201
E 6.2 6.4 6.6 0.244 0.252 0.260
E1 4.3 4.4 4.48 0.169 0.173 0.176
e 0.65 BSC 0.0256 BSC
K0° 8°0° 8°
L 0.45 0.60 0.75 0.018 0.024 0.030
A2
A
A1
b
e
c
K
L
E
D
E1
PIN 1 IDENTIFICATION
1
0080337D
7/8
74VHCU04
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