The 74VHCU04 is an advanced high-speed
CMOS HEX INVERTER fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology.
As the internal circuit is composed of a single
stage inverter, it can be used in analog
applications suc h a s cr yst a l os c illator.
TSSOPSOP
ORDER CODES
PACKAGETUBET & R
SOP74VHCU04M74VHCU04MTR
TSSOP74VHCU04TTR
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
device can be us ed to interf ac e 5V to 3V since al l
inputs are equipped with TTL threshold.
All inputs and outputs are equipped with
protection circuits against stat ic discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/8November 2001
74VHCU04
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN NoSYMBOLNAME AND FUNCTION
1, 3, 5, 9, 1 1,
13
2, 4, 6, 8, 10,
12
7GNDGround (0V)
14
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
V
V
V
I
I
OK
I
I
or I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCC or Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
1A to 6AData Inputs
1Y to 6YData Outputs
V
CC
Positive Supply Voltage
AY
LH
HL
-0.5 to +7.0V
-0.5 to +7.0V
V
- 20mA
± 20mA
± 25mA
± 50mA
-65 to +150°C
300°C
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
V
T
dt/dv
1) VIN from 30 % to 70% of Vcc
2/8
Supply Voltage
CC
Input Voltage
I
Output Voltage0 to V
O
Operating Temperature
op
Input Rise and Fall Time (see note 1) (V
(V
= 3.3 ± 0. 3 V )
CC
= 5.0 ± 0.5V)
CC
2.0 to 5.5V
0 to 5.5V
CC
-55 to 125°C
0 to 100
0 to 20
V
ns/V
ns/V
DC SPECIFICATIONS
SymbolParameter
V
V
V
V
I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current
Quiescent Supply
CC
Current
74VHCU04
Test ConditionValue
T
= 25°C
V
CC
(V)
A
Min.Typ. Max.Min.Max. Min. Max.
2.01.71.71.7
3.0 to
5.5
0.8V
CC
2.00.30.30.3
3.0 to
5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
0 to
5.5
5.5
=-50 µA
I
O
I
=-50 µA
O
I
=-50 µA
O
I
=-4 mA
O
I
=-8 mA
O
IO=50 µA
I
=50 µA
O
I
=50 µA
O
I
=4 mA
O
I
=8 mA
O
V
= 5.5V or GND
I
= VCC or GND
V
I
1.82.01.81.8
2.73.02.72.7
4.04.54.04.0
2.582.482.48
3.943.83.8
0.2V
0.00.20.20.2
0.00.30.30.3
0.00.50.50.5
-40 to 85°C -55 to 125°C
CC
0.8V
CC
0.2V
CC
0.8V
CC
0.360.440.44
0.360.440.44
± 0.1± 1.0± 1.0µA
22020µA
0.2V
CC
Unit
V
V
V
V
AC ELECTRICAL CHARACTERISTICS (Input t
= tf = 3ns)
r
Test ConditionValue
= 25°C
SymbolParameter
t
Propagation Delay
PLH
PHL
Time
0.5V
t
(*) Vol tage range is 3. 3V ± 0.3V
(**) Voltage range is 5.0V ±
CC
(V)
C
(pF)
L
V
3.3(*)155.08.91.010.51.010.5
3.3(*)507.511.41.013.01.013.0
5.0(**)153.55.51.06.51.06.5
5.0(**)505.07.01.08.01.08.0
T
A
-40 to 85°C -55 to 125°C
Min.Typ. Max.Min.Max. Min. Max.
Unit
ns
ns
CAPACITIVE CHARACTERISTICS
Test ConditionValue
T
SymbolParameter
C
C
Input Capacitance
IN
Power Dissipation
PD
Capacitance
(note 1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
= 25°C
A
-40 to 85°C -55 to 125°C
Min.Typ. Max.Min.Max. Min. Max.
5101010pF
13pF
= CPD x VCC x fIN + ICC/6 (per gate)
CC(opr)
Unit
3/8
74VHCU04
DYNAMIC SWITCHING CHARACTERISTICS
Test ConditionValue
T
SymbolParameter
V
V
Dynamic Low
OLP
Voltage Quiet
OLV
Output (note 1, 2)
V
CC
(V)
5.0
= 25°C
A
Min.Typ. Max.Min.Max. Min. Max.
0.50.8
-0.8-0.5
Dynamic High
V
IHD
Voltage Input
5.04.0
= 50 pF
C
L
(note 1, 3)
Dynamic Low
V
ILD
Voltage Input
5.00.8
(note 1, 3)
1) Worst c ase package .
2) Max number of outp ut s defined as (n). Data inp ut s are driven 0V to 5.0V, (n-1) outputs sw i tc hi ng and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to 5.0V. Inputs under test switching: 5.0V to threshold (V
(V
), f=1MHz.
IHD
TEST CIRCUIT
-40 to 85°C -55 to 125°C
ILD
Unit
V
), 0V to threshold
CL =15/50pF or equivalent (i ncludes jig and probe capacitance)
R
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