SGS Thomson Microelectronics 74VHCU04MTR, 74VHCU04M, 74VHCU04TTR Datasheet

74VHCU04

HEX INVERTER (SINGLE STAGE)

■ HIGH SPEED: t

■ LOW POWER DISSIPATION:

I

= 2 µA (MAX.) at TA=25°C

CC

■ HIGH NOISE IMMUNITY:

V

= V

NIH

■ POWER DOWN PROTECTION ON INPUTS

■ SYMMETRICAL OUTPUT IMPED ANCE:

|I

| = IOL = 8 mA (MIN)

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

■ OPERATING VOLTAGE RANGE:

V

(OPR) = 2V to 5.5V

CC

■ PIN AND FUNCTION COMPATIBLE WITH

= 10% VCC (MIN.)

NIL

PHL

= 3.5 ns (TYP.) at VCC = 5V

PD

74 SERIES 04

■ IMPROVED LATCH-UP IMMUNITY

■ LOW NOISE: V

= 0.8V (MAX.)

OLP

DESCRIPTION

The 74VHCU04 is an advanced high-speed
CMOS HEX INVERTER fabricated with
sub-micron silicon gate and double-layer metal
wiring C

2

MOS technology.
As the internal circuit is composed of a single
stage inverter, it can be used in analog
applications suc h a s cr yst a l os c illator.

TSSOPSOP

ORDER CODES

PACKAGE TUBE T & R

SOP 74VHCU04M 74VHCU04MTR

TSSOP 74VHCU04TTR

Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
device can be us ed to interf ac e 5V to 3V since al l
inputs are equipped with TTL threshold.
All inputs and outputs are equipped with
protection circuits against stat ic discharge, giving
them 2KV ESD immunity and transient excess
voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/8November 2001

74VHCU04

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 3, 5, 9, 1 1,

13

2, 4, 6, 8, 10,

12

7 GND Ground (0V)

14

TRUTH TABLE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

I

OK

I

I

or I

CC

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCC or Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

1A to 6A Data Inputs

1Y to 6Y Data Outputs

V

CC

Positive Supply Voltage

AY

LH

HL

-0.5 to +7.0 V

-0.5 to +7.0 V
V

- 20 mA

± 20 mA
± 25 mA
± 50 mA

-65 to +150 °C

300 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V

V

T

dt/dv

1) VIN from 30 % to 70% of Vcc

2/8

Supply Voltage

CC

Input Voltage

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (see note 1) (V
(V

= 3.3 ± 0. 3 V )

CC

= 5.0 ± 0.5V)

CC

2.0 to 5.5 V
0 to 5.5 V

CC

-55 to 125 °C
0 to 100

0 to 20

V

ns/V
ns/V

DC SPECIFICATIONS

Symbol Parameter

V

V

V

V

I

High Level Input

IH

Voltage

Low Level Input

IL

Voltage

High Level Output

OH

Voltage

Low Level Output

OL

Voltage

I

Input Leakage

I

Current
Quiescent Supply

CC

Current

74VHCU04

Test Condition Value

T

= 25°C

V

CC

(V)

A

Min. Typ. Max. Min. Max. Min. Max.

2.0 1.7 1.7 1.7

3.0 to

5.5

0.8V

CC

2.0 0.3 0.3 0.3

3.0 to

5.5

2.0

3.0

4.5

3.0

4.5

2.0

3.0

4.5

3.0

4.5

0 to

5.5

5.5

=-50 µA

I

O

I

=-50 µA

O

I

=-50 µA

O

I

=-4 mA

O

I

=-8 mA

O

IO=50 µA
I

=50 µA

O

I

=50 µA

O

I

=4 mA

O

I

=8 mA

O

V

= 5.5V or GND

I

= VCC or GND

V

I

1.8 2.0 1.8 1.8

2.7 3.0 2.7 2.7

4.0 4.5 4.0 4.0

2.58 2.48 2.48

3.94 3.8 3.8

0.2V

0.0 0.2 0.2 0.2

0.0 0.3 0.3 0.3

0.0 0.5 0.5 0.5

-40 to 85°C -55 to 125°C

CC

0.8V

CC

0.2V

CC

0.8V

CC

0.36 0.44 0.44

0.36 0.44 0.44

± 0.1 ± 1.0 ± 1.0 µA

22020µA

0.2V

CC

Unit

V

V

V

V

AC ELECTRICAL CHARACTERISTICS (Input t

= tf = 3ns)

r

Test Condition Value

= 25°C

Symbol Parameter

t

Propagation Delay

PLH
PHL

Time

0.5V

t

(*) Vol tage range is 3. 3V ± 0.3V
(**) Voltage range is 5.0V ±

CC

(V)

C

(pF)

L

V

3.3(*) 15 5.0 8.9 1.0 10.5 1.0 10.5

3.3(*) 50 7.5 11.4 1.0 13.0 1.0 13.0

5.0(**) 15 3.5 5.5 1.0 6.5 1.0 6.5

5.0(**) 50 5.0 7.0 1.0 8.0 1.0 8.0

T

A

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

Unit

ns

ns

CAPACITIVE CHARACTERISTICS

Test Condition Value

T

Symbol Parameter

C

C

Input Capacitance

IN

Power Dissipation

PD

Capacitance
(note 1)

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

= 25°C

A

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

5101010pF

13 pF

= CPD x VCC x fIN + ICC/6 (per gate)

CC(opr)

Unit

3/8