SGS Thomson Microelectronics 74VHCU04 Datasheet
HEX INVERTER (SINGLE STAGE)
■ HIGHSPEED:t
■
LOW POWER DISSIPATION:
I
=2 µA (MAX.)at TA=25oC
CC
■
HIGHNOISEIMMUNITY:
V
NIH=VNIL
■ POWERDOWNPROTECTIONON INPUTS
■
SYMMETRICALOUTPUTIMPEDANCE:
|I
|=IOL=8 mA(MIN)
OH
■ BALANCEDPROPAGATIONDELAYS:
t
≅ t
PLH
■ OPERATINGVOLTAGERANGE:
(OPR)= 2Vto5.5V
V
CC
■ PINANDFUNCTIONCOMPATIBLEWITH
=10%VCC(MIN.)
PHL
74SERIES04
■ IMPROVEDLATCH-UPIMMUNITY
■ LOWNOISEV
DESCRIPTION
The 74VHCU04 is an advanced high-speed
CMOS HEX INVERTER fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology. It has similar high
speed performance of equivalent Bipolar
Schottky TTL combined with true CMOS low
=3.5ns(TYP.)atVCC=5V
PD
=0.8V(Max.)
OLP
74VHCU04
PRELIMINARY DATA
M
(Micro Package)
(TSSOPPackage)
ORDERCODES :
74VHCU04M
powerdissipation.
As the internal circuit is composed of a single
stage inverter, it can be used in analog
applicationssuch ascrystal oscillator.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2kV ESD immunity and transient excess
voltage.
T
PIN CONNECTION AND IEC LOGICSYMBOLS
June 1999
1/7
74VHCU04
INPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYMB OL NAME AND FUNCT I O N
1, 3, 5, 9,
1A to 6A Data Inputs
11, 13
2, 4, 6, 8,
1Y to 6Y Data Outputs
10, 12
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
TRUTH TABLE
AY
LH
HL
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Val u e Uni t
V
V
V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximumRatingsarethosevaluesbeyond whichdamage tothedevicemayoccur.Functionaloperationunderthese condition isnotimplied.
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current
DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
20 mA
±
25 mA
±
50 mA
±
o
C
o
C
RECOMMENDED OPERATINGCONDITIONS
Symb o l Para met er Value Un it
V
V
V
T
dt/dv
1)VINfrom30%to70%of V
2/7
Supply Voltage 2.0 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage 0 to V
O
Operating Temperature -40 to +85
op
(V
CC
CC
=3.3±0.3V)
=5.0±0.5V)
Input Rise and Fall Time (see note 1) (V
CC
CC
0 to 100
0to20
V
o
C
ns/V
ns/V
74VHCU04
DC SPECIFICATIONS
Symb o l Para met er Test C o n dit i o ns Val u e Uni t
T
V
CC
(V)
High Level Input
V
IH
Voltage
V
Low Level Input
IL
Voltage
V
High Level Output
OH
Voltage
Low Level Output
V
OL
Voltage
Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA
I
I
Quiescent Supply
I
CC
2.0 1.7 1.7
3.0 to 5.5 0.8V
2.0 0.3 0.3
3.0 to 5.5 0.2V
2.0 IO=-50 µA 1.8 2.0 1.8
3.0 I
4.5 I
3.0 I
4.5 I
=-50µA 2.7 3.0 2.7
O
=-50µA 4.0 4.5 4.0
O
=-4 mA 2.58 2.48
O
=-8 mA 3.94 3.8
O
2.0 IO=50 µ A 0.0 0.2 0.2
3.0 I
4.5 I
3.0 I
4.5 I
=50µA 0.0 0.3 0.3
O
=50µA 0.0 0.5 0.5
O
=4 mA 0.36 0.44
O
=8 mA 0.36 0.44
O
5.5 VI=VCCorGND 2 20 µA
Min. Typ. Max. Min. Max.
Current
=25oC -40 to 85oC
A
CC
0.8V
CC
CC
0.2V
CC
V
V
V
V
AC ELECTRICAL CHARACTERISTICS (Input tr=tf=3 ns)
Symbol Parameter Test Condition Value Unit
t
Propagation Delay
PLH
t
Time
PHL
(*) Voltagerangeis 3.3V± 0.3V
(**) Voltagerangeis 5V± 0.5V
V
3.3
3.3
5.0
5.0
CC
(V)
(**)
(**)
C
L
(pF)
(*)
15 5.0 8.9 1.0 10.5
(*)
50 7.5 11.4 1.0 13.0
T
=25oC -40 to 85oC
A
Min. Typ. Max. Min. Max.
15 3.5 5.5 1.0 6.5
50 5.0 7.0 1.0 8.0
ns
CAPACITIVE CHARACTERISTICS
Symb o l Para met er Test C o n dit i o ns Val u e Uni t
=25oC -40 to 85oC
T
A
Min. Typ. Max. Min. Max.
Input Capacitance 5 10 10
C
IN
Power Dissipation
C
PD
9pF
Capacitance (note 1)
1)CPDisdefined asthevalueoftheIC’sinternal equivalentcapacitance whichiscalculated fromtheoperating currentconsumption without load.(Referto
TestCircuit).Averageoperating current canbeobtained bythefollowingequation.I
(opr)= CPD• VCC• fIN+ICC/6(perGate)
CC
pF
3/7
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