SGS Thomson Microelectronics 74VHCT86A Datasheet
■ HIGHSPEED:t
■
LOW POWERDISSIPATION:
I
=2 µA (MAX.) atTA=25oC
CC
■
COMPATIBLEWITHTTL OUTPUTS:
V
=2V(MIN),VIL=0.8V(MAX)
IH
■ POWERDOWN PROTECTIONON INPUTS&
=5ns(TYP.)atVCC=5V
PD
OUTPUTS
■ SYMMETRICAL OUTPUTIMPEDANCE:
|I
|=IOL=8 mA (MIN)
OH
■ BALANCEDPROPAGATIONDELAYS:
t
≅ t
PLH
PHL
■
OPERATINGVOLTAGERANGE:
V
(OPR)= 4.5Vto 5.5V
CC
■ PINANDFUNCTIONCOMPATIBLEWITH
74SERIES86
■ IMPROVEDLATCH-UP IMMUNITY
■
LOWNOISE:V
= 0.8V(Max.)
OLP
DESCRIPTION
The 74VHCT86A is an advanced high-speed
CMOS QUAD EXCLUSIVE OR GATE fabricated
with sub-micron silicon gate and double-layer
74VHCT86A
QUAD EXCLUSIVE OR GATE
PRELIMINARY DATA
M
(Micro Package)
(TSSOPPackage)
ORDER CODES :
74VHCT86AM 74VHCT86AT
metalwiring C
2
MOStechnology.
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
devicecan be used to interface5V to 3V.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
T
PIN CONNECTION AND IEC LOGIC SYMBOLS
August 1999
1/8
74VHCT86A
INPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYMB OL NAME AND FU NCTION
1, 4, 9, 12 1A to 4A Data Inputs
2, 5, 10, 13 1B to 4B Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
TRUTH TABLE
ABY
LLL
LHH
HLH
HHL
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Value U n i t
V
V
V
V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximum Ratingsarethose valuesbeyondwhichdamagetothedevicemayoccur. Functionaloperationunderthese conditionisnotimplied.
=0V
1)V
CC
2)HighorLowState
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage (see note 1) -0.5 to +7.0 V
O
DC Output Voltage (see note 2) -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current ± 20 mA
DC Output Current ± 25 mA
O
DC VCCor Ground Current ± 50 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
o
C
o
C
RECOMMENDEDOPERATINGCONDITIONS
Symb o l Para met er Value Unit
V
V
V
V
T
dt/dv
1)VCC=0V
2)HighorLowState
from0.8Vto 2 V
3)V
IN
2/8
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage (see note 1) 0 to 5.5 V
O
Output Voltage (see note 2) 0 to V
O
Operating Temperature -40 to +85
op
Input Rise and Fall Time (see note 3) (V
=5.0±0.5V)
CC
CC
0 to 20 ns/V
V
o
C
74VHCT86A
DC SPECIFICATIONS
Symb o l Para met er Test C o n ditio ns Val u e Uni t
T
=25oC -40 to 85oC
A
1.35 1.5 mA
V
V
V
V
I
∆
I
OPD
V
CC
High Level Input
IH
(V)
4.5 to 5.5 2 2 V
Min. Typ. Max. Min. Max.
Voltage
Low Level Input
IL
4.5 to 5.5 0.8 0.8 V
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA
I
I
Quiescent Supply
CC
4.5 IO=-50 µA 4.4 4.5 4.4
4.5 I
=-8 mA 3.94 3.8
O
4.5 IO=50µA 0.0 0.1 0.1
4.5 I
=8 mA 0.36 0.44
O
5.5 VI=VCCorGND 2 20 µA
Current
Additional Worst Case
I
CC
Supply Current
5.5 One Input at 3.4V,
other input at V
CC
or
GND
Output Leakage
0V
= 5.5V 0.5 5.0 µA
OUT
Current
V
V
AC ELECTRICALCHARACTERISTICS
(Inputt
r=tf
=3 ns)
Symbol Parameter Test Condition Value Unit
V
(*)
t
Propagation Delay
PLH
t
Time
PHL
(*)Voltagerangeis5V± 0.5V
CC
(V)
C
(pF)
L
Min. Typ. Max. Min. Max.
5.0 15 5.0 7.9 1.0 9.0
5.0
50
=25oC -40 to 85oC
T
A
5.5 7.9 1.0 9.0
ns
CAPACITIVE CHARACTERISTICS
Symb o l Para met er Test C o n ditio ns Val u e Uni t
=25oC -40 to 85oC
T
A
Min. Typ. Max. Min. Max.
Input Capacitance 4 10 10 pF
C
IN
Power Dissipation
C
PD
Capacitance (note 1)
1)CPDisdefinedasthevalueoftheIC’sinternal equivalent capacitance whichiscalculated fromtheoperatingcurrentconsumption withoutload.(Referto
TestCircuit).Averageoperatingcurrentcanbeobtainedbythefollowingequation.I
(opr)=CPD• VCC• fIN+ICC/4(per Gate)
CC
18 pF
3/8
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