SGS Thomson Microelectronics 74VHCT541A Datasheet
74VHCT541A
OCTAL BUS BUFFER
WITH 3 STATE OUTPUTS (NON INVERTED)
■ HIGH SPEED:t
■
LOW POWERDISSIPATION:
I
=4 µA(MAX.) at TA=25oC
CC
■
COMPATIBLEWITH TTL OUTPUTS:
V
=2V(MIN),VIL=0.8V(MAX)
IH
■ POWERDOWN PROTECTIONON INPUTS&
=3.6ns (TYP.)at VCC=5V
PD
OUTPUTS
■ SYMMETRICALOUTPUTIMPEDANCE:
|I
|=IOL=8mA (MIN)
OH
■ BALANCEDPROPAGATIONDELAYS:
t
≅ t
PLH
PHL
■
OPERATINGVOLTAGERANGE:
V
(OPR)= 4.5Vto5.5V
CC
■ PINANDFUNCTIONCOMPATIBLEWITH
74SERIES541
■ IMPROVEDLATCH-UPIMMUNITY
■
LOWNOISE:V
= 0.9V(Max.)
OLP
DESCRIPTION
The VHCT541A is an advanced high speed
CMOS OCTAL BUS BUFFER (3-STATE)
fabricated with sub-micron silicon gate and
double-layermetal wiring C
2
MOS technology.
The 3 STATE control gate operates as a two
M
(Micro Package)
(TSSOPPackage)
T
ORDERCODES :
74VHCT541AM 74VHCT41AT
input AND such that if eitherG1 and G2 are high,
all eight outputs are in the high impedance state.
In order to enhancePC board layout, the AC541
offers a pinout having inputs and outputs on
opposite sidesof the package.
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
devicecan be usedto interface5Vto 3V.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
August 1999
1/8
74VHCT541A
INPUT EQUIVALENTCIRCUIT
TRUTH TABLE
G1 G2 An Yn
HXXZ
XHXZ
LLHH
LLLL
X:”H” or”L”
Z:Highimpedance
ABSOLUTE MAXIMUM RATINGS
PIN DESCRIPTION
PI N No SYMBOL NAM E AN D F U NCTION
1,19 G1,G2 Output Enable Input
2,3,4,5,
6,7,8,9
18,17,16,
15,14,13,
12, 11
10 GND Ground (0V)
20 V
INPUT OUTPUT
A1toA8 Data Inputs
Y1toY8 Data Outputs
Positive Supply Voltage
CC
Symb o l P ara met er Value U n i t
V
V
V
V
I
I
OK
I
orI
I
CC
T
T
AbsoluteMaximum Ratingsarethosevaluesbeyond whichdamagetothedevice mayoccur.Functionaloperationunder these condition isnotimplied.
1)OutputinOFFState
2)HighorLow State
Supply Voltage -0.5to+7.0 V
CC
DC Input Voltage -0.5to+7.0 V
I
DC Output Voltage (see note 1) -0.5to+7.0 V
O
DC Output Voltage (see note 2) -0.5toVCC+0.5 V
O
DC Input Diode Current -20 mA
IK
DC Output Diode Current
DC Output Current ±25 mA
O
DC VCCor Ground Current ±50 mA
GND
Storage Temperature -65to+150
stg
Lead Temperature (10 sec) 300
L
20 mA
±
o
C
o
C
RECOMMENDED OPERATING CONDITIONS
Symb o l P ara met er Value Unit
V
V
V
V
T
dt/dv
1)OutputinOFFState
2)HighorLow State
3)V
from0.8Vto 2 V
IN
2/8
Supply Voltage 4.5to5.5 V
CC
Input Voltage 0to5.5 V
I
Output Voltage (see note 1) 0to5.5 V
O
Output Voltage (see note 2) 0toV
O
Operating Temperature -40to+85
op
Input Rise and Fall Time (see note 3) (V
=5.0±0.5V)
CC
CC
0to20 ns/V
V
o
C
74VHCT541A
DC SPECIFICATIONS
Symb o l Para met er Test Con ditio ns Val u e Uni t
T
V
CC
High Level Input
V
IH
(V)
4.5to5.5 2 2 V
Min. Typ. Max. Min. Max.
Voltage
Low Level Input
V
IL
4.5to5.5 0.8 0.8 V
Voltage
High Level Output
V
OH
Voltage
Low Level Output
V
OL
Voltage
High Impedance
I
OZ
Output Leakage
4.5 IO=-50µA4.44.5 4.4
4.5 I
=-8mA 3.94 3.8
O
4.5 IO=50µA 0.0 0.1 0.1
4.5 I
4.5to5.5 VI=VIHorV
=8mA 0.36 0.44
O
IL
VO=0Vto5.5V
Current
Input Leakage Current 0to5.5 VI=5.5VorGND ±0.1 ±1.0 µA
I
I
Quiescent Supply
I
CC
5.5 VI=VCCorGND 2 20
Current
Additional Worst Case
∆I
CC
Supply Current
5.5 One Inputat3.4V,
other inputat V
CC
or
GND
I
Output Leakage
OPD
0V
=5.5V 0.5 5.0
OUT
Current
=25oC -40 to 85oC
A
±0.25 ±2.5 µA
1.35 1.5 mA
µ
µ
V
V
A
A
AC ELECTRICAL CHARACTERISTICS (Inputtr=tf=3 ns)
Symbol Parameter Test Co ndition Value Unit
t
Propagation Delay
PLH
t
Time
PHL
Output Disable Time 5.0
t
PLZ
t
PHZ
t
Output Enable Time 5.0
PZL
t
PZH
(*) Voltagerangeis 5.0V±0.5V
V
(V)
5.0
5.0
5.0
CC
C
L
(pF)
(*)
(*)
(*)
(*)
(*)
15 5.0 6.9 1.0 8.0
50 5.5 7.9 1.0 9.0
15 RL=1K
50 8.8 12.3 1.0 14.0
50 RL=1K
Min. Typ. Max. Min. Max.
Ω
Ω
=25oC -40 to 85oC
T
A
8.3 11.3 1.0 13.0
9.4 11.9 1.0 13.5
ns
ns
ns
3/8
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