SGS Thomson Microelectronics 74VHCT32A Datasheet



■ HIGHSPEED:t

■

LOW POWER DISSIPATION:
I

=2 µA (MAX.)at TA=25oC

CC

■

COMPATIBLEWITHTTLOUTPUTS:
V

=2V(MIN),VIL=0.8V(MAX)

IH

■ POWERDOWNPROTECTIONON INPUTS&

=5ns (TYP.)atVCC=5V

PD

OUTPUTS

■ SYMMETRICALOUTPUTIMPEDANCE:

|I

|=IOL=8 mA(MIN)

OH

■ BALANCEDPROPAGATIONDELAYS:

t

≅ t

PLH

PHL

■

OPERATINGVOLTAGERANGE:
V

(OPR)= 4.5Vto 5.5V

CC

■ PINANDFUNCTIONCOMPATIBLEWITH

74SERIES32

■ IMPROVEDLATCH-UPIMMUNITY

■

LOWNOISE:V

= 0.8V(Max.)

OLP

DESCRIPTION

The 74VHCT32A is an advanced high-speed
CMOS QUAD2-INPUT OR GATE fabricated with
sub-micron silicon gate and double-layer metal
wiringC

2

MOStechnology.

74VHCT32A

QUAD 2-INPUT OR GATE

PRELIMINARY DATA

M

(Micro Package)

(TSSOPPackage)

ORDERCODES :

74VHCT32AM 74VHCT32AT

The internal circuit is composed of 2 stages
including buffer output, which provide high noise
immunityand stableoutput.

Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
devicecan be used to interface 5V to 3V.

All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.

T

PIN CONNECTION AND IEC LOGICSYMBOLS

August 1999

1/7

74VHCT32A

INPUT EQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYMB OL NAME AND FUNCTIO N

1, 4, 9, 12 1A to 4A Data Inputs

2, 5, 10,13 1B to 4B Data Inputs

3, 6, 8, 11 1Y to 4Y Data Outputs

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

TRUTH TABLE

ABY

LLL

LHH
HLH
HHH

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Value U n i t

V

V
V
V

I

I

OK

I

or I

I

CC

T

T

AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamageto thedevicemayoccur.Functionaloperationunderthesecondition isnotimplied.

=0V

1)V

CC

2)HighorLowState

Supply Voltage -0.5 to +7.0 V

CC

DC Input Voltage -0.5 to +7.0 V

I

DC Output Voltage (see note 1) -0.5 to +7.0 V

O

DC Output Voltage (see note 2) -0.5 to VCC+ 0.5 V

O

DC Input Diode Current - 20 mA

IK

DC Output Diode Current ± 20 mA
DC Output Current ± 25 mA

O

DC VCCor Ground Current ± 50 mA

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 300

L

o

C

o

C

RECOMMENDED OPERATINGCONDITIONS

Symb o l Para met er Value Unit

V

V
V
V

T

dt/dv

1)VCC=0V

2)HighorLowState
from0.8Vto 2V

3)V

IN

2/7

Supply Voltage 4.5 to 5.5 V

CC

Input Voltage 0 to 5.5 V

I

Output Voltage (see note 1) 0 to 5.5 V

O

Output Voltage (see note 2) 0 to V

O

Operating Temperature -40 to +85

op

Input Rise and Fall Time (see note 3) (V

=5.0±0.5V)

CC

CC

0 to 20 ns/V

V

o

C

74VHCT32A

DC SPECIFICATIONS

Symb o l Para met er Test C on dit i o ns Val u e Uni t

T

=25oC -40 to 85oC

A

1.35 1.5 mA

V

V

V

V

I

∆

I

OPD

V

CC

High Level Input

IH

(V)

4.5 to 5.5 2 2 V

Min. Typ. Max. Min. Max.

Voltage
Low Level Input

IL

4.5 to 5.5 0.8 0.8 V

Voltage
High Level Output

OH

Voltage
Low Level Output

OL

Voltage
Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA

I

I

Quiescent Supply

CC

4.5 IO=-50 µA 4.4 4.5 4.4

4.5 I

=-8 mA 3.94 3.8

O

4.5 IO=50µA 0.0 0.1 0.1

4.5 I

=8 mA 0.36 0.44

O

5.5 VI=VCCorGND 2 20 µA

Current
Additional Worst Case

I

CC

Supply Current

5.5 One Input at 3.4V,
other input at V

CC

or

GND

Output Leakage

0V

= 5.5V 0.5 5.0 µA

OUT

Current

V

V

AC ELECTRICAL CHARACTERISTICS

(Inputt

r=tf

=3 ns)

Symbol Parameter Test Condition Value Unit

V

(*)

t

Propagation Delay

PLH

t

Time

PHL

(*)Voltagerange is5V ± 0.5V

CC

(V)

C

(pF)

L

Min. Typ. Max. Min. Max.

5.0 15 5.0 7.0 1.0 8.0

5.0

50

=25oC -40 to 85oC

T

A

5.5 8.0 1.0 9.0

ns

CAPACITIVE CHARACTERISTICS

Symb o l Para met er Test C on dit i o ns Val u e Uni t

=25oC -40 to 85oC

T

A

Min. Typ. Max. Min. Max.

Input Capacitance 4 10 10 pF

C

IN

Power Dissipation

C

PD

Capacitance (note 1)

1)CPDisdefined asthevalue oftheIC’sinternal equivalentcapacitance whichiscalculated fromtheoperating currentconsumption without load.(Referto
TestCircuit).Average operatingcurrent canbeobtainedbythefollowingequation.I

(opr)= CPD• VCC• fIN+ICC/4(perGate)

CC

12 pF

3/7

74VHCT32A

DYNAMICSWITCHING CHARACTERISTICS

Symb o l Para met er Test C on dit i o ns Val u e Uni t

T

V

CC

(V)

V
V

V

Dynamic Low Voltage

OLP

Quiet Output (note 1, 2)

OLV

Dynamic High Voltage

IHD

5.0

5.0 2.0

C

L

=50pF

Min. Typ. Max. Min. Max.

Input (note 1, 3)

V

Dynamic Low Voltage

ILD

5.0 0.8

Input (note 1, 3)

1)Worstcasepackage.

2)Maxnumberofoutputsdefined as(n).Datainputs aredriven0Vto3.0V,(n -1)outputs switching andoneoutputatGND.

3)Maxnumberofdatainputs (n)switching.(n-1) switching0Vto3.0V.Inputsundertestswitching: 3.0V tothreshold (V

TESTCIRCUIT

=25oC -40 to 85oC

A

0.3 0.8

-0.8 -0.3

),0Vtothreshold(V

ILD

),f=1MHz.

IHD

V

C

= 15/50 pF orequ ivalent (includes jigand probe capacitance)

L

R

ofpulse generator (typically50Ω)

T=ZOUT

WAVEFORM:PROPAGATIONDELAYS

4/7

(f=1MHz;50% duty cycle)

SO-14 MECHANICALDATA

74VHCT32A

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064

b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010

C 0.5 0.019

c1 45 (typ.)

D 8.55 8.75 0.336 0.344

E 5.8 6.2 0.228 0.244

e 1.27 0.050
e3 7.62 0.300

F 3.8 4.0 0.149 0.157

G 4.6 5.3 0.181 0.208

L 0.5 1.27 0.019 0.050

M 0.68 0.026

S 8 (max.)

mm inch

P013G

5/7

74VHCT32A

TSSOP14 MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.1 0.433

A1 0.05 0.10 0.15 0.002 0.004 0.006

A2 0.85 0.9 0.95 0.335 0.354 0.374

b 0.19 0.30 0.0075 0.0118

c 0.09 0.20 0.0035 0.0079

D 4.9 5 5.1 0.193 0.197 0.201

E 6.25 6.4 6.5 0.246 0.252 0.256

E1 4.3 4.4 4.48 0.169 0.173 0.176

e 0.65 BSC 0.0256 BSC

K0

o

o

4

o

8

o

0

o

4

L 0.50 0.60 0.70 0.020 0.024 0.028

o

8

A

PIN 1 IDENTIFICATION

6/7

A2

A1

b

e

c

K

L

E

D

E1

1

74VHCT32A

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in thispublication are
subject tochange without notice. Thispublication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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