SGS Thomson Microelectronics 74VHCT27A Datasheet
■ HIGHSPEED:t
■ LOW POWER DISSIPATION:
=2 µA (MAX.)at TA=25oC
I
CC
■ COMPATIBLEWITH TTL OUTPUTS:
=2V(MIN),VIL=0.8V(MAX)
V
IH
■ POWERDOWNPROTECTIONON INPUTS&
=5ns (TYP.)atVCC=5V
PD
OUTPUTS
■ SYMMETRICAL OUTPUTIMPEDANCE:
|I
|=IOL=8 mA(MIN)
OH
■ BALANCEDPROPAGATIONDELAYS:
t
≅ t
PLH
PHL
■ OPERATINGVOLTAGERANGE:
(OPR)= 4.5Vto 5.5V
V
CC
■ PINANDFUNCTIONCOMPATIBLEWITH
74SERIES 27
■ IMPROVEDLATCH-UP IMMUNITY
DESCRIPTION
The 74VHCT27A is an advanced high-speed
CMOS TRIPLE 3-INPUT NOR GATE fabricated
with sub-micron silicon gate and double-layer
metalwiring C
2
MOStechnology.
The internal circuit is composed of 3 stages
74VHCT27A
TRIPLE 3-INPUT NOR GATE
PRELIMINARY DATA
SOP TSSOP
ORDER CODES
PACKAGE TUBE T & R
SOP 74VHCT27AM 74VHCT27AMTR
TSSOP 74VHCT27ATTR
including buffer output, which provides high noise
immunityand stable output.
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
devicecan be used to interface5V to 3V.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PIN CONNECTION ANDIEC LOGICSYMBOLS
February 2000
1/7
74VHCT27A
INPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYMB OL NAME AND FUNCTIO N
1, 3, 9 1A to 3A Data Inputs
2, 4, 10 1B to 3B Data Inputs
13, 5, 11 1C to 3C Data Inputs
12, 6, 8 1Y to 3Y Data Outputs
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
TRUTH TABLE
ABCY
LLLH
HXXL
XHXL
XXHL
X:”H” or”L”
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Value U n i t
V
V
V
V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximum Ratingsarethosevaluesbeyond whichdamagetothedevicemayoccur. Functionaloperationunderthesecondition isnot implied.
1)V
=0V
CC
2)Highor LowState
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage (see note 1) -0.5 to +7.0 V
O
DC Output Voltage (see note 2) -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current
DC Output Current
O
DC VCCor Ground Current ± 50 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
20 mA
±
25 mA
±
o
C
o
C
RECOMMENDEDOPERATINGCONDITIONS
Symb o l Para met er Value Unit
V
V
V
V
T
dt/dv
1)VCC=0V
2)Highor LowState
3)V
from0.8Vto 2 V
IN
2/7
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage (see note 1) 0 to 5.5 V
O
Output Voltage (see note 2) 0 to V
O
Operating Temperature -40 to +85
op
Input Rise and Fall Time (see note 3) (V
=5.0±0.5V)
CC
CC
0 to 20 ns/V
V
o
C
74VHCT27A
DC SPECIFICATIONS
Symb o l Para met er Test C o n diti ons Val u e Uni t
T
=25oC -40 to 85oC
A
1.35 1.5 mA
V
V
V
V
I
∆
I
OPD
V
CC
High Level Input
IH
(V)
4.5 to 5.5 2 2 V
Min. Typ. Max. Min. Max.
Voltage
Low Level Input
IL
4.5 to 5.5 0.8 0.8 V
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage Current 0 to5.5 VI= 5.5V or GND ±0.1 ±1.0 µA
I
I
Quiescent Supply
CC
4.5 IO=-50 µA 4.4 4.5 4.4
4.5 I
=-8 mA 3.94 3.8
O
4.5 IO=50µA 0.0 0.1 0.1
4.5 I
=8 mA 0.36 0.44
O
5.5 VI=VCCorGND 2 20 µA
Current
Additional Worst Case
I
CC
Supply Current
5.5 One Input at 3.4V,
other input at V
CC
or
GND
Output Leakage
0V
= 5.5V 0.5 5.0 µA
OUT
Current
V
V
AC ELECTRICAL CHARACTERISTICS
(Inputt
r=tf
=3 ns)
Symbol Parameter Test Conditi on Value Unit
V
(*)
t
Propagation Delay
PLH
t
Time
PHL
(*)Voltagerangeis5V ± 0.5V
CC
(V)
C
(pF)
L
Min. Typ. Max. Min. Max.
5.0 15 5.2 7.0 1.0 8.0
5.0
50
=25oC -40 to 85oC
T
A
5.8 8.0 1.0 9.0
ns
CAPACITIVE CHARACTERISTICS
Symb o l Para met er Test C o n diti ons Val u e Uni t
=25oC -40 to 85oC
T
A
Min. Typ. Max. Min. Max.
Input Capacitance 6 10 10 pF
C
IN
Power Dissipation
C
PD
Capacitance (note 1)
1)CPDisdefinedasthevalue oftheIC’sinternalequivalentcapacitance whichiscalculatedfromtheoperating current consumption withoutload. (Referto
TestCircuit).Average operating current canbeobtainedbythefollowingequation. I
(opr)=CPD• VCC• fIN+ICC/3 (per Gate)
CC
18 pF
3/7
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