SGS Thomson Microelectronics 74VHCT20ATTR, 74VHCT20AMTR, 74VHCT20AM Datasheet

74VHCT20A

DUAL 4-INPUT NAND GATE

■ HIGH SPEED: t

■ LOW POWER DISSIPATION:

I

= 2 µA (MAX.) at TA=25°C

CC

■ COMPA TIBLE WITH TTL OUTPUTS:

V

= 2V (MIN.), V

IH

■ POWER DOWN PROTECTION ON INPUTS

= 5 ns (TYP.) at VCC = 5V

PD

= 0.8V (MAX)

IL

& OUTPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

| = IOL = 8 mA (MIN)

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

■ OPERATING VOLTAGE RANGE:

V

CC

■ PIN AND FUNCTION COMPATIBLE WITH

PHL

(OPR) = 4.5V to 5.5V

74 SERIES 20

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74VHCT20A is an advanced high-speed
CMOS DUAL 4-INPUT NAND GATE fabricated
with sub-micron silicon gate and double-layer
metal wiring C

2

MOS technology.
The internal circuit is composed of 3 stages
including buffer ou tput, which provides high noise
immunity and stable output.

TSSOPSOP

ORDER CODES

PACKAGE TUBE T & R

SOP 74VHCT20AM 74VHCT20AMTR

TSSOP 74VHCT20ATTR

Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
device can be us ed to interf ac e 5V to 3V since al l
inputs are equipped with TTL threshold.
All inputs and outputs are equipped with
protection circuits against stat ic discharge, giving
them 2KV ESD immunity and transient excess
voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/7June 2001

74VHCT20A

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 9 1A to 2A Data Inputs
2, 10 1B to 2B Data Inputs
3, 11 N.C. Not Connected
4, 12 1C to 2C Data Inputs
5, 13 1D to 2D Data Inputs

6, 8 1Y to 2Y Data Outputs

7 GND Ground (0V)

14

TRUTH TABLE

ABCDY

LXXXH
XLXXH
XXLXH
XXXLH
HHHHL

X : Don‘t Care

V

CC

Positive Supply Voltage

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V
V
V

I

I

OK

I

I

or I

CC

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied

1) V

CC

2) High or Low State

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage (see note 1)

O

DC Output Voltage (see note 2) -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCC or Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

= 0V

-0.5 to +7.0 V

-0.5 to +7.0 V

-0.5 to +7.0 V
V

- 20 mA

± 20 mA
± 25 mA
± 50 mA

-65 to +150 °C

300 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V
V
V

T

dt/dv

1) V

CC

2) High or Low State

3) V

from 0.8V to 2V

IN

Supply Voltage

CC

Input Voltage

I

Output Voltage (see note 1)

O

Output Voltage (see note 2) 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (see note 3) (V

= 0V

= 5.0 ± 0.5V)

CC

4.5 to 5.5 V
0 to 5.5 V
0 to 5.5 V

CC

-55 to 125 °C
0 to 20 ns/V

V

2/7

DC SPECIFICATIONS

Symbol Parameter

V

V

V

V

I



I

OPD

High Level Input

IH

Voltage
Low Level Input

IL

Voltage
High Level Output

OH

Voltage
Low Level Output

OL

Voltage

I

Input Leakage

I

Current
Quiescent Supply

CC

Current

I

Additional Worst

CC

Case Supply
Current

Output Leakage
Current

Test Condition Value

T

= 25°C

V

CC

(V)

4.5 to

5.5

A

Min. Typ. Max. Min. Max. Min. Max.

222V

4.5 to

5.5

4.5

4.5

4.5

4.5

0 to

5.5

5.5

IO=-50 µA

I

=-8 mA

O

IO=50 µA

=8 mA

I

O

V

= 5.5V or GND

I

= VCC or GND

V

I

4.4 4.5 4.4 4.4

3.94 3.8 3.7

0.0 0.1 0.1 0.1

One Input at 3.4V,
other input at V

5.5

CC

or GND

= 5.5V

0

V

OUT

74VHCT20A

-40 to 85°C -55 to 125°C

0.8 0.8 0.8 V

0.36 0.44 0.55

± 0.1 ± 1.0 ± 1.0 µA

22020µA

1.35 1.5 1.5 mA

0.5 5.0 5.0 µA

Unit

V

V

AC ELECTRICAL CHARACTERISTICS (Input t

= tf = 3ns)

r

Test Condition Value

= 25°C

Symbol Parameter

t

Propagation Delay

PLH
PHL

Time

t

(*) Vol tage range is 5.0V ± 0.5V

V

(*)

(V)

C

(pF)

L

CC

5.0 15 5.0 7.0 1.0 8.0 1.0 8.0

5.0 50 5.5 8.0 1.0 9.0 1.0 9.0

T

A

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

Unit

ns

CAPACITIVE CHARACTERISTICS

Test Condition Value

= 25°C

Symbol Parameter

T

A

Min. Typ. Max. Min. Max. Min. Max.

C

C

Input Capacitance

IN

Power Dissipation

PD

Capacitance

6101010pF

15 pF

(note 1)

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (R efer to Test Circuit). Average curre nt can be obtai ned by the following equa t i on. I

CC(opr)

-40 to 85°C -55 to 125°C

= CPD x VCC x fIN + ICC/2 (per gate)

Unit

3/7