SGS Thomson Microelectronics 74VHCT20A Datasheet
■ HIGHSPEED:t
■ LOW POWER DISSIPATION:
=2 µA (MAX.)at TA=25oC
I
CC
■ COMPATIBLEWITHTTLOUTPUTS:
V
=2V(MIN),VIL=0.8V(MAX)
IH
■ POWERDOWNPROTECTIONON INPUTS&
=5ns (TYP.)atVCC=5V
PD
OUTPUTS
■ SYMMETRICALOUTPUTIMPEDANCE:
|I
|=IOL=8 mA(MIN)
OH
■ BALANCEDPROPAGATIONDELAYS:
t
≅ t
PLH
PHL
■ OPERATINGVOLTAGERANGE:
(OPR)= 4.5Vto 5.5V
V
CC
■ PINANDFUNCTIONCOMPATIBLEWITH
74SERIES20
■ IMPROVEDLATCH-UPIMMUNITY
DESCRIPTION
The 74VHCT20A is an advanced high-speed
CMOS DUAL 4-INPUT NAND GATE fabricated
with sub-micron silicon gate and double-layer
metalwiring C
2
MOStechnology.
The internal circuit is composed of 3 stages
74VHCT20A
DUAL 4-INPUT NAND GATE
PRELIMINARY DATA
SOP TSSOP
ORDER CODES
PACKAGE TUBE T & R
SOP 74VHCT20AM 74VHCT20AMTR
TSSOP 74VHCT20ATTR
including buffer output, which provide high noise
immunityand stableoutput.
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
devicecan be used to interface 5V to 3V.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PIN CONNECTION AND IEC LOGICSYMBOLS
February 2000
1/7
74VHCT20A
INPUT EQUIVALENTCIRCUIT
ABSOLUTE MAXIMUM RATINGS
PIN DESCRIPTION
PI N No SYMB OL NAME AND FU NCTIO N
1, 9 1A to 2A Data Inputs
2, 10 1B to 2B Data Inputs
3, 11 N.C. Not Connected
4, 12 1C to 2C Data Inputs
5, 13 1D to 2D Data Inputs
6, 8 1Y to 2Y Data Outputs
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
TRUTH TABLE
ABCDY
LXXXH
XLXXH
XXLXH
XXXLH
HHHHL
X: ”H” or ”L”
Symb o l Para met er Value U n i t
V
V
V
V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamageto thedevicemayoccur.Functionaloperationunderthesecondition isnotimplied.
1)V
=0V
CC
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage (see note 1) -0.5 to +7.0 V
O
DC Output Voltage (see note 2) -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current ± 20 mA
DC Output Current
O
DC VCCor Ground Current ± 50 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
25 mA
±
o
C
o
C
RECOMMENDED OPERATINGCONDITIONS
Symb o l Para met er Value Unit
V
V
V
V
T
dt/dv Input Rise and Fall Time (see note 3) (V
1)VCC=0V
2)HighorLowState
3)V
from0.8Vto 2V
IN
2/7
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage (see note 1) 0 to 5.5 V
O
Output Voltage (see note 2) 0 to V
O
Operating Temperature -40 to +85
op
=5.0±0.5V) 0 to 20 ns/V
CC
CC
V
o
C
74VHCT20A
DC SPECIFICATIONS
Symb o l Para met er Test C o n dit io ns Val u e Uni t
=25oC -40 t o 85oC
T
A
Min. Typ. Max. Min. Max.
0.1
±
1.0
±
1.35 1.5 mA
µ
V
V
V
V
I
∆
I
OPD
V
CC
(V)
High Level Input
IH
4.5 to 5.5 2 2 V
Voltage
Low Level Input
IL
4.5 to 5.5 0.8 0.8 V
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage Current 0 to5.5 VI= 5.5V or GND
I
I
Quiescent Supply
CC
4.5 IO=-50 µA 4.4 4.5 4.4
4.5 I
4.5 IO=50 µ A 0.0 0.1 0.1
4.5 I
5.5 VI=VCCorGND 2 20 µA
Current
Additional Worst Case
I
CC
Supply Current
Output Leakage
5.5 One Input at 3.4V,
other input at V
0V
Current
=-8 mA 3.94 3.8
O
=8 mA 0.36 0.44
O
or
CC
GND
= 5.5V 0.5 5.0 µA
OUT
V
V
A
AC ELECTRICAL CHARACTERISTICS
(Inputt
r=tf
=3 ns)
Symbol Parameter Test Condition Value Unit
t
Propagation Delay
PLH
t
Time
PHL
(*)Voltagerange is5V ± 0.5V
V
(*)
CC
(V)
C
(pF)
L
5.0 15 5.0 7.0 1.0 8.0
5.0 50 5.5 8.0 1.0 9.0
T
=25oC -40 t o 85oC
A
Min. Typ. Max. Min. Max.
ns
CAPACITIVE CHARACTERISTICS
Symb o l Para met er Test C o n dit io ns Val u e Uni t
=25oC -40 t o 85oC
T
A
Min. Typ. Max. Min. Max.
Input Capacitance 6 10 10
C
IN
Power Dissipation
C
PD
14 pF
Capacitance (note 1)
1)CPDisdefined asthevalue oftheIC’sinternal equivalentcapacitance whichiscalculated fromtheoperating currentconsumption without load.(Referto
TestCircuit).Average operatingcurrent canbeobtainedbythefollowingequation.I
(opr)= CPD• VCC•fIN+ICC/2 (perGate)
CC
pF
3/7
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