SGS Thomson Microelectronics 74VHCT14ATTR, 74VHCT14AMTR, 74VHCT14AM Datasheet

74VHCT14A

HEX SCHMITT INVERTER

■ HIGH SPEED: t

■ LOW POWER DISSIPATION:

I

= 2 µA (MAX.) at TA=25°C

CC

■ TYPI C AL HYSTERESIS : 0.7V a t V

■ POWER DOWN PROTECTION ON INPUT S

= 5.5 ns (TYP.) at VCC = 5V

PD

= 4.5V

CC

& OUTPUTS

■ SYMMETRICAL OUTPUT IMPED ANCE:

|I

| = IOL = 8 mA (MIN)

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

■ OPERATING VOLTAGE RANGE:

V

CC

■ PIN AND FUNCTION COMPATIBLE WITH

PHL

(OPR) = 4.5V to 5.5V

74 SERIES 14

■ IMPROVED LATCH-UP IMMUNITY

■ LOW NOISE: V

= 0.8V (MAX.)

OLP

DESCRIPTION

The 74VHCT14A is an advanced high-speed
CMOS HEX SCHMITT INVERTER fabricated wi th
sub-micron silicon gate and double-layer metal
wiring C

2

MOS technology.
The internal circuit is composed of 3 stages
including buffer ou tput, which provides high no ise

immunity and stable output.
Power down protection is provided on all inputs

and outputs and 0 to 7V can be accepted on

TSSOPSOP

ORDER CODES

PACKAGE TUBE T & R

SOP 74VHCT14AM 74VHCT14AMTR

TSSOP 74VHCT14ATTR

inputs with no regard to the supply voltage. This
device can be us ed to interf ac e 5V to 3V since al l
inputs are equipped with TTL threshold.
Pin configuration and function are the same as
those of the 74VHC04 but the 74VHC14 has
hysteresis.
This together with its schmitt trigger function
allows it to be used on line receivers with slow
rise/fall input signals.
All inputs and outputs are equipped with
protection circuits against stat ic discharge, giving
them 2KV ESD immunity and transient excess
voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/8June 2001

74VHCT14A

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 3, 5, 9, 1 1,

13

2, 4, 6, 8, 10,

12

7 GND Ground (0V)

14

TRUTH TABLE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V
V
V

I

I

OK

I

I

or I

CC

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied

1) V

CC

2) High or Low State

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage (see note 1)

O

DC Output Voltage (see note 2) -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCC or Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

= 0V

1A to 6A Data Inputs

1Y to 6Y Data Outputs

V

CC

Positive Supply Voltage

AY

LH

HL

-0.5 to +7.0 V

-0.5 to +7.0 V

-0.5 to +7.0 V
V

- 20 mA

± 20 mA
± 25 mA
± 50 mA

-65 to +150 °C

300 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V
V
V

T

1) V

CC

2) High or Low State

2/8

Supply Voltage

CC

Input Voltage

I

Output Voltage (see note 1)

O

Output Voltage (see note 2) 0 to V

O

Operating Temperature

op

= 0V

4.5 to 5.5 V
0 to 5.5 V
0 to 5.5 V

CC

-55 to 125 °C

V

DC SPECIFICATIONS

Symbol Parameter

V

High Level

t+

Threshold Voltage

V

Low Level

t-

Threshold Voltage

V

Hysteresis Voltage 4.5 0.4 1.4 0.4 1.4 0.4 1.4

h

V

V

I



I

OPD

High Level Output

OH

Voltage
Low Level Output

OL

Voltage

I

Input Leakage

I

Current
Quiescent Supply

CC

Current

I

Additional Worst

CC

Case Supply
Current

Output Leakage
Current

74VHCT14A

Test Condition Value

T

= 25°C

V

CC

(V)

A

Min. Typ. Max. Min. Max. Min. Max.

4.5 2.0 2.0 2.0

5.5

2.0 2.0 2.0

4.5 0.6 0.6 0.6

5.5 0.6 0.6 0.6

5.5 0.4 1.5 0.4 1.5 0.4 1.5

4.5

4.5

4.5

4.5

0 to

5.5

5.5

IO=-50 µA

I

=-8 mA

O

IO=50 µA

=8 mA

I

O

V

= 5.5V or GND

I

= VCC or GND

V

I

4.4 4.5 4.4 4.4

3.94 3.8 3.7

0.0 0.1 0.1 0.1

One Input at 3.4V,
other input at V

5.5

CC

or GND

= 5.5V

0

V

OUT

-40 to 85°C -55 to 125°C

0.36 0.44 0.55

± 0.1 ± 1.0 ± 1.0 µA

22020µA

1.35 1.5 1.5 mA

0.5 5.0 5.0 µA

Unit

V

V

V

V

V

AC ELECTRICAL CHARACTERISTICS (Input t

= tf = 3ns)

r

Test Condition Value

= 25°C

Symbol Parameter

t

PLH

t

PHL

(*) Vol tage range is 5. 0V ± 0.5V

Propagation Delay
Time

(*)

(V)

C

(pF)

L

V

CC

5.0 15 5.5 8.6 1.0 10.0 1.0 10.0

5.0 50 6.7 9.0 1.0 11.0 1.0 11.0

T

A

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

Unit

ns

CAPACITIVE CHARACTERISTICS

Test Condition Value

= 25°C

Symbol Parameter

T

A

Min. Typ. Max. Min. Max. Min. Max.

C

C

Input Capacitance

IN

Power Dissipation

PD

Capacitance

6101010pF

16 pF

(note 1)

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

-40 to 85°C -55 to 125°C

= CPD x VCC x fIN + ICC/6 (per gate)

CC(opr)

Unit

3/8