SGS Thomson Microelectronics 74VHCT14A Datasheet

HIGHSPEED:t
LOW POWER DISSIPATION: I
=2 µA (MAX.)at TA=25oC
TYPICALHYSTERESIS:0.7Vat VCC= 4.5V
POWERDOWNPROTECTIONON INPUTS&
=4ns (TYP.)atVCC=5V
PD
OUTPUTS
SYMMETRICALOUTPUTIMPEDANCE: |I
|=IOL=8 mA(MIN)
OH
BALANCEDPROPAGATIONDELAYS:
t
t
PLH
PHL
OPERATINGVOLTAGERANGE:
(OPR)= 4.5Vto 5.5V
V
PINANDFUNCTIONCOMPATIBLEWITH
74SERIES14
IMPROVEDLATCH-UPIMMUNITY
LOWNOISE:V
= 0.8V(Max.)
OLP
DESCRIPTION
The 74VHCT14A is an advanced high-speed CMOS HEX SCHMITT INVERTER fabricated with sub-micron silicon gate and double-layer metalwiring C
2
MOStechnology.
The internal circuit is composed of 3 stages including buffer output, which enable high noise immunityand stableoutput.
74VHCT14A
HEX SCHMITT INVERTER
PRELIMINARY DATA
M
(Micro Package)
(TSSOPPackage)
ORDER CODES :
74VHCT14AM 74VHCT14AT
Power down protection is provided on all inputs and outputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This devicecan be used to interface 5V to 3V.
Pin configuration and function are the same as those of the VHC04 but the VHC14 has hysteresis.
This together with its schmitt trigger function allows it to be used on line receivers with slow rise/fallinput signals.
All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.
T
PIN CONNECTION AND IEC LOGICSYMBOLS
August 1999
1/7
74VHCT14A
INPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYMB OL NAME AND F U NCTIO N
1, 3, 5, 9,
1A to 6A Data Inputs
11, 13
2, 4, 6, 8,
1Y to 6Y Data Outputs
10, 12
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
TRUTH TABLE
AY
LH
HL
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Value U n i t
V
V V V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamageto thedevicemayoccur.Functionaloperationunderthesecondition isnotimplied.
=0V
1)V
CC
2)HighorLowState
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage (see note 1) -0.5 to +7.0 V
O
DC Output Voltage (see note 2) -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current ± 20 mA DC Output Current ± 25 mA
O
DC VCCor Ground Current ± 50 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
o
C
o
C
RECOMMENDED OPERATINGCONDITIONS
Symb o l Para met er Value Unit
V
V V V
T
1)VCC=0V
2)HighorLowState
2/7
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage (see note 1) 0 to 5.5 V
O
Output Voltage (see note 2) 0 to V
O
Operating Temperature -40 to +85
op
CC
V
o
C
74VHCT14A
DC SPECIFICATIONS
Symb o l Para met er Test Con dit io ns Val u e Uni t
T
=25oC -40 to 85oC
A
1.35 1.5 mA
µ
V
V
V
I
I
I
OPD
V
CC
(V)
High Level Threshold
t+
Voltage Low Level Threshold
V
t-
Voltage Hysteresis Voltage 4.5 0.4 1.4 0.4 1.4
V
h
4.5 2.0 2.0
5.5 2.0 2.0
4.5 0.6 0.6
5.5 0.6 0.6
Min. Typ. Max. Min. Max.
5.5 0.4 1.5 0.4 1.5
High Level Output
OH
Voltage Low Level Output
OL
Voltage Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA
I
I
Quiescent Supply
CC
4.5 IO=-50µA 4.4 4.5 4.4
4.5 I
=-8 mA 3.94 3.8
O
4.5 IO=50 µ A 0.0 0.1 0.1
4.5 I
=8 mA 0.36 0.44
O
5.5 VI=VCCorGND 2 20 µA
Current Additional Worst Case
CC
Supply Current
5.5 One Input at 3.4V, other input at V
CC
or
GND
Output Leakage
0V
= 5.5V 0.5 5.0
OUT
Current
V
V
V
V
V
A
AC ELECTRICAL CHARACTERISTICS (Input tr=tf=3 ns)
Symbol Parameter Test Condition Value Unit
t
Propagation Delay
PLH
t
Time
PHL
(*)Voltagerange is5V ± 0.5V
V
(*)
CC
(V)
C
(pF)
L
5.0 15 4.0 7.0 1.0 8.0
5.0
50
T
=25oC -40 to 85oC
A
Min. Typ. Max. Min. Max.
5.5 8.0 1.0 9.0
ns
CAPACITIVE CHARACTERISTICS
Symb o l Para met er Test Con dit io ns Val u e Uni t
=25oC -40 to 85oC
T
A
Min. Typ. Max. Min. Max.
Input Capacitance 4 10 10
C
IN
Power Dissipation
C
PD
12 pF
Capacitance (note 1)
1)CPDisdefined asthevalue oftheIC’sinternal equivalentcapacitance whichiscalculated fromtheoperating currentconsumption without load.(Referto TestCircuit).Average operatingcurrent canbeobtainedbythefollowingequation.I
(opr)= CPD• VCC• fIN+ICC/6(perGate)
CC
pF
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