■ HIGHSPEED:t
■
LOW POWER DISSIPATION:
I
=2 µA (MAX.)at TA=25oC
CC
■
TYPICALHYSTERESIS:0.7Vat VCC= 4.5V
■ POWERDOWNPROTECTIONON INPUTS&
=4ns (TYP.)atVCC=5V
PD
OUTPUTS
■
SYMMETRICALOUTPUTIMPEDANCE:
|I
|=IOL=8 mA(MIN)
OH
■ BALANCEDPROPAGATIONDELAYS:
t
≅ t
PLH
PHL
■ OPERATINGVOLTAGERANGE:
(OPR)= 4.5Vto 5.5V
V
CC
■ PINANDFUNCTIONCOMPATIBLEWITH
74SERIES14
■ IMPROVEDLATCH-UPIMMUNITY
■ LOWNOISE:V
= 0.8V(Max.)
OLP
DESCRIPTION
The 74VHCT14A is an advanced high-speed
CMOS HEX SCHMITT INVERTER fabricated
with sub-micron silicon gate and double-layer
metalwiring C
2
MOStechnology.
The internal circuit is composed of 3 stages
including buffer output, which enable high noise
immunityand stableoutput.
74VHCT14A
HEX SCHMITT INVERTER
PRELIMINARY DATA
M
(Micro Package)
(TSSOPPackage)
ORDER CODES :
74VHCT14AM 74VHCT14AT
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
devicecan be used to interface 5V to 3V.
Pin configuration and function are the same as
those of the VHC04 but the VHC14 has
hysteresis.
This together with its schmitt trigger function
allows it to be used on line receivers with slow
rise/fallinput signals.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
T
PIN CONNECTION AND IEC LOGICSYMBOLS
August 1999
1/7
74VHCT14A
INPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYMB OL NAME AND F U NCTIO N
1, 3, 5, 9,
1A to 6A Data Inputs
11, 13
2, 4, 6, 8,
1Y to 6Y Data Outputs
10, 12
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
TRUTH TABLE
AY
LH
HL
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Value U n i t
V
V
V
V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamageto thedevicemayoccur.Functionaloperationunderthesecondition isnotimplied.
=0V
1)V
CC
2)HighorLowState
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage (see note 1) -0.5 to +7.0 V
O
DC Output Voltage (see note 2) -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current ± 20 mA
DC Output Current ± 25 mA
O
DC VCCor Ground Current ± 50 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
o
C
o
C
RECOMMENDED OPERATINGCONDITIONS
Symb o l Para met er Value Unit
V
V
V
V
T
1)VCC=0V
2)HighorLowState
2/7
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage (see note 1) 0 to 5.5 V
O
Output Voltage (see note 2) 0 to V
O
Operating Temperature -40 to +85
op
CC
V
o
C
74VHCT14A
DC SPECIFICATIONS
Symb o l Para met er Test Con dit io ns Val u e Uni t
T
=25oC -40 to 85oC
A
1.35 1.5 mA
µ
V
V
V
I
∆I
I
OPD
V
CC
(V)
High Level Threshold
t+
Voltage
Low Level Threshold
V
t-
Voltage
Hysteresis Voltage 4.5 0.4 1.4 0.4 1.4
V
h
4.5 2.0 2.0
5.5 2.0 2.0
4.5 0.6 0.6
5.5 0.6 0.6
Min. Typ. Max. Min. Max.
5.5 0.4 1.5 0.4 1.5
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA
I
I
Quiescent Supply
CC
4.5 IO=-50µA 4.4 4.5 4.4
4.5 I
=-8 mA 3.94 3.8
O
4.5 IO=50 µ A 0.0 0.1 0.1
4.5 I
=8 mA 0.36 0.44
O
5.5 VI=VCCorGND 2 20 µA
Current
Additional Worst Case
CC
Supply Current
5.5 One Input at 3.4V,
other input at V
CC
or
GND
Output Leakage
0V
= 5.5V 0.5 5.0
OUT
Current
V
V
V
V
V
A
AC ELECTRICAL CHARACTERISTICS (Input tr=tf=3 ns)
Symbol Parameter Test Condition Value Unit
t
Propagation Delay
PLH
t
Time
PHL
(*)Voltagerange is5V ± 0.5V
V
(*)
CC
(V)
C
(pF)
L
5.0 15 4.0 7.0 1.0 8.0
5.0
50
T
=25oC -40 to 85oC
A
Min. Typ. Max. Min. Max.
5.5 8.0 1.0 9.0
ns
CAPACITIVE CHARACTERISTICS
Symb o l Para met er Test Con dit io ns Val u e Uni t
=25oC -40 to 85oC
T
A
Min. Typ. Max. Min. Max.
Input Capacitance 4 10 10
C
IN
Power Dissipation
C
PD
12 pF
Capacitance (note 1)
1)CPDisdefined asthevalue oftheIC’sinternal equivalentcapacitance whichiscalculated fromtheoperating currentconsumption without load.(Referto
TestCircuit).Average operatingcurrent canbeobtainedbythefollowingequation.I
(opr)= CPD• VCC• fIN+ICC/6(perGate)
CC
pF
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