SGS Thomson Microelectronics 74VHCT139A Datasheet

DUAL 2 TO 4 DECODER/DEMULTIPLEXER
HIGHSPEED:t
LOW POWER DISSIPATION:
=4 µA (MAX.) at TA=25oC
I
CC
COMPATIBLEWITHTTLOUTPUTS:
=2V(MIN),VIL=0.8V(MAX)
V
IH
POWERDOWNPROTECTIONON INPUTS&
OUTPUTS
SYMMETRICALOUTPUTIMPEDANCE:
|I
|=IOL=8 mA(MIN)
OH
BALANCEDPROPAGATIONDELAYS:
t
t
PLH
PHL
OPERATINGVOLTAGERANGE:
(OPR)= 4.5V to 5.5V
V
CC
PINANDFUNCTIONCOMPATIBLEWITH
74SERIES139
IMPROVEDLATCH-UPIMMUNITY
DESCRIPTION
The 74VHCT139A is an advanced high-speed CMOS DUAL 2 TO 4 LINE DECODER/ DEMULTIPLEXER fabricated with sub-micron silicon gate and double-layermetal wiring C technology.
The active low enable input can be used for
=7.2ns (TYP.)at VCC=5V
PD
2
MOS
74VHCT139A
PRELIMINARY DATA
SOP TSSOP
ORDER CODES
PACKAGE TUBE T & R
SOP 74VHCT139AM 74VHCT139AMTR
TSSOP 74VHCT139ATTR
gating or as a data input for demultiplexing applications. While the enable input is held high, all four outputs are high independently of the other inputs.
Power down protection is provided on all inputs and outputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This devicecan be usedto interface 5V to 3V.
All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
March 2000
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74VHCT139A
INPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYM BO L NAM E AND FUNCT I O N
1, 15 1G, 2G Enable Inputs
2, 3 1A, 1B Address Inputs
4, 5, 6, 7 1Y0 to 1Y3 Outputs
12, 11, 10,92Y0 to 2Y3 Outputs
14, 13 2A, 2B Address Inputs
8 GND Ground (0V)
16 V
CC
Positive Supply Voltage
TRUTH TABLE
INPUTS OUTPUTS
ENABLE SELECT
G B A Y0Y1Y2Y3
HXXHHHH
LLLLHHH LLHHLHH LHLHHLH
X:Don’tCare
LHHHHHL
LOGICDIAGRAM
Thislogic diagram has notbe used to estimate propagation delays
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74VHCT139A
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Value U n i t
V
V V V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamage tothedevicemayoccur. Functionaloperationunderthese condition isnotimplied.
1)V
=0
CC
2)HighorLowState
RECOMMENDEDOPERATINGCONDITIONS
Symb o l Para met er Value Unit
V
V V V
T
dt/dv
1)VCC=0
2)HighorLowState from0.8Vto 2V
3)V
IN
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage (see note 1) -0.5 to +7.0 V
O
DC Output Voltage (see note 2) -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current DC Output Current
O
DC VCCor Ground Current ± 50 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage (see note 1) 0 to 5.5 V
O
Output Voltage (see note 2) 0 to V
O
Operating Temperature -40 to +85
op
Input Rise and Fall Time (see note 3) (V
=5.0±0.5V)
CC
20 mA
±
25 mA
±
CC
0 to 20 ns/V
o
C
o
C
V
o
C
DC SPECIFICATIONS
Symb o l P ara met er Test C o n di ti o ns Val u e Uni t
T
=25oC -40 to 85oC
A
1.35 1.5 mA
µ
V
V
V
V
I
I
I
OPD
V
CC
High Level Input
IH
(V)
4.5 to 5.5 2 2 V
Min. Typ. Max. Min. Max.
Voltage Low Level Input
IL
4.5 to 5.5 0.8 0.8 V
Voltage High Level Output
OH
Voltage Low Level Output
OL
Voltage Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA
I
I
Quiescent Supply
CC
4.5 IO=-50 µA 4.4 4.5 4.4
4.5 I
=-8 mA 3.94 3.8
O
4.5 IO=50 µ A 0.0 0.1 0.1
4.5 I
=8 mA 0.36 0.44
O
5.5 VI=VCCorGND 4 40
Current Additional Worst Case
CC
Supply Current
5.5 One Input at 3.4V, other input at V
CC
or
GND
Output Leakage
0V
= 5.5V 0.5 5.0 µA
OUT
Current
V
V
A
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