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DUAL 2 TO 4 DECODER/DEMULTIPLEXER
■ HIGHSPEED:t
■ LOW POWER DISSIPATION:
=4 µA (MAX.) at TA=25oC
I
CC
■ COMPATIBLEWITHTTLOUTPUTS:
=2V(MIN),VIL=0.8V(MAX)
V
IH
■ POWERDOWNPROTECTIONON INPUTS&
OUTPUTS
■ SYMMETRICALOUTPUTIMPEDANCE:
|I
|=IOL=8 mA(MIN)
OH
■ BALANCEDPROPAGATIONDELAYS:
t
≅ t
PLH
PHL
■ OPERATINGVOLTAGERANGE:
(OPR)= 4.5V to 5.5V
V
CC
■ PINANDFUNCTIONCOMPATIBLEWITH
74SERIES139
■ IMPROVEDLATCH-UPIMMUNITY
DESCRIPTION
The 74VHCT139A is an advanced high-speed
CMOS DUAL 2 TO 4 LINE DECODER/
DEMULTIPLEXER fabricated with sub-micron
silicon gate and double-layermetal wiring C
technology.
The active low enable input can be used for
=7.2ns (TYP.)at VCC=5V
PD
2
MOS
74VHCT139A
PRELIMINARY DATA
SOP TSSOP
ORDER CODES
PACKAGE TUBE T & R
SOP 74VHCT139AM 74VHCT139AMTR
TSSOP 74VHCT139ATTR
gating or as a data input for demultiplexing
applications. While the enable input is held high,
all four outputs are high independently of the
other inputs.
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
devicecan be usedto interface 5V to 3V.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
March 2000
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74VHCT139A
INPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYM BO L NAM E AND FUNCT I O N
1, 15 1G, 2G Enable Inputs
2, 3 1A, 1B Address Inputs
4, 5, 6, 7 1Y0 to 1Y3 Outputs
12, 11, 10,92Y0 to 2Y3 Outputs
14, 13 2A, 2B Address Inputs
8 GND Ground (0V)
16 V
CC
Positive Supply Voltage
TRUTH TABLE
INPUTS OUTPUTS
ENABLE SELECT
G B A Y0Y1Y2Y3
HXXHHHH
LLLLHHH
LLHHLHH
LHLHHLH
X:Don’tCare
LHHHHHL
LOGICDIAGRAM
Thislogic diagram has notbe used to estimate propagation delays
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74VHCT139A
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Value U n i t
V
V
V
V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamage tothedevicemayoccur. Functionaloperationunderthese condition isnotimplied.
1)V
=0
CC
2)HighorLowState
RECOMMENDEDOPERATINGCONDITIONS
Symb o l Para met er Value Unit
V
V
V
V
T
dt/dv
1)VCC=0
2)HighorLowState
from0.8Vto 2V
3)V
IN
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage (see note 1) -0.5 to +7.0 V
O
DC Output Voltage (see note 2) -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current
DC Output Current
O
DC VCCor Ground Current ± 50 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage (see note 1) 0 to 5.5 V
O
Output Voltage (see note 2) 0 to V
O
Operating Temperature -40 to +85
op
Input Rise and Fall Time (see note 3) (V
=5.0±0.5V)
CC
20 mA
±
25 mA
±
CC
0 to 20 ns/V
o
C
o
C
V
o
C
DC SPECIFICATIONS
Symb o l P ara met er Test C o n di ti o ns Val u e Uni t
T
=25oC -40 to 85oC
A
1.35 1.5 mA
µ
V
V
V
V
I
∆I
I
OPD
V
CC
High Level Input
IH
(V)
4.5 to 5.5 2 2 V
Min. Typ. Max. Min. Max.
Voltage
Low Level Input
IL
4.5 to 5.5 0.8 0.8 V
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA
I
I
Quiescent Supply
CC
4.5 IO=-50 µA 4.4 4.5 4.4
4.5 I
=-8 mA 3.94 3.8
O
4.5 IO=50 µ A 0.0 0.1 0.1
4.5 I
=8 mA 0.36 0.44
O
5.5 VI=VCCorGND 4 40
Current
Additional Worst Case
CC
Supply Current
5.5 One Input at 3.4V,
other input at V
CC
or
GND
Output Leakage
0V
= 5.5V 0.5 5.0 µA
OUT
Current
V
V
A
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