SGS Thomson Microelectronics 74VHCT132A Datasheet



QUAD 2-INPUT SCHMITT NAND GATE

■ HIGHSPEED:t

■ LOW POWER DISSIPATION:

=2 µA(MAX.)atTA=25oC

I

CC

■ TYPICALHYSTERESIS:0.7VatV

■ POWERDOWNPROTECTIONON INPUTS&

OUTPUTS

■ SYMMETRICALOUTPUTIMPEDANCE:

|=IOL=8 mA(MIN)

|I

OH

■ BALANCEDPROPAGATIONDELAYS:

t

≅ t

PLH

PHL

■ OPERATINGVOLTAGERANGE:

V

(OPR)= 4.5Vto 5.5V

CC

■ PINANDFUNCTIONCOMPATIBLEWITH

74SERIES132

■ IMPROVEDLATCH-UP IMMUNITY

■ LOWNOISE:V

DESCRIPTION

The 74VHCT132A is an advanced high-speed
CMOS QUAD 2-INPUT SCHMITT NAND GATE
fabricated with sub-micron silicon gate and
double-layermetal wiring C

Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on

=6.5ns (TYP.)atVCC=5V

PD

= 4.5V

CC

= 0.8V(Max.)

OLP

2

MOS technology.

74VHCT132A

PRELIMINARY DATA

SOP TSSOP

ORDER CODES

PACKAGE TUBE T & R

SOP 74VHCT132AM 74VHCT132AMTR

TSSOP 74VHCT132ATTR

inputs with no regard to the supply voltage. This
devicecan be used to interface5V to 3V.

Pin configuration and function are the same as
those of the VHCT00A but the VHCT132A has
hysteresis.

This together with its schmitt trigger function
allows it to be used on line receivers with slow
rise/fallinput signals.

All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.

PIN CONNECTION AND IEC LOGICSYMBOLS

February 2000

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74VHCT132A

INPUT EQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYMB OL NAME AND F UNCT IO N

1, 4, 9, 12 1A to 4A Data Inputs

2, 5, 10,13 1B to 4B Data Inputs

3, 6, 8, 11 1Y to 4Y Data Outputs

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

TRUTH TABLE

ABY

LLH

LHH
HLH
HHL

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Value U n i t

V

V
V
V

I

I

OK

I

or I

I

CC

T

T

AbsoluteMaximumRatingsarethose valuesbeyond whichdamagetothedevicemayoccur. Functional operationunderthese condition isnot implied.

=0V

1)V

CC

2)Highor LowState

Supply Voltage -0.5 to +7.0 V

CC

DC Input Voltage -0.5 to +7.0 V

I

DC Output Voltage (see note 1) -0.5 to +7.0 V

O

DC Output Voltage (see note 2) -0.5 to VCC+ 0.5 V

O

DC Input Diode Current - 20 mA

IK

DC Output Diode Current ± 20 mA
DC Output Current ± 25 mA

O

DC VCCor Ground Current ± 50 mA

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 300

L

o

C

o

C

RECOMMENDED OPERATINGCONDITIONS

Symb o l Para met er Value Unit

V

V
V
V

T

1)VCC=0V

2)Highor LowState

2/7

Supply Voltage 4.5 to 5.5 V

CC

Input Voltage 0 to 5.5 V

I

Output Voltage (see note 1) 0 to 5.5 V

O

Output Voltage (see note 2) 0 to V

O

Operating Temperature -40 to +85

op

CC

V

o

C

74VHCT132A

DC SPECIFICATIONS

Symb o l Para met er Test Co n diti o ns Val u e Uni t

T

=25oC -40 to 85oC

A

1.35 1.5 mA

µ

V

V

V

I

∆I

I

OPD

V

CC

(V)

High Level Threshold

t+

Voltage
Low Level Threshold

V

t-

Voltage
Hysteresis Voltage 4.5 0.4 1.4 0.4 1.4

V

h

4.5 2.0 2.0

5.5 2.0 2.0

4.5 0.6 0.6

5.5 0.6 0.6

Min. Typ. Max. Min. Max.

5.5 0.4 1.5 0.4 1.5

High Level Output

OH

Voltage
Low Level Output

OL

Voltage
Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA

I

I

Quiescent Supply

CC

4.5 IO=-50µA 4.4 4.5 4.4

4.5 I

=-8 mA 3.94 3.8

O

4.5 IO=50 µ A 0.0 0.1 0.1

4.5 I

=8 mA 0.36 0.44

O

5.5 VI=VCCorGND 2 20 µA

Current
Additional Worst Case

CC

Supply Current

5.5 One Input at 3.4V,
other input at V

CC

or

GND

Output Leakage

0V

= 5.5V 0.5 5.0

OUT

Current

V

V

V

V

V

A

AC ELECTRICAL CHARACTERISTICS (Inputtr=tf=3 ns)

Symbol Parameter Test Conditi on Value Unit

t

Propagation Delay

PLH

t

Time

PHL

(*)Voltagerange is5V± 0.5V

V

(*)

CC

(V)

C

(pF)

L

5.0 15 6.5 8.8 1.0 10.4

5.0

50

T

=25oC -40 to 85oC

A

Min. Typ. Max. Min. Max.

7.2 9.8 1.0 11.4

ns

CAPACITIVE CHARACTERISTICS

Symb o l Para met er Test Co n diti o ns Val u e Uni t

=25oC -40 to 85oC

T

A

Min. Typ. Max. Min. Max.

Input Capacitance 6 10 10

C

IN

Power Dissipation

C

PD

18 pF

Capacitance (note 1)

1)CPDisdefinedas thevalueoftheIC’sinternal equivalent capacitance whichiscalculatedfromtheoperating current consumption without load.(Referto
TestCircuit).Averageoperatingcurrent canbeobtainedbythefollowingequation.I

(opr)=CPD• VCC• fIN+ICC/4(per Gate)

CC

pF

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