SGS Thomson Microelectronics 74VHCT125A Datasheet



QUAD BUS BUFFERS (3-STATE)

■ HIGHSPEED:t

■

LOW POWER DISSIPATION:

=4 µA (MAX.) at TA=25oC

I

CC

■

COMPATIBLEWITHTTLOUTPUTS: V

=2V(MIN),VIL=0.8V(MAX)

IH

■ POWERDOWNPROTECTIONON INPUTS&

OUTPUTS

■ SYMMETRICALOUTPUTIMPEDANCE:

|=IOL=8 mA(MIN)

|I

OH

■ BALANCEDPROPAGATIONDELAYS:

t

≅ t

PLH

PHL

■

OPERATINGVOLTAGERANGE:

(OPR)= 4.5Vto 5.5V

V

CC

■

PINANDFUNCTION COMPATIBLEWITH 74SERIES125

■ IMPROVEDLATCH-UP IMMUNITY

■

LOWNOISE:V

DESCRIPTION

The 74VHCT125A is an advanced high-speed CMOS QUAD BUS BUFFERS fabricated with sub-micron silicon gate and double-layer metal wiringC

2

MOStechnology.

=3.8ns(TYP.)atVCC=5V

PD

= 0.8V(Max.)

OLP

74VHCT125A

PRELIMINARY DATA

M

(Micro Package)

(TSSOPPackage)

ORDER CODES:

74VHCT125AM 74VHCT125AT

This device requires the 3-STATEcontrol input G to be set high to place the output into the high impedancestate.

Power down protection is provided on all inputs and outputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This devicecan be usedtointerface 5V to 3V.

All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.

T

PIN CONNECTION AND IECLOGIC SYMBOLS

August 1999

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74VHCT125A

INPUT EQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYMB OL NAME AND FU NCTION

1, 4, 10, 13 1G to 4G Output Enable Inputs

2, 5, 9, 12 1A to 4A Data Inputs

3, 6, 8, 11 1Y to 4Y Data Outputs

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

TRUTH TABLE

AGY

XHZ

LLL

HLH

X:”H” or”L”

Z: HighImpadance

ABSOLUTE MAXIMUMRATINGS

Symb o l Para met er Value U n i t

V

V V V

I

OK

I

or I

I

CC

T

AbsoluteMaximumRatingsarethosevalues beyond whichdamagetothedevicemayoccur. Functionaloperationundertheseconditionisnotimplied.

1)Output in OFFState

2)HighorLowState

Supply Voltage -0.5 to +7.0 V

CC

DC Input Voltage -0.5 to +7.0 V

I

DC Output Voltage (see note 1) -0.5 to +7.0 V

O

DC Output Voltage (see note 2) -0.5 to VCC+ 0.5 V

O

DC Input Diode Current - 20 mA

IK

DC Output Diode Current ± 20 mA DC Output Current ± 25 mA

O

DC VCCor Ground Current ± 50 mA

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 300

L

o

C

o

C

RECOMMENDEDOPERATINGCONDITIONS

Symb o l Para met er Value Unit

V

V V V

T

dt/dv

1)Output in OFFState

2)HighorLowState from0.8Vto 2 V

3)V

IN

2/8

Supply Voltage 4.5 to 5.5 V

CC

Input Voltage 0 to 5.5 V

I

Output Voltage (see note 1) 0 to 5.5 V

O

Output Voltage (see note 2) 0 to V

O

Operating Temperature -40 to +85

op

Input Rise and Fall Time (see note 3) (V

=5.0±0.5V)

CC

0 to 20 ns/V

V

o

C

74VHCT125A

DC SPECIFICATIONS

Symb o l Para met er Test C o n ditio ns Val u e Uni t

T

=25oC -40 to 85oC

A

±0.25 ±2.5 µA

1.35 1.5 mA

µ

V

I

∆I

I

OPD

V

CC

High Level Input

IH

(V)

4.5 to 5.5 2 2 V

Min. Typ. Max. Min. Max.

Voltage Low Level Input

IL

4.5 to 5.5 0.8 0.8 V

Voltage High Level Output

OH

Voltage Low Level Output

OL

Voltage High Impedance

OZ

Output Leakage

4.5 IO=-50µA 4.4 4.5 4.4

4.5 I

=-8 mA 3.94 3.8

O

4.5 IO=50µA 0.0 0.1 0.1

4.5 I

4.5 to 5.5 VI=VIHor V

=8 mA 0.36 0.44

O

IL

VO= 0V to 5.5V

Current Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA

I

Quiescent Supply

CC

5.5 VI=VCCorGND 4 40

Current Additional Worst Case

CC

Supply Current

5.5 One Input at 3.4V, other input at V

CC

or

GND

Output Leakage

0V

= 5.5V 0.5 5.0

OUT

Current

V

A

AC ELECTRICAL CHARACTERISTICS (Input tr=tf=3 ns)

Symbol Parameter Test Condition Value Unit

t

Propagation Delay

PLH

t

Time

PHL

Output Disable Time 5.0

t

PLZ

t

PHZ

t

Output Enable Time 5.0

PZL

t

PZH

(*) Voltagerangeis5.0V± 0.5V

V

(V)

5.0

CC

C

L

(pF)

(*)

15 RL=1K

(*)

50 RL=1KΩ 5.3 7.5 1.0 8.5

(*)

15 RL=1K

(*)

50 RL=1KΩ 5.1 7.1 1.0 8.0

(*)

50 RL=1K

Min. Typ. Max. Min. Max.

Ω

=25oC -40 to 85oC

T

A

3.8 5.5 1.0 6.5

3.6 5.1 1.0 6.0

6.1 8.8 1.0 10.0

ns

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