SGS Thomson Microelectronics 74VHCT08A Datasheet
74VHCT08A
QUAD 2-INPUT AND GATE
■ HIGHSPEED:t
■
LOW POWER DISSIPATION:
I
=2 µA (MAX.)at TA=25oC
CC
■
COMPATIBLEWITHTTLOUTPUTS:
V
=2V(MIN),VIL=0.8V(MAX)
IH
■ POWERDOWNPROTECTIONON INPUTS&
=4.7ns(TYP.)atVCC=5V
PD
OUTPUTS
■ SYMMETRICALOUTPUTIMPEDANCE:
|I
|=IOL=8 mA(MIN)
OH
■ BALANCEDPROPAGATIONDELAYS:
t
≅ t
PLH
PHL
■
OPERATINGVOLTAGERANGE:
V
(OPR)= 4.5Vto5.5V
CC
■ PINANDFUNCTIONCOMPATIBLEWITH
74SERIES08
■ IMPROVEDLATCH-UPIMMUNITY
■
LOWNOISE:V
= 0.8V(Max.)
OLP
DESCRIPTION
The 74VHCT08A is an advanced high-speed
CMOS QUAD 2-INPUT AND GATE fabricated
with sub-micron silicon gate and double-layer
metalwiring C
2
MOStechnology.
M
(Micro Package)
(TSSOPPackage)
T
ORDERCODES :
74VHCT08AM 74VHCT08AT
The internal circuit is composed of 2 stages
including buffer output, which provide high noise
immunityand stable output.
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
devicecan be used to interface 5V to 3V.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
August 1999
1/7
74VHCT08A
INPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYMB OL NAME AND FU NCTIO N
1, 4, 9, 12 1A to 4A Data Inputs
2, 5, 10, 13 1B to 4B Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
TRUTH TABLE
ABY
LLL
LHL
HLL
HHH
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Value U n i t
V
V
V
V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamageto thedevicemayoccur.Functionaloperation underthesecondition isnotimplied.
=0V
1)V
CC
2)HighorLowState
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage (see note 1) -0.5 to +7.0 V
O
DC Output Voltage (see note 2) -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current ± 20 mA
DC Output Current ± 25 mA
O
DC VCCor Ground Current ± 50 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
o
C
o
C
RECOMMENDED OPERATINGCONDITIONS
Symb o l Para met er Value Unit
V
V
V
V
T
dt/dv
1)VCC=0V
2)HighorLowState
from0.8Vto 2V
3)V
IN
2/7
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage (see note 1) 0 to 5.5 V
O
Output Voltage (see note 2) 0 to V
O
Operating Temperature -40 to +85
op
Input Rise and Fall Time (see note 3) (V
=5.0±0.5V)
CC
CC
0 to 20 ns/V
V
o
C
74VHCT08A
DC SPECIFICATIONS
Symb o l Para met er Test C o n dit io ns Val u e Uni t
T
=25oC -40 to 85oC
A
1.35 1.5 mA
V
V
V
V
I
∆
I
OPD
V
CC
High Level Input
IH
(V)
4.5 to 5.5 2 2 V
Min. Typ. Max. Min. Max.
Voltage
Low Level Input
IL
4.5 to 5.5 0.8 0.8 V
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA
I
I
Quiescent Supply
CC
4.5 IO=-50 µ A 4.4 4.5 4.4
4.5 I
=-8 mA 3.94 3.8
O
4.5 IO=50µA 0.0 0.1 0.1
4.5 I
=8 mA 0.36 0.44
O
5.5 VI=VCCorGND 2 20 µA
Current
Additional Worst Case
I
CC
Supply Current
5.5 One Input at 3.4V,
other input at V
CC
or
GND
Output Leakage
0V
= 5.5V 0.5 5.0 µA
OUT
Current
V
V
AC ELECTRICAL CHARACTERISTICS
(Inputt
r=tf
=3 ns)
Symbol Parameter Test Condition Value Unit
V
(*)
t
Propagation Delay
PLH
t
Time
PHL
(*)Voltagerange is5V ± 0.5V
CC
(V)
C
(pF)
L
Min. Typ. Max. Min. Max.
5.0 15 4.7 6.7 1.0 7.5
5.0
50
=25oC -40 to 85oC
T
A
5.5 7.7 1.0 8.5
ns
CAPACITIVE CHARACTERISTICS
Symb o l Para met er Test C o n dit io ns Val u e Uni t
=25oC -40 to 85oC
T
A
Min. Typ. Max. Min. Max.
Input Capacitance 4 10 10 pF
C
IN
Power Dissipation
C
PD
Capacitance (note 1)
1)CPDisdefined asthevalue oftheIC’sinternal equivalentcapacitance whichiscalculatedfromtheoperating currentconsumption without load. (Referto
TestCircuit).Average operatingcurrent canbeobtainedbythefollowingequation.I
(opr)= CPD• VCC• fIN+ICC/4(perGate)
CC
14 pF
3/7
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