SGS Thomson Microelectronics 74VHCT04AMTR, 74VHCT04AM, 74VHCT04ATTR Datasheet

1/8June 2001
HIGH SPEED: t
PD
= 4.7 ns (TYP.) at VCC = 5V
LOW POWER DISSIPATION:
CC
= 2 µA (MAX.) at TA=25°C
COMPATIBLE WITH TTL OU TPUTS:
V
IH
= 2V (M IN.), V
IL
= 0.8V (MAX)
POWER DOWN PROTECTION ON INPUTS
& OUTPUTS
SYMMETRICAL OUTPUT IMPED ANCE:
|I
OH
| = IOL = 8 mA (MIN)
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 4.5V to 5.5V
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 04
IMPROVED LATCH-UP IMMUNITY
LOW NOISE: V
OLP
= 0.8V (MAX.)
DESCRIPTION
The 74VHCT04A is an advanced high-speed CMOS HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C
2
MOS technology. The internal circuit is composed of 3 stages including buffer ou tput, which provides hig h no ise immunity and stable output.
Power down protection is provided on all inputs and outputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be us ed to interf ac e 5V to 3V since al l inputs are equipped with TTL threshold. All inputs and outputs are equipped with protection circuits against stat ic discharge, giving them 2KV ESD immunity and transient excess voltage.
74VHCT04A
HEX INVERTER
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE TUBE T & R
SOP 74VHCT04AM 74VHCT04AMTR
TSSOP 74VHCT04ATTR
TSSOPSOP
74VHCT04A
2/8
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied
1) V
CC
= 0V
2) High or Low State
RECOMMENDED OPERATING CONDITIONS
1) V
CC
= 0V
2) High or Low State
3) VIN from 0.8V to 2V
PIN No SYMBOL NAME AND FUNCTION
1, 3, 5, 9, 1 1,
13
1A to 6A Data Inputs
2, 4, 6, 8, 10,
12
1Y to 6Y Data Outputs
7 GND Ground (0V)
14
V
CC
Positive Supply Voltage
AY
LH
HL
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7.0 V
V
I
DC Input Voltage
-0.5 to +7.0 V
V
O
DC Output Voltage (see note 1)
-0.5 to +7.0 V
V
O
DC Output Voltage (see note 2) -0.5 to VCC + 0.5
V
I
IK
DC Input Diode Current
- 20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 25 mA
I
CC
or I
GND
DC VCC or Ground Current
± 50 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
300 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage
4.5 to 5.5 V
V
I
Input Voltage
0 to 5.5 V
V
O
Output Voltage (see note 1)
0 to 5.5 V
V
O
Output Voltage (see note 2) 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
dt/dv
Input Rise and Fall Time (see note 3) (V
CC
= 5.0 ± 0.5V)
0 to 20 ns/V
74VHCT04A
3/8
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (Input t
r
= tf = 3ns)
(*) Vol tage range is 5. 0V ± 0.5V
CAPACITIVE CHARACTERISTICS
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= CPD x VCC x fIN + ICC/6 (per gate)
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
IH
High Level Input Voltage
4.5 to
5.5
222V
V
IL
Low Level Input Voltage
4.5 to
5.5
0.8 0.8 0.8 V
V
OH
High Level Output Voltage
4.5
IO=-50 µA
4.4 4.5 4.4 4.4 V
4.5
I
O
=-8 mA
3.94 3.8 3.7
V
OL
Low Level Output Voltage
4.5
IO=50 µA
0.0 0.1 0.1 0.1 V
4.5
I
O
=8 mA
0.36 0.44 0.55
I
I
Input Leakage Current
0 to
5.5
V
I
= 5.5V or GND
± 0.1 ± 1.0 ± 1.0 µA
I
CC
Quiescent Supply Current
5.5
V
I
= VCC or GND
22020µA
I
CC
Additional Worst Case Supply Current
5.5
One Input at 3.4V, other input at V
CC
or GND
1.35 1.5 1.5 mA
I
OPD
Output Leakage Current
0
V
OUT
= 5.5V
0.5 5.0 5.0 µA
Symbol Parameter
Test Condition Value
Unit
V
CC
(*)
(V)
C
L
(pF)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
t
PLH
t
PHL
Propagation Delay Time
5.0 15 4.7 6.7 1.0 7.5 1.0 7.5 ns
5.0 50 5.5 7.7 1.0 8.5 1.0 8.5
Symbol Parameter
Test Condition Value
Unit
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
C
IN
Input Capacitance
4101010pF
C
PD
Power Dissipation Capacitance (note 1)
14 pF
74VHCT04A
4/8
DYNAMIC SWITCHING CHARACTERISTICS
1) Worst c ase package.
2) Max number of outp uts defined as (n). Data inputs are dri ven 0V to 3.0V, (n-1) outputs switching and one o ut put at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to 3.0V. Inputs under test switching: 3.0V to threshold (V
ILD
), 0V to threshold
(V
IHD
), f=1MHz.
TEST CIRCUIT
CL =15/50pF or equivalent (i ncludes jig and probe capacitanc e) R
T
= Z
OUT
of pulse generator (typically 50)
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
OLP
Dynamic Low Voltage Quiet Output (note 1, 2)
5.0
C
L
= 50 pF
0.3 0.8
V
V
OLV
-0.8 -0.3
V
IHD
Dynamic High Voltage Input (note 1, 3)
5.0 2.0
V
ILD
Dynamic Low Voltage Input (note 1, 3)
5.0 0.8
74VHCT04A
5/8
WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)
74VHCT04A
6/8
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. M AX.
A 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064
b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45° (typ.)
D 8.55 8.75 0.336 0.344 E 5.8 6.2 0.228 0.244
e 1.27 0.050 e3 7.62 0.300
F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.68 0.026 S8° (max.)
SO-14 MECHANICAL DATA
PO13G
74VHCT04A
7/8
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. M AX.
A 1.2 0.047
A1 0.05 0.15 0.002 0.004 0.006
A2 0.8 1 1.05 0.031 0.039 0.041
b 0.19 0.30 0.007 0.012
c 0.09 0.20 0.004 0.0089
D 4.9 5 5.1 0.193 0.197 0.201
E 6.2 6.4 6.6 0.244 0.252 0.260
E1 4.3 4.4 4.48 0.169 0.173 0.176
e 0.65 BSC 0.0256 BSC
K0° 8°0° 8°
L 0.45 0.60 0.75 0.018 0.024 0.030
TSSOP14 MECHANICAL DATA
c
E
b
A2
A
E1
D
1
PIN 1 IDENTIFICATION
A1
L
K
e
0080337D
74VHCT04A
8/8
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