SGS Thomson Microelectronics 74VHCT03AM, 74VHCT03ATTR, 74VHCT03AMTR Datasheet
74VHCT03A
QUAD 2-INPUT OPEN DRAIN NAND GATE
■ HIGH SPEED: t
■ LOW POWER DISSIPATION:
I
= 2 µA (MAX.) at TA=25°C
CC
■ COMPATIBLE WITH TTL OUTPUTS:
V
= 2V (MIN.), V
IH
■ POWER DOWN PROTECTION ON INPUTS
■ OPERATING VOLTAGE RANGE:
V
(OPR) = 4.5V to 5.5V
CC
■ PIN AND FUNCTION COMPATIBLE WITH
= 3.9 ns (TYP.) at VCC = 5V
PZ
= 0.8V (MAX)
IL
74 SERIES 03
■ IMPROVED LATCH-UP IMMUNITY
■ LOW NOISE: V
= 0.8V (MAX.)
OLP
DESCRIPTION
The 74VHCT03A is an advanced high-speed
CMOS QUAD 2-INPUT OPEN DRAIN NAND
GATE fabricated with sub-m icron sil icon gate and
double-layer metal wiring C
2
MOS technology.
The internal circuit is composed of 3 stages
including buffer ou tput, which provides high no ise
immunity and stable output.
This device can, with an external pull-up resistor,
be used in wired AND configuration. This d evice
can also be used as a led driver a nd in any other
application requiring a current sink.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
TSSOPSOP
ORDER CODES
PACKAGE TUBE T & R
SOP 74VHCT03AM 74VHCT03AMTR
TSSOP 74VHCT03ATTR
regard to the supply voltage. This device can be
used to interface 5V to 3V since all inputs are
equipped with TTL threshold.
All inputs and outputs are equipped with
protection circuits against stat ic discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/8June 2001
74VHCT03A
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 4, 9, 12 1A to 4A Data Inputs
2, 5, 10, 13 1B to 4B Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14
V
CC
TRUTH TABLE
ABY
LLZ
LHZ
HLZ
HHL
Z : High Impedance
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
I
or I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCC or Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
Positive Supply Voltage
-0.5 to +7.0 V
-0.5 to +7.0 V
V
- 20 mA
± 20 mA
± 25 mA
± 50 mA
-65 to +150 °C
300 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V
T
dt/dv
1) VIN from 0.8V to 2V
2/8
Supply Voltage
CC
Input Voltage
I
Output Voltage 0 to V
O
Operating Temperature
op
Input Rise and Fall Time (see note 3) (V
= 5.0 ± 0.5V)
CC
4.5 to 5.5 V
0 to 5.5 V
CC
-55 to 125 °C
0 to 20 ns/V
V
DC SPECIFICATIONS
Symbol Parameter
V
V
V
I
I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
Low Level Output
OL
Voltage
High Impedance
OZ
Output Leakage
Current
I
Input Leakage
I
Current
Quiescent Supply
CC
Current
I
Additional Worst
CC
Case Supply
Current
Test Condition Value
T
= 25°C
V
CC
(V)
4.5 to
5.5
A
Min. Typ. Max. Min. Max. Min. Max.
222V
4.5 to
5.5
4.5
4.5
5.5
0 to
5.5
5.5
IO=50 µA
I
=8 mA
O
= VIH or V
V
I
VO = 0V to 5.5V
V
= 5.5V or GND
I
= VCC or GND
V
I
0.0 0.1 0.1 0.1
IL
One Input at 3.4V,
other input at V
5.5
CC
or GND
74VHCT03A
-40 to 85°C -55 to 125°C
0.8 0.8 0.8 V
0.36 0.44 0.44
±0.25 ± 2.5 ± 2.5 µA
± 0.1 ± 1.0 ± 1.0 µA
22020µA
1.35 1.5 1.5 mA
Unit
V
AC ELECTRICAL CHARACTERISTICS (Input t
= tf = 3ns)
r
Test Condition Value
Symbol Parameter
t
t
(*) Vol tage rang e i s 5.0V ± 0.5V
Propagation Delay
PZL
Time
Propagation Delay
PLZ
Time
T
(*)
V
CC
(V)
C
(pF)
L
A
Min. Typ. Max. Min. Max. Min. Max.
5.0 15 3.9 5.1 1.0 6.0 1.0 6.0
5.0 50 4.4 5.7 1.0 6.6 1.0 6.6
5.0 50 7.5 9.8 1.0 11.3 1.0 11.3 ns
-40 to 85°C -55 to 125°C
Unit
ns
= 25°C
CAPACITIVE CHARACTERISTICS
Test Condition Value
= 25°C
Symbol Parameter
T
A
Min. Typ. Max. Min. Max. Min. Max.
C
C
C
Input Capacitance
IN
Output
OUT
Capacitance
Power Dissipation
PD
Capacitance
5.8 10 10 10 pF
8.8 pF
6pF
(note 1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
-40 to 85°C -55 to 125°C
= CPD x VCC x fIN + ICC/4 (per gate)
CC(opr)
Unit
3/8
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