SGS Thomson Microelectronics 74VHCT03A Datasheet
74VHCT03A
QUAD 2-INPUT OPEN DRAIN NAND GATE
■ HIGHSPEED:t
■ LOW POWER DISSIPATION:
I
=2µA (MAX.)at TA=25oC
CC
■ COMPATIBLEWITH TTLOUTPUTS:
V
=2V(MIN),VIL=0.8V(MAX)
IH
■ POWERDOWNPROTECTIONON INPUTS
■ OPERATINGVOLTAGERANGE:
V
(OPR)= 4.5Vto 5.5V
CC
■ PINANDFUNCTIONCOMPATIBLEWITH
=3.2ns(TYP.)atVCC=5V
PD
74SERIES03
■ IMPROVEDLATCH-UPIMMUNITY
■ LOWNOISE:V
= 0.8V(Max.)
OLP
DESCRIPTION
The 74VHCT03A is an advanced high-speed
CMOS QUAD 2-INPUT OPEN DRAIN NAND
GATE fabricatedwith sub-micron silicon gate and
double-layermetal wiring C
2
MOS technology.
The internal circuit is composed of 3 stages
including buffer output, which provideshigh noise
immunityand stableoutput.
This device can, with an external pull-up resistor,
M
(Micro Package)
(TSSOPPackage)
T
ORDERCODES :
74VHCT03AM 74VHCT03AT
be used in wired AND configuration. This device
can also be used as a leddriver and in anyother
applicationrequiring a currentsink.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface5V to 3V.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2kV ESD immunity and transient excess
voltage.
PIN CONNECTION AND IEC LOGICSYMBOLS
December 1999
1/7
74VHCT03A
INPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYMB OL NAME AND FU NCTIO N
1, 4, 9, 12 1A to 4A Data Inputs
2, 5, 10, 13 1B to 4B Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
TRUTH TABLE
ABY
LLZ
LHZ
HLZ
HHL
Z: High Impedance
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Val u e Uni t
V
V
V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamageto thedevicemayoccur.Functionaloperationunderthesecondition isnotimplied.
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current ± 20 mA
DC Output Current 25 mA
O
DC VCCor Ground Current ± 50 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
o
C
o
C
RECOMMENDED OPERATING CONDITIONS
Symb o l Para met er Value Un it
V
V
V
T
dt/dv
1)VINfrom0.8Vto2 V
2/7
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage 0 to V
O
Operating Temperature -40 to +85
op
Input Rise and Fall Time (see note 1) (V
=5.0±0.5V)
CC
CC
0 to20 ns/V
V
o
C
74VHCT03A
DC SPECIFICATIONS
Symb o l Para met er Test Condit i o ns Val u e Uni t
T
V
CC
High Level Input
V
IH
(V)
4.5 to 5.5 2 2 V
Min. Typ. Max. Min. Max.
Voltage
V
IL
Low Level Input
4.5 to 5.5 0.8 0.8 V
Voltage
Low Level Output
V
OL
Voltage
High Impedance
I
OZ
Output Leakage
4.5 IO=50 µA 0.0 0.1 0.1
4.5 I
5.5
=8 mA 0.36 0.44
O
VI=VIHor V
IL
VO= 0V to 5.5V
Current
Input Leakage Current 0 to5.5 VI= 5.5V or GND ±0.1 ±1.0 µA
I
I
Quiescent Supply
I
CC
5.5 VI=VCCorGND 2 20 µA
Current
∆I
Additional Worst Case
CC
Supply Current
5.5 One Input at 3.4V,
other inputat V
CC
or
GND
=25oC -40 to 85oC
A
±0.25 ±2.5 µA
1.35 1.5 mA
V
AC ELECTRICAL CHARACTERISTICS (Input tr=tf=3 ns)
Symbol Parameter Test Condition Value Unit
t
Propagation Delay
PZL
Time
Propagation Delay
t
PLZ
V
(*)
C
CC
(V)
L
(pF)
5.0 15 3.9 5.1 1.0 6.0
5.0
50
5.0 50 7.5 9.8 1.0 11.3 ns
T
=25oC -40 to 85oC
A
Min. Typ. Max. Min. Max.
4.4 5.7 1.0 6.6
ns
Time
(*)Voltagerange is5V ± 0.5V
CAPACITIVE CHARACTERISTICS
Symb o l Para met er Test Condit i o ns Val u e Uni t
=25oC -40 to 85oC
T
A
Min. Typ. Max. Min. Max.
Input Capacitance 5.8 10 10
C
IN
C
Output Capacitance 8.8
OUT
Power Dissipation
C
PD
6pF
Capacitance (note 1)
1)CPDisdefined asthevalue oftheIC’sinternal equivalentcapacitance whichis calculatedfromtheoperatingcurrentconsumption without load.(Referto
TestCircuit).Average operatingcurrent canbeobtainedbythefollowingequation.I
(opr)= CPD• VCC• fIN+ICC/4(perGate)
CC
pF
pF
3/7
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