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1/8June 2001
■ HIGH SPEED: t
PD
= 5ns (TYP.) at VCC = 5V
■ LOW POWER DISSIPATION:
I
CC
= 2 µA (MAX.) at TA=25°C
■ COMPATIBLE WITH TTL OU TP U TS:
V
IH
= 2V (M IN.), V
IL
= 0.8V (MAX)
■ POWER DOWN PROTECTION ON INPUTS
& OUTPUTS
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = IOL = 8 mA (MIN)
■ BALANCED PROPAGATION DELAYS:
t
PLH
≅ t
PHL
■ OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 4.5V to 5.5V
■ PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 02
■ IMPROVED LATCH-UP IMMUNITY
■ LOW NOISE: V
OLP
= 0.8V (MAX.)
DESCRIPTION
The 74VHCT02A is an advanced high-speed
CMOS QUAD 2-INPUT NOR GATE fabricated
with sub-micron silicon gate and double-layer
metal wiring C
2
MOS technology.
The internal circuit is composed of 3 stages
including buffer ou tput, which provides high noise
immunity and stable output.
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
device can be us ed to interf ac e 5V to 3V since al l
inputs are equipped with TTL threshold.
All inputs and outputs are equipped with
protection circuits against stat ic discharge, giving
them 2KV ESD immunity and transient excess
voltage.
74VHCT02A
QUAD 2-INPUT NOR GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE TUBE T & R
SOP 74VHCT02AM 74VHCT02AMTR
TSSOP 74VHCT02ATTR
TSSOPSOP
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74VHCT02A
2/8
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
1) V
CC
= 0V
2) High or Low State
RECOMMENDED OPERATING CONDITIONS
1) V
CC
= 0V
2) High or Low State
3) V
IN
from 0.8V to 2V
PIN No SYMBOL NAME AND FUNCTION
2, 5, 8, 11 1A to 4A Data Inputs
3, 6, 9, 12 1B to 4B Data Inputs
1, 4, 10, 13 1Y to 4Y Data Outputs
7 GND Ground (0V)
14
V
CC
Positive Supply Voltage
ABY
LLH
LHL
HLL
HHL
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7.0 V
V
I
DC Input Voltage
-0.5 to +7.0 V
V
O
DC Output Voltage (see note 1)
-0.5 to +7.0 V
V
O
DC Output Voltage (see note 2) -0.5 to VCC + 0.5
V
I
IK
DC Input Diode Current
- 20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 25 mA
I
CC
or I
GND
DC VCC or Ground Current
± 50 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
300 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage
4.5 to 5.5 V
V
I
Input Voltage
0 to 5.5 V
V
O
Output Voltage (see note 1)
0 to 5.5 V
V
O
Output Voltage (see note 2) 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
dt/dv
Input Rise and Fall Time (see note 3) (V
CC
= 5.0 ± 0.5V)
0 to 20 ns/V
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74VHCT02A
3/8
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (Input t
r
= tf = 3ns)
(*) Vol tage range is 5. 0V ± 0.5V
CAPACITIVE CHARACTERISTICS
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= CPD x VCC x fIN + ICC/4 (per gate)
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
IH
High Level Input
Voltage
4.5 to
5.5
222V
V
IL
Low Level Input
Voltage
4.5 to
5.5
0.8 0.8 0.8 V
V
OH
High Level Output
Voltage
4.5
IO=-50 µA
4.4 4.5 4.4 4.4
V
4.5
I
O
=-8 mA
3.94 3.8 3.7
V
OL
Low Level Output
Voltage
4.5
IO=50 µA
0.0 0.1 0.1 0.1
V
4.5
I
O
=8 mA
0.36 0.44 0.55
I
I
Input Leakage
Current
0 to
5.5
V
I
= 5.5V or GND
± 0.1 ± 1.0 ± 1.0 µA
I
CC
Quiescent Supply
Current
5.5
V
I
= VCC or GND
22020µA
I
CC
Additional Worst
Case Supply
Current
5.5
One Input at 3.4V,
other input at V
CC
or GND
1.35 1.5 1.5 mA
I
OPD
Output Leakage
Current
0
V
OUT
= 5.5V
0.5 5.0 5.0 µA
Symbol Parameter
Test Condition Value
Unit
V
CC
(*)
(V)
C
L
(pF)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
t
PLH
t
PHL
Propagation Delay
Time
5.0 15 5.0 7.0 1.0 8.0 1.0 8.0
ns
5.0 50 5.5 8.0 1.0 9.0 1.0 9.0
Symbol Parameter
Test Condition Value
Unit
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
C
IN
Input Capacitance
4101010pF
C
PD
Power Dissipation
Capacitance
(note 1)
17 pF