SGS Thomson Microelectronics 74VHCT00ATTR, 74VHCT00AMTR, 74VHCT00AM Datasheet

1/8June 2001
HIGH SPEED: t
PD
= 5 ns (TYP.) at VCC = 5V
LOW POWER DISSIPATION:
CC
= 2 µA (MAX.) at TA=25°C
COMPA TIBLE WITH TTL OUTPUTS:
V
IH
= 2V (MIN.), V
IL
= 0.8V (MAX)
POWER DOWN PROTECTION ON INPUTS
& OUTPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = IOL = 8 mA (MIN)
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 4.5V to 5.5V
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 00
IMPROVED LATCH-UP IMMUNITY
LOW NOISE: V
OLP
= 0.8V (MAX.)
DESCRIPTION
The 74VHCT00A is an advanced high-speed CMOS QUAD 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C
2
MOS technology. The internal circuit is composed of 3 stages including buffer ou tput, which provides high noise immunity and stable output.
Power down protection is provided on all inputs and outputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be us ed to interf ac e 5V to 3V since al l inputs are equipped with TTL threshold. All inputs and outputs are equipped with protection circuits against stat ic discharge, giving them 2KV ESD immunity and transient excess voltage.
74VHCT00A
QUAD 2-INPUT NAND GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE TUBE T & R
SOP 74VHCT00AM 74VHCT00AMTR
TSSOP 74VHCT00ATTR
TSSOPSOP
74VHCT00A
2/8
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied
1) V
CC
= 0V
2) High or Low State
RECOMMENDED OPERATING CONDITIONS
1) V
CC
= 0V
2) High or Low State
3) VIN from 0.8V to 2V
PIN No SYMBOL NAME AND FUNCTION
1, 4, 9, 12 1A to 4A Data Inputs
2, 5, 10, 13 1B to 4B Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14
V
CC
Positive Supply Voltage
ABY
LLH
LHH HLH HHL
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7.0 V
V
I
DC Input Voltage
-0.5 to +7.0 V
V
O
DC Output Voltage (see note 1)
-0.5 to +7.0 V
V
O
DC Output Voltage (see note 2) -0.5 to VCC + 0.5
V
I
IK
DC Input Diode Current
- 20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 25 mA
I
CC
or I
GND
DC VCC or Ground Current
± 50 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
300 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage
4.5 to 5.5 V
V
I
Input Voltage
0 to 5.5 V
V
O
Output Voltage (see note 1)
0 to 5.5 V
V
O
Output Voltage (see note 2) 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
dt/dv
Input Rise and Fall Time (see note 3) (V
CC
= 5.0 ± 0.5V)
0 to 20 ns/V
74VHCT00A
3/8
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (Input t
r
= tf = 3ns)
(*) Vol tage range is 5.0V ± 0.5V
CAPACITIVE CHARACTERISTICS
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= CPD x VCC x fIN + ICC/4 (per gate)
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
IH
High Level Input Voltage
4.5 to
5.5
222V
V
IL
Low Level Input Voltage
4.5 to
5.5
0.8 0.8 0.8 V
V
OH
High Level Output Voltage
4.5
IO=-50 µA
4.4 4.5 4.4 4.4 V
4.5
I
O
=-8 mA
3.94 3.8 3.7
V
OL
Low Level Output Voltage
4.5
IO=50 µA
0.0 0.1 0.1 0.1 V
4.5
I
O
=8 mA
0.36 0.44 0.55
I
I
Input Leakage Current
0 to
5.5
V
I
= 5.5V or GND
± 0.1 ± 1.0 ± 1.0 µA
I
CC
Quiescent Supply Current
5.5
V
I
= VCC or GND
22020µA
I
CC
Additional Worst Case Supply Current
5.5
One Input at 3.4V, other input at V
CC
or GND
1.35 1.5 1.5 mA
I
OPD
Output Leakage Current
0
V
OUT
= 5.5V
0.5 5.0 5.0 µA
Symbol Parameter
Test Condition Value
Unit
V
CC
(*)
(V)
C
L
(pF)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
t
PLH
t
PHL
Propagation Delay Time
5.0 15 5.0 7.0 1.0 8.0 1.0 8.0 ns
5.0 50 5.5 8.0 1.0 9.0 1.0 9.0
Symbol Parameter
Test Condition Value
Unit
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
C
IN
Input Capacitance
4101010pF
C
PD
Power Dissipation Capacitance (note 1)
10.5 pF
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