SGS Thomson Microelectronics 74VHCT00A Datasheet
■ HIGHSPEED:t
■
LOW POWER DISSIPATION:
I
=2 µA (MAX.)at TA=25oC
CC
■ COMPATIBLEWITHTTLOUTPUTS:
=2V(MIN),VIL=0.8V(MAX)
V
IH
■ POWERDOWNPROTECTIONON INPUTS&
=5ns (TYP.)atVCC=5V
PD
OUTPUTS
■ SYMMETRICALOUTPUTIMPEDANCE:
|I
|=IOL=8 mA(MIN)
OH
■
BALANCEDPROPAGATIONDELAYS:
≅ t
t
PLH
PHL
■
OPERATINGVOLTAGERANGE:
V
(OPR)= 4.5Vto 5.5V
CC
■ PINANDFUNCTIONCOMPATIBLEWITH
74SERIES00
■ IMPROVEDLATCH-UPIMMUNITY
■
LOWNOISE:V
= 0.8V(Max.)
OLP
DESCRIPTION
The 74VHCT00A is an advanced high-speed
CMOS QUAD 2-INPUT NAND GATE fabricated
with sub-micron silicon gate and double-layer
metalwiring C
2
MOStechnology.
74VHCT00A
QUAD 2-INPUT NAND GATE
PRELIMINARY DATA
M
(Micro Package)
(TSSOPPackage)
ORDERCODES :
74VHCT00AM 74VHCT00AT
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunityand stableoutput.
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
devicecan be used to interface 5V to 3V.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
T
PIN CONNECTION AND IEC LOGICSYMBOLS
August 1999
1/7
74VHCT00A
INPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYMB OL NAME AND FU NCTIO N
1, 4, 9, 12 1A to 4A Data Inputs
2, 5, 10,13 1B to 4B Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
TRUTH TABLE
ABY
LLH
LHH
HLH
HHL
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Value U n i t
V
V
V
V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamageto thedevicemayoccur.Functionaloperationunderthesecondition isnotimplied.
1)V
=0V
CC
2)HighorLowState
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage (see note 1) -0.5 to +7.0 V
O
DC Output Voltage (see note 2) -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current ± 20 mA
DC Output Current ± 25 mA
O
DC VCCor Ground Current ± 50 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
o
C
o
C
RECOMMENDED OPERATINGCONDITIONS
Symb o l Para met er Value Unit
V
V
V
V
T
dt/dv Input Rise and Fall Time (see note 3) (V
1)VCC=0V
2)HighorLowState
from0.8Vto 2V
3)V
IN
2/7
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage (see note 1) 0 to 5.5 V
O
Output Voltage (see note 2) 0 to V
O
Operating Temperature -40 to +85
op
=5.0±0.5V) 0 to 20 ns/V
CC
CC
V
o
C
74VHCT00A
DC SPECIFICATIONS
Symb o l Para met er Test C o n dit io ns Val u e Uni t
=25oC -40 to 85oC
T
A
Min. Typ. Max. Min. Max.
0.1
±
1.0
±
1.35 1.5 mA
µ
V
V
V
V
I
∆
I
OPD
V
CC
(V)
High Level Input
IH
4.5 to 5.5 2 2 V
Voltage
Low Level Input
IL
4.5 to 5.5 0.8 0.8 V
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage Current 0 to 5.5 VI= 5.5V or GND
I
I
Quiescent Supply
CC
4.5 IO=-50 µA 4.4 4.5 4.4
4.5 I
4.5 IO=50 µ A 0.0 0.1 0.1
4.5 I
5.5 VI=VCCorGND 2 20 µA
Current
Additional Worst Case
I
CC
Supply Current
Output Leakage
5.5 One Input at 3.4V,
other input at V
0V
Current
=-8 mA 3.94 3.8
O
=8 mA 0.36 0.44
O
or
CC
GND
= 5.5V 0.5 5.0 µA
OUT
V
V
A
AC ELECTRICAL CHARACTERISTICS
(Inputt
r=tf
=3 ns)
Symbol Parameter Test Condition Value Unit
t
Propagation Delay
PLH
t
Time
PHL
(*)Voltagerange is5V ± 0.5V
V
(*)
CC
(V)
C
(pF)
L
5.0 15 5.0 7.0 1.0 8.0
5.0 50 5.5 8.0 1.0 9.0
T
=25oC -40 to 85oC
A
Min. Typ. Max. Min. Max.
ns
CAPACITIVE CHARACTERISTICS
Symb o l Para met er Test C o n dit io ns Val u e Uni t
=25oC -40 to 85oC
T
A
Min. Typ. Max. Min. Max.
Input Capacitance 4 10 10
C
IN
Power Dissipation
C
PD
10.5 pF
Capacitance (note 1)
1)CPDisdefined asthevalue oftheIC’sinternal equivalentcapacitance whichiscalculated fromtheoperating currentconsumption without load.(Referto
TestCircuit).Average operatingcurrent canbeobtainedbythefollowingequation.I
(opr)= CPD• VCC•fIN+ICC/4(perGate)
CC
pF
3/7
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