SGS Thomson Microelectronics 74VHC86 Datasheet



■ HIGHSPEED:t

■

LOW POWERDISSIPATION:
I

=2 µA (MAX.) atTA=25oC

CC

■

HIGHNOISEIMMUNITY:
V

NIH=VNIL

■ POWERDOWN PROTECTIONON INPUTS

■

SYMMETRICAL OUTPUTIMPEDANCE:
|I

|=IOL=8 mA (MIN)

OH

■ BALANCEDPROPAGAT IONDELAYS:

t

≅ t

PLH

■ OPERATINGVOLTAGERANGE:

(OPR)= 2Vto 5.5V

V

CC

■ PINANDFUNCTION COMPATIBLEWITH

=28%VCC(MIN.)

PHL

=4.8ns(TYP.)atVCC=5V

PD

74SERIES86

■ IMPROVEDLATCH-UPIMMUNITY

■ LOWNOISE:V

= 0.8V(Max.)

OLP

DESCRIPTION

The 74VHC86 is an advanced high-speed CMOS
QUAD EXCLUSIVE OR GATE fabricated with
sub-micron silicon gate and double-layer metal
wiringC

2

MOStechnology.

74VHC86

QUAD EXCLUSIVE OR GATE

PRELIMINARY DATA

M

(Micro Package)

(TSSOPPackage)

ORDERCODES :

74VHC86M 74VHC86T

Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface5V to 3V.

All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.

T

PIN CONNECTION AND IEC LOGIC SYMBOLS

June 1999

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74VHC86

INPUT EQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYMB OL NAME AND FU NCTION

1, 4, 9, 12 1A to 4A Data Inputs

2, 5, 10, 13 1B to 4B Data Inputs

3, 6, 8, 11 1Y to 4Y Data Outputs

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

TRUTH TABLE

ABY

LLL

LHH
HLH
HHL

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Val u e Uni t

V

V

V

I

I

OK

I

or I

I

CC

T

T

AbsoluteMaximumRatingsarethosevaluesbeyond whichdamagetothedevicemayoccur.Functionaloperationunderthesecondition isnotimplied.

Supply Voltage -0.5 to +7.0 V

CC

DC Input Voltage -0.5 to +7.0 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V

O

DC Input Diode Current - 20 mA

IK

DC Output Diode Current ± 20 mA
DC Output Current ± 25 mA

O

DC VCCor Ground Current ± 75 mA

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 300

L

o

C

o

C

RECOMMENDEDOPERATINGCONDITIONS

Symb o l Para met er Value Un it

V

V

V

T

dt/dv

1)VINfrom30%to70%ofV

2/8

Supply Voltage 2.0 to 5.5 V

CC

Input Voltage 0 to 5.5 V

I

Output Voltage 0 to V

O

Operating Temperature -40 to +85

op

(V

CC
CC

=3.3±0.3V)
=5.0±0.5V)

Input Rise and Fall Time (see note 1) (V

CC

CC

0 to 100

0to20

V

o

C

ns/V
ns/V

74VHC86

DC SPECIFICATIONS

Symb o l Para met er Test C o n ditio ns Val u e Uni t

T

V

CC

(V)

High Level Input

V

IH

Voltage

V

Low Level Input

IL

Voltage

V

High Level Output

OH

Voltage

Low Level Output

V

OL

Voltage

Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA

I

I

Quiescent Supply

I

CC

2.0 1.5 1.5

3.0 to 5.5 0.7V

2.0 0.5 0.5

3.0 to 5.5 0.3V

2.0 IO=-50 µA 1.9 2.0 1.9

3.0 I

4.5 I

3.0 I

4.5 I

=-50µA 2.9 3.0 2.9

O

=-50µA 4.4 4.5 4.4

O

=-4 mA 2.58 2.48

O

=-8 mA 3.94 3.8

O

2.0 IO=50 µA 0.0 0.1 0.1

3.0 I

4.5 I

3.0 I

4.5 I

=50µA 0.0 0.1 0.1

O

=50µA 0.0 0.1 0.1

O

=4 mA 0.36 0.44

O

=8 mA 0.36 0.44

O

5.5 VI=VCCorGND 2 20 µA

Min. Typ. Max. Min. Max.

Current

=25oC -40 to 85oC

A

CC

0.7V

CC

CC

0.3V

CC

V

V

V

V

AC ELECTRICALCHARACTERISTICS(Inputtr=tf=3 ns)

Symbol Parameter Test Condition Value Unit

t

Propagation Delay

PLH

t

Time

PHL

(*) Voltagerangeis 3.3V± 0.3V
(**) Voltagerange is 5V± 0.5V

V

3.3

3.3

5.0

5.0

CC

(V)

(**)
(**)

C

L

(pF)

(*)
(*)

15 7.0 11.0 1.0 13.0
50 9.5 14.5 1.0 16.5

T

=25oC -40 to 85oC

A

Min. Typ. Max. Min. Max.

ns

15 4.8 6.8 1.0 8.0
50 6.3 8.8 1.0 10.0

CAPACITIVE CHARACTERISTICS

Symb o l Para met er Test C o n ditio ns Val u e Uni t

=25oC -40 to 85oC

T

A

Min. Typ. Max. Min. Max.

Input Capacitance 4 10 10

C

IN

Power Dissipation

C

PD

18 pF

Capacitance (note 1)

1)CPDisdefinedasthevalueoftheIC’sinternal equivalentcapacitance whichiscalculatedfromtheoperatingcurrent consumptionwithout load.(Referto
TestCircuit).Averageoperatingcurrent canbeobtained bythefollowingequation.I

(opr)=CPD• VCC• fIN+ICC/4(per Gate)

CC

pF

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