SGS Thomson Microelectronics 74VHC74 Datasheet

74VHC74
DUAL D-TYPE FLIP FLOP WITH PRESET AND CLEAR
HIGHSPEED:
f
=170MHz(TYP.)atVCC=5V
MAX
LOW POWERDISSIPATION:
=2 µA (MAX.) at TA=25oC
I
CC
HIGHNOISEIMMUNITY:
V
NIH=VNIL
POWERDOWN PROTECTIONON INPUTS
SYMMETRICALOUTPUTIMPEDANCE:
|I
|=IOL=8 mA (MIN)
OH
BALANCEDPROPAGATIONDELAYS:
t
t
PLH
OPERATINGVOLTAGERANGE:
(OPR)= 2Vto5.5V
V
CC
PINANDFUNCTIONCOMPATIBLEWITH
=28%VCC(MIN.)
PHL
74SERIES74
IMPROVEDLATCH-UP IMMUNITY
DESCRIPTION
The 74VHC74 is an advancedhigh-speed CMOS DUAL D-TYPE FLIP FLOP WITH PRESET AND CLEAR fabricated with sub-micron silicon gate and double-layer metal wiring C
2
MOS
technology. A signal on the D INPUT is transfered to the Q
OUTPUT during the positive going transition of the clock pulse.
(Micro Package)
CLEAR and PRESET are independent of the clock and accomplished by a low setting on the appropriateinput.
It is ideal for low power applications maintaining high speed operation similar to equivalent Bipolar SchottkyTTL.
Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface5V to 3V.
All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.
M
(TSSOPPackage)
ORDERCODES :
74VHC74M 74VHC74T
T
PIN CONNECTIONAND IEC LOGIC SYMBOLS
June 1999
1/10
74VHC74
INPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYM BO L NAM E AND F U NCTIO N
1, 13 1CLR,
2CLR
Asyncronous Reset -
Direct Input 2, 12 1D, 2D Data Input 3, 11 1CK, 2CK Clock Input
(LOW-to-HIGH, Edge-
Triggered) 4, 10 1PR, 2PR Asyncronous Set - Direct
Input
5, 9 1Q, 2Q True Flip-Flop Outputs 6, 8 1Q, 2Q Complement Flip-Flop
Outputs
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
TRUTH TABLE
INP U T S OUT P UTS FUNCTI ON
CLRPRDCKQ Q
L H X X L H CLEAR
H L X X H L PRESET
LLXXHH HHL LH HHH HL HHX Q
X:Don’tCare
n
Q
n
NO CHANGE
LOGICDIAGRAMS
Thislogic diagram has notbeused toestimate propagation delays
2/10
74VHC74
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Val u e Un i t
V
V
V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximum Ratingsarethosevaluesbeyond whichdamagetothedevicemayoccur. Functionaloperationunder these condition isnotimplied.
RECOMMENDEDOPERATINGCONDITIONS
Symb o l Para met er Value U n it
V
V V T
dt/dv
1)VINfrom30%to70%ofV
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current ± 20 mA DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
Supply Voltage 2.0 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage 0 to V
O
Operating Temperature -40 to +85
op
(V
CC CC
=3.3±0.3V) =5.0±0.5V)
Input Rise and Fall Time (see note 1) (V
CC
25 mA
±
50 mA
±
CC
0 to 100
0to20
o
C
o
C
V
o
C
ns/V ns/V
DC SPECIFICATIONS
Symb o l Parameter Test Conditio ns Val u e Uni t
=25oC - 40 t o 85oC
V
CC
(V)
High Level Input
V
IH
Voltage
V
Low Level Input
IL
Voltage
V
High Level Output
OH
Voltage
Low Level Output
V
OL
Voltage
Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA
I
I
Quiescent Supply
I
CC
2.0 1.5 1.5
3.0 to 5.5 0.7V
2.0 0.5 0.5
3.0 to 5.5 0.3V
2.0 IO=-50 µA 1.9 2.0 1.9
3.0 I
4.5 I
3.0 I
4.5 I
=-50 µA 2.9 3.0 2.9
O
=-50µA 4.4 4.5 4.4
O
=-4 mA 2.58 2.48
O
=-8 mA 3.94 3.8
O
2.0 IO=50 µA 0.0 0.1 0.1
3.0 I
4.5 I
3.0 I
4.5 I
=50 µA 0.0 0.1 0.1
O
=50µA 0.0 0.1 0.1
O
=4 mA 0.36 0.44
O
=8 mA 0.36 0.44
O
5.5 VI=VCCorGND 2 20 µA
Current
T
A
Min. Typ. Max. Min. Max.
CC
0.7V
CC
0.3V
CC
CC
V
V
V
V
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