SGS Thomson Microelectronics 74VHC574 Datasheet

WITH 3 STATE OUTPUT NON INVERTING
HIGHSPEED:
=180MHz(TYP.)atVCC=5V
f
MAX
LOWPOWERDISSIPATION:
=4 µA (MAX.) at TA=25oC
I
HIGHNOISEIMMUNITY:
V
NIH=VNIL
POWERDOWNPROTECTIONON INPUTS
SYMMETRICALOUTPUTIMPEDANCE:
|=IOL=8 mA(MIN)
|I
OH
BALANCEDPROPAGATIONDELAYS:
t
t
PLH
OPERATINGVOLTAGERANGE:
(OPR)=2Vto5.5V
V
PINANDFUNCTION COMPATIBLEWITH
74SERIES574
IMPROVEDLATCH-UP IMMUNITY
LOWNOISEV
DESCRIPTION
The 74VHC574 is an advanced high-speed CMOS OCTAL D-TYPE FLIP FLOP with 3 STATE OUTPUT NON INVERTING fabricated with sub-micron silicon gate and double-layer metalwiring C This 8 bit D-Type flip-flop is controlled by a clock input (CK) and an outputenable input (OE).
On the positive transition of the clock, the Q outputs will be set to logic states that were setup
=28%VCC(MIN.)
PHL
OLP
2
MOStechnology.
=0.9V(Max.)
74VHC574
OCTAL D-TYPE FLIP FLOP
M
(Micro Package)
(TSSOPPackage)
ORDERCODES :
74VHC574M 74VHC574T
at the D inputs. While the OE input is low, the 8 outputswill be in
a normal logic state (high or low logic level) and, while high level, the outputs will be in a high impedancestate.
The output control does not affect the internal operation of flip flop; that is, the old data can be retained or the new data can be entered even whilethe outputsare off.
Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.
All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.
T
PIN CONNECTION AND IEC LOGICSYMBOLS
June 1999
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74VHC574
INPUT EQUIVALENTCIRCUIT PIN DESCRIPTION
PI N No SYMB OL NAME AND FU NCTION
1 OE 3 State Output Enable
2, 3, 4, 5, 6, 7,
8, 9
12, 13, 14, 15, 16, 17,
18, 19
11 CLOCK Clock Input (LOW to
10 GND Ground (0V) 20 V
TRUTH TABLE
INPUTS OUTPUTS
OE CK D Q
HXXZ
L X NO CHANGE LLL LHH
X:Don’tCare Z: HighImpedance
D0 to D7 Data Inputs
Q0 to Q7 3 State Outputs
CC
Input (Active LOW)
HIGH, edge triggered)
Positive Supply Voltage
LOGICDIAGRAM
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74VHC574
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Val u e Uni t
V
V
V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximumRatingsarethosevaluesbeyond whichdamagetothedevicemayoccur. Functionaloperation underthese conditionisnot implied.
RECOMMENDEDOPERATINGCONDITIONS
Symb o l Para met er Value Un it
V
V
V
T
dt/dv
1)VINfrom30%to70%of V
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current ± 20 mA DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
Supply Voltage 2.0 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage 0 to V
O
Operating Temperature -40 to +85
op
(V
CC CC
=3.3±0.3V) =5.0±0.5V)
Input Rise and Fall Time (see note 1) (V
CC
25 mA
±
75 mA
±
CC
0 to 100
0to20
o
C
o
C
V
o
C
ns/V ns/V
DC SPECIFICATIONS
Symb o l Para met er Test C o n ditio ns Val u e Uni t
=25oC -40 to 85oC
V
CC
(V)
High Level Input
V
IH
Voltage
V
Low Level Input
IL
Voltage
V
High Level Output
OH
Voltage
2.0 1.5 1.5
3.0 to 5.5 0.7V
2.0 0.5 0.5
3.0 to 5.5 0.3V
2.0 IO=-50µA 1.9 2.0 1.9
3.0 I
4.5 I
3.0 I
4.5 I
Low Level Output
V
OL
Voltage
2.0 IO=50 µ A 0.0 0.1 0.1
3.0 I
4.5 I
3.0 I
4.5 I
High Impedance
I
OZ
Output Leakage
5.5
VO=VCCor GND
Current Input Leakage Current 0 to5.5 VI= 5.5V or GND
I
I
Quiescent Supply
I
CC
5.5 VI=VCCorGND 4 40
Current
=-50µA 2.9 3.0 2.9
O
=-50 µA 4.4 4.5 4.4
O
=-4 mA 2.58 2.48
O
=-8 mA 3.94 3.8
O
=50µA 0.0 0.1 0.1
O
=50 µA 0.0 0.1 0.1
O
=4 mA 0.36 0.44
O
=8 mA 0.36 0.44
O
VI=VIHor V
IL
T
A
Min. Typ. Max. Min. Max.
CC
0.7V
CC
0.3V
CC
±0.25 ±2.5 µA
0.1
±
1.0
±
CC
µ µ
V
V
V
V
A A
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