SGS Thomson Microelectronics 74VHC573 Datasheet

74VHC573
OCTAL D-TYPE LATCH
WITH 3 STATE OUTPUT NON INVERTING
HIGHSPEED:t
LOW POWER DISSIPATION:
=4 µA (MAX.) at TA=25oC
I
CC
HIGHNOISEIMMUNITY:
V
NIH=VNIL
POWERDOWNPROTECTIONON INPUTS
SYMMETRICALOUTPUTIMPEDANCE:
|=IOL=8 mA(MIN)
|I
OH
BALANCEDPROPAGATIONDELAYS:
t
t
PLH
OPERATINGVOLTAGERANGE:
V
(OPR)= 2Vto5.5V
CC
PINANDFUNCTION COMPATIBLEWITH
=28%VCC(MIN.)
PHL
=5.0ns(TYP.)atVCC=5V
PD
74SERIES573
IMPROVEDLATCH-UPIMMUNITY
LOWNOISE:V
= 0.9V(Max.)
OLP
DESCRIPTION
The 74VHC573 is an advanced high-speed CMOS OCTAL D-TYPE LATCH with 3 STATE OUTPUT NON INVERTING fabricated with sub-micron silicon gate and double-layer metal wiringC
2
MOStechnology.
This 8 bit D-Type latch is controlled by a latch enable input (LE) and an output enable input (OE).
While the LE input is held at a high level, the Q
M
(Micro Package)
(TSSOPPackage)
T
ORDERCODES :
74VHC573M 74VHC573T
outputswill follow thedata inputs precisely. When the LE is taken low, the Q outputs will be
latchedpreciselyat thelogic level of D input data. While the (OE) input is low, the 8 outputs will be
in a normal logic state (high or low logic level) and while high level the outputs will be in a high impedancestate.
Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.
All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.
PIN CONNECTION AND IEC LOGICSYMBOLS
June 1999
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74VHC573
INPUT EQUIVALENTCIRCUIT PIN DESCRIPTION
PI N No SYMB OL NAME AND FU NCTION
1 OE 3 State Output Enable
2, 3, 4, 5, 6, 7,
8, 9
12, 13, 14, 15, 16, 17,
18, 19
11 LE Latch Enable
10 GND Ground (0V) 20 V
TRUTH TABLE
INPUTS OUTPUTS
OE LE D Q
HXXZ
L L X NO CHANGE * LHLL LHHH
X:Don’tcare Z:Highimpedance *Qoutputsarelatched atthetime whentheLEinputistakenlowlogiclevel.
D0 to D7 Data Inputs
Q0 to Q7 3 State Latch Outputs
CC
Input (Active LOW)
Input
Positive Supply Voltage
LOGICDIAGRAM
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74VHC573
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Uni t
V
V
V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximumRatingsarethosevaluesbeyond whichdamage tothedevicemayoccur.Functionaloperationunderthese conditionisnotimplied.
RECOMMENDEDOPERATINGCONDITIONS
Symb o l Paramet er Value Un it
V
V
V
T
dt/dv
1)VINfrom30%to70%ofV
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current ± 20 mA DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
Supply Voltage 2.0 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage 0 to V
O
Operating Temperature -40 to +85
op
(V
CC CC
=3.3±0.3V) =5.0±0.5V)
Input Rise and Fall Time (see note 1) (V
CC
25 mA
±
75 mA
±
CC
0 to 100
0to20
o
C
o
C
V
o
C
ns/V ns/V
DC SPECIFICATIONS
Symb o l Para met er Test C o n diti ons Val u e Uni t
=25oC -40 to 85oC
V
CC
(V)
High Level Input
V
IH
Voltage
V
Low Level Input
IL
Voltage
V
High Level Output
OH
Voltage
2.0 1.5 1.5
3.0 to 5.5 0.7V
2.0 0.5 0.5
3.0 to 5.5 0.3V
2.0 IO=-50µA 1.9 2.0 1.9
3.0 I
4.5 I
3.0 I
4.5 I
Low Level Output
V
OL
Voltage
2.0 IO=50 µ A 0.0 0.1 0.1
3.0 I
4.5 I
3.0 I
4.5 I
High Impedance
I
OZ
Output Leakage
5.5
VO=VCCor GND
Current Input Leakage Current 0 to 5.5 VI= 5.5V or GND
I
I
Quiescent Supply
I
CC
5.5 VI=VCCorGND 4 40
Current
=-50µA 2.9 3.0 2.9
O
=-50 µA 4.4 4.5 4.4
O
=-4 mA 2.58 2.48
O
=-8 mA 3.94 3.8
O
=50µA 0.0 0.1 0.1
O
=50 µA 0.0 0.1 0.1
O
=4 mA 0.36 0.44
O
=8 mA 0.36 0.44
O
VI=VIHor V
IL
T
A
Min. Typ. Max. Min. Max.
CC
0.7V
CC
0.3V
CC
±0.25 ±2.5 µA
0.1
±
1.0
±
CC
µ µ
V
V
V
V
A A
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