OCTAL D-TYPE FLIP FLOP WITH CLEAR
■ HIGHSPEED:
f
=165MHz(TYP.)atVCC=5V
MAX
■ LOWPOWERDISSIPATION:
=4 µA (MAX.)at TA=25oC
I
CC
■ HIGHNOISEIMMUNITY:
V
NIH=VNIL
■ POWERDOWNPROTECTIONON INPUTS
■ SYMMETRICALOUTPUTIMPEDANCE:
|I
|=IOL=8 mA(MIN)
OH
■ BALANCEDPROPAGATIONDELAYS:
t
≅ t
PLH
■ OPERATINGVOLTAGERANGE:
(OPR)= 2Vto 5.5V
V
CC
■ PINANDFUNCTION COMPATIBLEWITH
74SERIES273
■ IMPROVEDLATCH-UPIMMUNITY
■ LOWNOISEV
DESCRIPTION
The 74VHC273 is an advanced high-speed
CMOS OCTAL D-TYPE FLIP FLOP WITH
CLEAR fabricated with sub-micron silicon gate
and double-layer metal wiring C
technology.
=28%VCC(MIN.)
PHL
OLP
=0.9V(Max.)
2
MOS
74VHC273
PRELIMINARY DATA
M
(Micro Package)
(TSSOPPackage)
ORDERCODES :
74VHC273M 74VHC273T
Information signals applied to D inputs are
transfered to the Q outputs on the positive going
edgeof the clock pulse.
Whenthe CLEAR input is held low, the Q outputs
are held low independentlyof the other inputs .
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
T
PIN CONNECTION AND IEC LOGIC SYMBOLS
October 1999
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74VHC273
INPUT EQUIVALENTCIRCUIT
TRUTH TABLE
INPUTS OUTPUTS FUNCTION
CLE AR D CLOCK Q
L X X L CLEAR
HL L
HH H
HX Q
X:Don’tCare
PIN DESCRIPTION
PI N No SYM BO L NAM E AND F U NCTI O N
1 CLEAR Asyncronous Master
Reset (Active LOW)
2, 5, 6, 9,
12, 15, 16,
19
3, 4, 7, 8,
13, 14, 17,
18
11 CLOCK Clock Input
10 GND Ground (0V)
20 V
n
Q0 to Q7 Flip-Flop Outputs
D0 to D7 Data Inputs
(LOW-to-HIGH, EdgeTriggered)
CC
Positive Supply Voltage
NO CHANGE
LOGICDIAGRAMS
Thislogic diagram has not be used to esimate propagation delays
2/10
74VHC273
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Val u e Uni t
V
V
V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximumRatingsarethosevaluesbeyond whichdamage tothedevicemayoccur.Functionaloperation underthese conditionisnotimplied.
RECOMMENDED OPERATINGCONDITIONS
Symb o l Para met er Value Un it
V
V
V
T
dt/dv
1)VINfrom30%to70%ofV
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current ± 20 mA
DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
Supply Voltage 2.0 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage 0 to V
O
Operating Temperature -40 to +85
op
(V
CC
CC
=3.3±0.3V)
=5.0±0.5V)
Input Rise and Fall Time (see note 1) (V
CC
25 mA
±
75 mA
±
CC
0 to 100
0to20
o
C
o
C
V
o
C
ns/V
ns/V
DC SPECIFICATIONS
Symb o l Para met er Test Con di ti o ns Val u e Uni t
=25oC -40 to 85oC
V
CC
(V)
High Level Input
V
IH
Voltage
V
Low Level Input
IL
Voltage
V
High Level Output
OH
Voltage
Low Level Output
V
OL
Voltage
Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA
I
I
Quiescent Supply
I
CC
2.0 1.5 1.5
3.0 to 5.5 0.7V
2.0 0.5 0.5
3.0 to 5.5 0.3V
2.0 IO=-50 µA 1.9 2.0 1.9
3.0 I
4.5 I
3.0 I
4.5 I
=-50 µA 2.9 3.0 2.9
O
=-50µA 4.4 4.5 4.4
O
=-4 mA 2.58 2.48
O
=-8 mA 3.94 3.8
O
2.0 IO=50 µA 0.0 0.1 0.1
3.0 I
4.5 I
3.0 I
4.5 I
=50 µA 0.0 0.1 0.1
O
=50µA 0.0 0.1 0.1
O
=4 mA 0.36 0.44
O
=8 mA 0.36 0.44
O
5.5 VI=VCCorGND 4 40 µA
Current
T
A
Min. Typ. Max. Min. Max.
CC
0.7V
CC
0.3V
CC
CC
V
V
V
V
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