SGS Thomson Microelectronics 74VHC244 Datasheet
74VHC244
OCTAL BUS BUFFER
WITH 3 STATE OUTPUTS (NON INVERTED)
■ HIGH SPEED:t
■ LOW POWERDISSIPATION:
=4 µA(MAX.)atTA=25oC
I
CC
■ HIGHNOISEIMMUNITY:
V
NIH=VNIL
■ POWERDOWNPROTECTIONON INPUTS
■ SYMMETRICALOUTPUTIMPEDANCE:
|=IOL=8mA (MIN)
|I
OH
■ BALANCEDPROPAGATIONDELAYS:
t
≅ t
PLH
■ OPERATINGVOLTAGERANGE:
V
(OPR)= 2Vto5.5V
CC
■ PINANDFUNCTION COMPATIBLEWITH
=28%VCC(MIN.)
PHL
=3.9ns(TYP.)atVCC=5V
PD
74SERIES244
■ IMPROVEDLATCH-UP IMMUNITY
■ LOWNOISEV
=0.9V(Max.)
OLP
DESCRIPTION
The 74VHC244 is an advanced high speed
CMOS OCTAL BUS BUFFER (3-STATE)
fabricated with sub-micron silicon gate and
double-layermetal wiring C
2
MOS technology.
G output enable governsfour BUS BUFFERs.
M
(Micro Package)
(TSSOPPackage)
T
ORDERCODES :
74VHC244M 74VHC244T
This device is designed to be used with 3 state
memoryaddress drivers, etc.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
June 1999
1/8
74VHC244
INPUT EQUIVALENTCIRCUIT
TRUTH TABLE
GAnYn
LLL
LHH
HXZ
X:”H” or”L”
Z:Highimpedance
PIN DESCRIPTION
PI N No SYM BO L NAM E AND F UNCTI O N
1 1G Output Enable Input
2,4,6,8 1A1to1A4 Data Inputs
9,7,5,3 2Y1to2Y4 Data Outputs
11,13,15,17 2A1to2A4 Data Inputs
18,16,14,12 1Y1to1Y4 Data Outputs
19 2G Output Enable Input
10 GND Ground (0V)
20 V
INPUT OUTPU T
Positive Supply Voltage
CC
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Val u e Uni t
V
V
V
I
I
OK
I
orI
I
CC
T
T
AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamage tothedevicemayoccur.Functionaloperationunderthese conditionisnotimplied.
Supply Voltage -0.5to+7.0 V
CC
DC Input Voltage -0.5to+7.0 V
I
DC Output Voltage -0.5toVCC+0.5 V
O
DC Input Diode Current -20 mA
IK
DC Output Diode Current ±20 mA
DC Output Current ±25 mA
O
DC VCCor Ground Current ±75 mA
GND
Storage Temperature -65to+150
stg
Lead Temperature (10 sec) 300
L
o
C
o
C
RECOMMENDED OPERATINGCONDITIONS
Symb o l Para met er Value Un it
V
V
V
T
dt/dv
1)VINfrom30%to70%of V
Supply Voltage 2.0to5.5 V
CC
Input Voltage 0to5.5 V
I
Output Voltage 0toV
O
Operating Temperature -40to+85
op
(V
CC
CC
=3.3±0.3V)
=5.0±0.5V)
Input Rise and Fall Time (see note 1) (V
CC
CC
0to100
0to20
V
o
C
ns/V
ns/V
2/8
74VHC244
DC SPECIFICATIONS
Symb o l Parameter Test Con diti ons Val u e Unit
T
V
CC
(V)
High Level Input
V
IH
Voltage
V
Low Level Input
IL
Voltage
V
High Level Output
OH
Voltage
2.0 1.5 1.5
3.0to5.5 0.7V
2.0 0.5 0.5
3.0to5.5 0.3V
2.0 IO=-50µA1.92.0 1.9
3.0 I
4.5 I
3.0 I
4.5 I
Low Level Output
V
OL
Voltage
2.0 IO=50µA 0.0 0.1 0.1
3.0 I
4.5 I
3.0 I
4.5 I
High Impedance
I
OZ
Output Leakage
5.5
Current
Input Leakage Current 0 to5.5 VI=5.5VorGND
I
I
Quiescent Supply
I
CC
5.5 VI=VCCorGND 4 40
Current
Min. Typ. Max. Min. Max.
=-50µA2.93.0 2.9
O
=-50µA4.44.5 4.4
O
=-4mA 2.58 2.48
O
=-8mA 3.94 3.8
O
=50µA 0.0 0.1 0.1
O
=50µA 0.0 0.1 0.1
O
=4mA 0.36 0.44
O
=8mA 0.36 0.44
O
VI=VIHorV
IL
VO=VCCorGND
=25oC -40 to 85oC
A
±
±
0.7V
CC
0.25
0.1
CC
CC
0.3V
±
±
2.5
1.0
CC
µ
µ
µ
V
V
V
V
A
A
A
AC ELECTRICAL CHARACTERISTICS (Input tr=tf=3 ns)
Symbol Parameter Test Conditi on Value Unit
t
Propagation Delay
PLH
t
Time
PHL
Output Enable Time 3.3
t
PZL
t
PZH
t
Output Disable Time 3.3
PLZ
t
PHZ
t
t
(*) Voltagerangeis3.3V± 0.3V
(**) Voltagerange is 5V±0.5V
Note1:Parameterguaranteed bydesign. t
Output to Output Skew
OSLH
Time (note 1)
OSHL
soLH
V
(V)
3.3
3.3
5.0
5.0
3.3
5.0
5.0
5.0
3.3
5.0
=|t
pLHm-tpLHn
CC
C
L
(pF)
(*)
(*)
(**)
(**)
(*)
(*)
(**)
(**)
(*)
(**)
(*)
(**)
15 5.8 8.4 1.0 10.0
50 8.3 11.9 1.0 13.5
15 3.9 5.5 1.0 6.5
50 5.4 7.5 1.0 8.5
15 RL=1KΩ 6.6 10.6 1.0 12.5
50 RL=1K
15 RL=1KΩ 4.7 7.3 1.0 8.5
50 RL=1K
50 RL=1KΩ 10.3 14.0 1.0 16.0
50 RL=1K
50 1.5 1.5 ns
50
|,t
soHL
=|t
pHLm-tpHLn
|
Min. Typ. Max. Min. Max.
Ω
Ω
Ω
=25oC -40 to 85oC
T
A
9.1 14.1 1.0 16.0
6.2 9.3 1.0 10.5
6.7 9.2 1.0 10.5
1.0 1.0
ns
ns
ns
3/8
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