SGS Thomson Microelectronics 74VHC240 Datasheet

74VHC240
OCTAL BUS BUFFER
WITH 3 STATE OUTPUTS (INVERTED)
HIGHSPEED:t
LOW POWERDISSIPATION:
=4 µA (MAX.) at TA=25oC
I
CC
HIGHNOISEIMMUNITY:
V
NIH=VNIL
POWERDOWNPROTECTIONON INPUTS
SYMMETRICALOUTPUTIMPEDANCE:
|=IOL=8 mA (MIN)
|I
OH
BALANCEDPROPAGATIONDELAYS:
t
t
PLH
OPERATINGVOLTAGERANGE:
V
(OPR)= 2Vto 5.5V
CC
PINANDFUNCTIONCOMPATIBLEWITH
=28%VCC(MIN.)
PHL
=3.6ns(TYP.)atVCC=5V
PD
74SERIES240
IMPROVEDLATCH-UP IMMUNITY
LOWNOISE:V
= 0.9V(Max.)
OLP
DESCRIPTION
The 74VHC240 is an advanced high-speed CMOS OCTAL BUS BUFFER (3-STATE) fabricated with sub-micron silicon gate and double-layermetal wiring C
2
MOS technology.
G output enable governsfour BUS BUFFERs.
M
(Micro Package)
(TSSOPPackage)
T
ORDERCODES :
74VHC240M 74VHC240T
This device is designed to be used with 3 state memoryaddressdrivers, etc. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface5V to 3V.
All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.
PIN CONNECTIONAND IEC LOGIC SYMBOLS
June 1999
1/8
74VHC240
INPUT EQUIVALENTCIRCUIT
TRUTH TABLE
GAnYn
LLH LHL
HXZ
X:”H” or”L” Z:Highimpedance
PIN DESCRIPTION
PI N No SYM BO L NAM E AND F UNCT I ON
1 1G Output Enable Input 2,4,6,8 1A1to1A4 Data Inputs 9,7,5,3 2Y1to2Y4 Data Outputs
11,13,15,17 2A1to2A4 Data Inputs 18,16,14,12 1Y1to1Y4 Data Outputs
19 2G Output Enable Input 10 GND Ground (0V) 20 V
INPUT OUTPU T
Positive Supply Voltage
CC
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Val u e Uni t
V
V
V
I
I
OK
I
orI
I
CC
T
T
AbsoluteMaximum Ratingsarethosevalues beyond whichdamagetothedevicemayoccur. Functionaloperationunder these condition isnotimplied.
Supply Voltage -0.5to+7.0 V
CC
DC Input Voltage -0.5to+7.0 V
I
DC Output Voltage -0.5toVCC+0.5 V
O
DC Input Diode Current -20 mA
IK
DC Output Diode Current ±20 mA DC Output Current ±25 mA
O
DC VCCor Ground Current ±75 mA
GND
Storage Temperature -65to+150
stg
Lead Temperature (10 sec) 300
L
o
C
o
C
RECOMMENDEDOPERATINGCONDITIONS
Symb o l Para met er Value Un it
V
V
V
T
dt/dv
1)VINfrom30%to70%of V
Supply Voltage 2.0to5.5 V
CC
Input Voltage 0to5.5 V
I
Output Voltage 0toV
O
Operating Temperature -40to+85
op
(V
CC CC
=3.3±0.3V) =5.0±0.5V)
Input Rise and Fall Time (see note 1) (V
CC
CC
0to100
0to20
V
o
C
ns/V ns/V
2/8
74VHC240
DC SPECIFICATIONS
Symb o l Para met er Test Con diti o ns Val u e Unit
T
V
CC
(V)
High Level Input
V
IH
Voltage
V
Low Level Input
IL
Voltage
V
High Level Output
OH
Voltage
2.0 1.5 1.5
3.0to 5.5 0.7V
2.0 0.5 0.5
3.0to 5.5 0.3V
2.0 IO=-50µA1.92.0 1.9
3.0 I
4.5 I
3.0 I
4.5 I
Low Level Output
V
OL
Voltage
2.0 IO=50µA 0.0 0.1 0.1
3.0 I
4.5 I
3.0 I
4.5 I
High Impedance
I
OZ
Output Leakage
5.5
Current Input Leakage Current 0to5.5 VI=5.5Vor GND
I
I
Quiescent Supply
I
CC
5.5 VI=VCCorGND 4 40
Current
Min. Typ. Max. Min. Max.
=-50µA2.93.0 2.9
O
=-50µA4.44.5 4.4
O
=-4mA 2.58 2.48
O
=-8mA 3.94 3.8
O
=50µA 0.0 0.1 0.1
O
=50µA 0.0 0.1 0.1
O
=4mA 0.36 0.44
O
=8mA 0.36 0.44
O
VI=VIHorV
IL
VO=VCCorGND
=25oC -40 to 85oC
A
±
±
0.7V
CC
0.25
0.1
CC
CC
0.3V
±
±
2.5
1.0
CC
µ
µ µ
V
V
V
V
A
A A
AC ELECTRICALCHARACTERISTICS (Inputtr=tf=3 ns)
Symbol Parameter Test Conditi on Value Unit
t
Propagation Delay
PLH
t
Time
PHL
Output Enable Time 3.3
t
PZL
t
PZH
t
Output Disable Time 3.3
PLZ
t
PHZ
t t
(*) Voltage rangeis3.3V ±0.3V (**) Voltagerangeis 5V±0.5V Note1:Parameterguaranteedbydesign. t
Output to Output Skew
OSLH
Time (note 1)
OSHL
soLH
V
(V)
3.3
3.3
5.0
5.0
3.3
5.0
5.0
5.0
3.3
5.0
=|t
pLHm-tpLHn
CC
C
L
(pF)
(*)
(*) (**) (**)
(*)
(*) (**) (**)
(*) (**)
(*) (**)
15 5.3 7.5 1.0 9.0 50 7.8 11.0 1.0 12.5 15 3.6 5.5 1.0 6.5 50 5.1 7.5 1.0 8.5 15 RL=1K 6.6 10.6 1.0 12.5 50 RL=1K 15 RL=1K 4.7 7.3 1.0 8.5 50 RL=1K 50 RL=1K 10.3 14.0 1.0 16.0 50 RL=1K 50 1.5 1.5 ns 50
|,t
soHL
=|t
pHLm-tpHLn
|
Min. Typ. Max. Min. Max.
=25oC -40 to 85oC
T
A
9.1 14.1 1.0 16.0
6.2 9.3 1.0 10.5
6.7 9.2 1.0 10.5
1.0 1.0
ns
ns
ns
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