The 74VHC240 is an advanced high-speed
CMOSOCTALBUSBUFFER(3-STATE)
fabricated with sub-micron silicon gate and
double-layermetal wiring C
2
MOS technology.
G output enable governsfour BUS BUFFERs.
M
(Micro Package)
(TSSOPPackage)
T
ORDERCODES :
74VHC240M74VHC240T
This device is designed to be used with 3 state
memoryaddressdrivers, etc.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface5V to 3V.
All inputs andoutputs areequipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PIN CONNECTIONAND IEC LOGIC SYMBOLS
June 1999
1/8
74VHC240
INPUT EQUIVALENTCIRCUIT
TRUTH TABLE
GAnYn
LLH
LHL
HXZ
X:”H” or”L”
Z:Highimpedance
PIN DESCRIPTION
PI N NoSYM BO LNAM E AND F UNCT I ON
11GOutput Enable Input
2,4,6,81A1to1A4 Data Inputs
9,7,5,32Y1to2Y4 Data Outputs
11,13,15,17 2A1to2A4 Data Inputs
18,16,14,12 1Y1to1Y4 Data Outputs
192GOutput Enable Input
10GNDGround (0V)
20V
INPUTOUTPU T
Positive Supply Voltage
CC
ABSOLUTE MAXIMUM RATINGS
Symb o lPara met erVal u eUni t
V
V
V
I
I
OK
I
orI
I
CC
T
T
AbsoluteMaximum Ratingsarethosevalues beyond whichdamagetothedevicemayoccur. Functionaloperationunder these condition isnotimplied.
Supply Voltage-0.5to+7.0V
CC
DC Input Voltage-0.5to+7.0V
I
DC Output Voltage-0.5toVCC+0.5V
O
DC Input Diode Current-20mA
IK
DC Output Diode Current±20mA
DC Output Current±25mA
O
DC VCCor Ground Current±75mA
GND
Storage Temperature-65to+150
stg
Lead Temperature (10 sec)300
L
o
C
o
C
RECOMMENDEDOPERATINGCONDITIONS
Symb o lPara met erValueUn it
V
V
V
T
dt/dv
1)VINfrom30%to70%of V
Supply Voltage2.0to5.5V
CC
Input Voltage0to5.5V
I
Output Voltage0toV
O
Operating Temperature-40to+85
op
(V
CC
CC
=3.3±0.3V)
=5.0±0.5V)
Input Rise and Fall Time (see note 1) (V
CC
CC
0to100
0to20
V
o
C
ns/V
ns/V
2/8
74VHC240
DC SPECIFICATIONS
Symb o lPara met erTest Con diti o nsVal u eUnit
T
V
CC
(V)
High Level Input
V
IH
Voltage
V
Low Level Input
IL
Voltage
V
High Level Output
OH
Voltage
2.01.51.5
3.0to 5.50.7V
2.00.50.5
3.0to 5.50.3V
2.0IO=-50µA1.92.01.9
3.0I
4.5I
3.0I
4.5I
Low Level Output
V
OL
Voltage
2.0IO=50µA0.00.10.1
3.0I
4.5I
3.0I
4.5I
High Impedance
I
OZ
Output Leakage
5.5
Current
Input Leakage Current0to5.5VI=5.5Vor GND
I
I
Quiescent Supply
I
CC
5.5VI=VCCorGND440
Current
Min.Typ.Max.Min.Max.
=-50µA2.93.02.9
O
=-50µA4.44.54.4
O
=-4mA2.582.48
O
=-8mA3.943.8
O
=50µA0.00.10.1
O
=50µA0.00.10.1
O
=4mA0.360.44
O
=8mA0.360.44
O
VI=VIHorV
IL
VO=VCCorGND
=25oC-40 to 85oC
A
±
±
0.7V
CC
0.25
0.1
CC
CC
0.3V
±
±
2.5
1.0
CC
µ
µ
µ
V
V
V
V
A
A
A
AC ELECTRICALCHARACTERISTICS (Inputtr=tf=3 ns)
SymbolParameterTest Conditi onValueUnit
t
Propagation Delay
PLH
t
Time
PHL
Output Enable Time3.3
t
PZL
t
PZH
t
Output Disable Time3.3
PLZ
t
PHZ
t
t
(*) Voltage rangeis3.3V ±0.3V
(**) Voltagerangeis 5V±0.5V
Note1:Parameterguaranteedbydesign. t
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