SGS Thomson Microelectronics 74VHC174 Datasheet



HEX D-TYPE FLIP FLOP WITH CLEAR

■ HIGHSPEED:

f

=175MHz(TYP.)at VCC=5V

MAX

■ LOW POWER DISSIPATION:

=4 µA (MAX.)at TA=25oC

I

CC

■ HIGHNOISEIMMUNITY:

V

NIH=VNIL

■ POWERDOWNPROTECTIONON INPUTS

■ SYMMETRICALOUTPUTIMPEDANCE:

|I

|=IOL=8 mA(MIN)

OH

■ BALANCEDPROPAGATIONDELAYS:

t

≅ t

PLH

■ OPERATINGVOLTAGERANGE:

(OPR)= 2Vto 5.5V

V

CC

■ PINANDFUNCTIONCOMPATIBLEWITH

74SERIES174

■ IMPROVEDLATCH-UP IMMUNITY

■ LOWNOISE:V

DESCRIPTION

The 74VHC174 is an advanced high-speed
CMOS HEX D-TYPE FLIP FLOP WITH CLEAR
fabricated with sub-micron silicon gate and
double-layermetal wiring C

Information signals applied to D inputs are

=28%VCC(MIN.)

PHL

OLP

= 0.8V(Max.)

2

MOS technology.

74VHC174

PRELIMINARY DATA

M

(Micro Package)

(TSSOPPackage)

ORDERCODES :

74VHC174M 74VHC174T

transfered to the Q outputs on the positive going
edgeof theclock pulse.

Whenthe CLEAR input is held low, the Q outputs
are held low independentlyof the other inputs.

Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.

All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.

T

PIN CONNECTION AND IEC LOGICSYMBOLS

June 1999

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74VHC174

INPUT EQUIVALENTCIRCUIT

TRUTH TABLE

INPUTS OUTPUTS FUNCTION

CLE AR D CLOCK Q

L X X L CLEAR
HL L
HH H
HX Q

X:Don’tCare

PIN DESCRIPTION

PI N No SYM BO L NAM E AND F U NCTION

1 CLEAR Asyncronous MasterReset

(ActiveLOW)

2, 5, 7,10,

12, 15

3, 4, 6,11,

13, 14

9 CLOCK ClockInput(LOW-to-HIGH,

8 GND Ground(0V)

16 V

n

Q0 to Q5 Flip-Flop Outputs

D0 to D5 DataInputs

Edge-Triggered)

CC

PositiveSupply Voltage

NO CHANGE

LOGICDIAGRAM

Thislogic diagram has not be used to estimate propagation delays

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74VHC174

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Val u e Uni t

V

V

V

I

I

OK

I

or I

I

CC

T

T

AbsoluteMaximumRatingsarethosevaluesbeyond whichdamage tothedevicemayoccur. Functionaloperation undertheseconditionisnotimplied.

RECOMMENDED OPERATINGCONDITIONS

Symb o l Para met er Value Un it

V

V

V

T

dt/dv

1)VINfrom30%to70%of V

SupplyVoltage -0.5 to +7.0 V

CC

DC InputVoltage -0.5 to +7.0 V

I

DC OutputVoltage -0.5 to VCC+ 0.5 V

O

DC InputDiode Current - 20 mA

IK

DC OutputDiode Current ± 20 mA
DC OutputCurrent

O

DC VCCorGround Current

GND

Storage Temperature -65 to +150

stg

LeadTemperature (10 sec) 300

L

SupplyVoltage 2.0 to 5.5 V

CC

InputVoltage 0 to 5.5 V

I

OutputVoltage 0 to V

O

OperatingTemperature -40 to +85

op

(V

CC

CC

=3.3 ± 0.3V)

=5.0±0.5V)

InputRise and FallTime(seenote 1) (V

CC

25 mA

±

50 mA

±

CC

0 to 100

0to20

o

C

o

C

V

o

C

ns/V
ns/V

DC SPECIFICATIONS

Symb o l Para met er Test Con diti ons Val u e Unit

=25oC -40 to 85oC

V

CC

(V)

HighLevelInputVoltage 2.0 1.5 1.5

V

IH

3.0 to 5.5 0.7V

V

LowLevel InputVoltage 2.0 0.5 0.5

IL

3.0 to 5.5 0.3V

V

HighLevelOutput

OH

Voltage

LowLevel Output

V

OL

Voltage

InputLeakage Current 0 to 5.5 VI= 5.5V or GND

I

I

Quiescent Supply

I

CC

2.0 IO=-50µA 1.9 2.0 1.9

3.0 I

4.5 I

3.0 I

4.5 I

=-50 µA 2.9 3.0 2.9

O

=-50 µA 4.4 4.5 4.4

O

=-4 mA 2.58 2.48

O

=-8 mA 3.94 3.8

O

2.0 IO=50µA 0.0 0.1 0.1

3.0 I

4.5 I

3.0 I

4.5 I

=50µA 0.0 0.1 0.1

O

=50 µA 0.0 0.1 0.1

O

=4 mA 0.36 0.44

O

=8 mA 0.36 0.44

O

5.5 VI=VCCorGND 4 40

Current

T

A

Min. Typ . Max. Min. Max.

CC

0.7V

CC

CC

0.1

±

0.3V

±

1.0

CC

µ
µ

V

V

V

V

A
A

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