SGS Thomson Microelectronics 74VHC16373TTR Datasheet

WITH 3-STATE OUTPUTS NON INVERTING

■ HIGH SPEED:

t

= 5.0 ns (TYP.) at VCC=5V

PD

■ LOW POWER DISSIPATION:

I

=4µA (MAX.) at TA=25°C

CC

■ HIGH NOISE IMMUNITY:

V

NIH=VNIL

■ POWER DOWN PROTECTION ON INPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

|=IOL=8mA(MIN)

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

■ OPERATING VOLTAGE RANGE:

V

(OPR) = 2V to 5.5V

CC

■ PIN AND FUNCTION COMPATIBLE WITH

74 SERIES 16373

■ IMPROVED LATCH-UP IMMUNITY

■ LOW NOISE: V

= 28% VCC(MIN.)

PHL

OLP

= 0.9V (MAX.)

74VHC16373

16-BIT D-TYPE L ATCH

TSSOP

ORDER CODES

PACKAGE TUBE T & R

TSSOP 74VHC16373TTR

PIN CO NNECTION

DESCRIPTION

The 74VHC16373 is an advanced high-speed
CMOS 16 BIT D-TYPE LATCH with 3 STATE
OUTPUTS NON INVERTING fabricated with
sub-micron s ilicon gate and double-layer metal
wiring C

2

MOS technology.
These 16 bit D-TYPE latches are byte controlled
by two latch enable inputs (nLE) and two out put
enable inputs(nOE

).
While the nLE input is held at a high level, the nQ
outputs will follow the data (D) inputs.
When the nLE is taken LOW, the nQ outputs w ill
be latched at the logic level of D data inputs.
When the (nOE

) input is low, the nQ outputs wil l
be in a normal lo gic s tate (high or low logic level);
when nOE

is at high level ,the outputs will be in a
high impedance state.
Power down protection is provided on all inputs
and 0 to 7V can be ac c epted on inputs with no
regard to the supply vo ltage. This device can be
usedto interface 5V to 3V.
All inputs and outputs are equipped with protec­tion circuits against static discharge, giving them
2KV ESD immunity and transient excess vo ltage.

1/11February 2003

74VHC16373

INPUT EQUIVALENT CIRCUIT

PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1 1OE

2, 3,5,6,8, 9,

11, 12

13,14,16, 17,

19, 20, 22, 23

24 2OE

25 2LE Latch Enable Input

36,35,33, 32,

30, 29, 27, 26

47,46,44, 43,

41, 40, 38, 37

48 1LE Latch Enable Input

4, 10, 15, 21,
28, 34, 39, 45

7, 18, 31, 42 V

1Q0 to 1Q7 3-State Outputs

2Q0 to 2Q7 3-State Outputs

2D0 to 2D7 Data Inputs

1D0 to 1D7 Data Inputs

GND Ground (0V)

CC

3 State Output Enable
Input (Active LOW)

3 State Output Enable
Input (Active LOW)

Positive Supply Voltage

TRUTH TABLE

INPUTS OUTPUT

OE

HXX Z

L L X NO CHANGE *
LHL L
LHH H

X : Don‘t Care
Z : High Impedance
* : Q outputs arelatched atthe time whenthe LEinput istaken low
logiclevel.

LE D Q

IEC LOGIC SYMBOLS

2/11

74VHC16373

LOGIC DIAGRAM

This logic diagram has not to be used to estimate propagation delays

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CC

V

V

I

IK

I

OK

I

or I

I

CC

T

stg

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied

Supply Voltage
DC Input Voltage

I

DC Output Voltage -0.5 to VCC+ 0.5

O

DC Input Diode Current
DC Output Diode Current
DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature
Lead Temperature (10 sec)

L

-0.5 to +7.0 V

-0.5 to +7.0 V
V

-20 mA

± 20 mA
± 25 mA
± 75 mA

-65 to +150 °C

300 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

CC

V

V

T

dt/dv

1) VINfrom30% to 70%of V

Supply Voltage
Input Voltage

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (note 1) (V

CC

CC

(V

= 5.0 ± 0.5V)

CC

=3.3±0.3V)

2 to 5.5 V
0 to 5.5 V

CC

-55 to 125 °C
0 to 100

0to20

V

ns/V

3/11

74VHC16373

DC SPECIFICATIONS

Symbol Parameter

V

V

V

I

High Level Input

IH

Voltage

V

Low Level Input

IL

Voltage

High Level Output

OH

Voltage

Low Level Output

OL

Voltage

High Impedance

I

OZ

Output Leakage
Current

Input Leakage

I

I

Current
Quiescent Supply

CC

Current

Test Condition Value

V

(V)

CC

T

A

Min. Typ. Max. Min. Max. Min. Max.

-40 to 85°C -55 to 125°C

= 25°C

2.0 1.5 1.5 1.5

3.0to

5.5

0.7V

CC

0.7V

CC

0.7V

CC

2.0 0.5 0.5 0.5

3.0to

5.5

2.0

3.0

4.5

3.0

4.5

2.0

3.0

4.5

3.0

4.5

5.5

0to

5.5

5.5

IO=-50 µA

=-50 µA

I

O

=-50 µA

I

O

=-4 mA

I

O

=-8 mA

I

O

IO=50 µA

=50 µA

I

O

=50 µA

I

O

=4 mA

I

O

=8 mA

I

O

I=VIH

or V

IL

V

VO=VCCor GND

VI= 5.5V or GND

V

I=VCC

or GND

1.9 2.0 1.9 1.9

2.9 3.0 2.9 2.9

4.4 4.5 4.4 4.4

2.58 2.48 2.4

3.94 3.8 3.7

0.3V

CC

0.3V

CC

0.3V

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.36 0.44 0.55

0.36 0.44 0.55

±0.25 ± 2.5 ± 5 µA

± 0.1 ± 1 ± 1 µA

44040µA

CC

Unit

V

V

V

V

4/11