QUAD 2 CHANNEL MULTIPLEXER
■ HIGHSPEED:t
■ LOW POWER DISSIPATION:
=4 µA(MAX.)atTA=25oC
I
CC
■ HIGHNOISEIMMUNITY:
V
NIH=VNIL
■ POWERDOWNPROTECTIONON INPUTS
■ SYMMETRICALOUTPUTIMPEDANCE:
|=IOL=8 mA(MIN)
|I
OH
■ BALANCEDPROPAGATIONDELAYS:
t
≅ t
PLH
■ OPERATINGVOLTAGERANGE:
V
(OPR)= 2V to5.5V
CC
■ PINANDFUNCTIONCOMPATIBLEWITH
=28%VCC(MIN.)
PHL
74SERIES157
■ IMPROVEDLATCH-UP IMMUNITY
■ LOWNOISE:V
DESCRIPTION
The 74VHC157 is an high-speed CMOS QUAD
2-CHANNEL MULTIPLEXER fabricated with
sub-micron silicon gate and double-layer metal
wiringC
2
MOStechnology.
It consists of four 2-input digital multiplexers with
common select and strobe inputs. It is a
=4.1ns (TYP.)atVCC=5V
PD
= 0.8V(Max.)
OLP
74VHC157
PRELIMINARY DATA
M1
(Micro Package)
(TSSOPPackage)
ORDERCODES :
74VHC157M 74VHC157T
non-inverting multiplexer. When the STROBE
input is held high, selection of data is inhibited
and all the outputs become low. The SELECT
decoding determines whether the A or B inputs
get routed to their corresponding Youtputs.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.All inputs and outputs
are equippedwith protectioncircuitsagainst static
discharge, giving them 2KV ESD immunity and
transientexcessvoltage.
T
PIN CONNECTION AND IEC LOGICSYMBOLS
June 1999
1/9
74VHC157
INPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYM BO L NAM E AND FUNCT I O N
1 SELECT Common Data Select Input
2,5,11,14 1Ato4A Data Inputs From
Source A
3,6,10,13 1Bto4B Data Inputs From
Source B
4,7,9,12 1Yto4Y Multiplexer Outputs
15 STROBE Strobe Input
8 GND Ground (0V)
16 V
Positive Supply Voltage
CC
TRUTH TABLE
INPUT OUTPUT
STROBE SELECT A B Y
HXXXL
LLLXL
LLHXH
LHXLL
LHXHH
X:”H” or”L”
LOGICDIAGRAM
2/9
74VHC157
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Val u e Uni t
V
V
V
I
I
OK
I
orI
I
CC
T
T
AbsoluteMaximumRatingsarethosevaluesbeyond whichdamagetothedevicemayoccur. Functional operationundertheseconditionisnotimplied.
RECOMMENDED OPERATINGCONDITIONS
Symb o l Para met er Value Un it
V
V
V
T
dt/dv
1)VINfrom30%to70%ofV
Supply Voltage -0.5to+7.0 V
CC
DC Input Voltage -0.5to+7.0 V
I
DC Output Voltage -0.5toVCC+0.5 V
O
DC Input Diode Current -20 mA
IK
DC Output Diode Current ±20 mA
DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature -65to+150
stg
Lead Temperature (10 sec) 300
L
Supply Voltage 2.0to5.5 V
CC
Input Voltage 0to5.5 V
I
Output Voltage 0toV
O
Operating Temperature -40to+85
op
(V
CC
CC
=3.3±0.3V)
=5.0±0.5V)
Input Rise and Fall Time (see note 1) (V
CC
25 mA
±
50 mA
±
CC
0to100
0to20
o
C
o
C
V
o
C
ns/V
ns/V
DC SPECIFICATIONS
Symb o l Para met er Test C o n dit io ns Val u e Unit
=25oC -40 to 85oC
V
CC
(V)
High Level Input
V
IH
Voltage
V
Low Level Input
IL
Voltage
V
High Level Output
OH
Voltage
Low Level Output
V
OL
Voltage
Input Leakage Current 0to5.5 VI=5.5VorGND ±0.1 ±1.0 µA
I
I
Quiescent Supply
I
CC
2.0 1.5 1.5
3.0to 5.5 0.7V
2.0 0.5 0.5
3.0to 5.5 0.3V
2.0 IO=-50µA1.92.0 1.9
3.0 I
4.5 I
3.0 I
4.5 I
=-50µA2.93.0 2.9
O
=-50µA4.44.5 4.4
O
=-4mA 2.58 2.48
O
=-8mA 3.94 3.8
O
2.0 IO=50µA 0.0 0.1 0.1
3.0 I
4.5 I
3.0 I
4.5 I
=50µA 0.0 0.1 0.1
O
=50µA 0.0 0.1 0.1
O
=4mA 0.36 0.44
O
=8mA 0.36 0.44
O
5.5 VI=VCCorGND 4 40 µA
Current
T
A
Min. Typ. Max. Min. Max.
CC
0.7V
CC
0.3V
CC
CC
V
V
V
V
3/9