SGS Thomson Microelectronics 74VHC139 Datasheet

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74VHC139

DUAL 2 TO 4 DECODER/DEMULTIPLEXER

■ HIGHSPEED:t

■ LOW POWER DISSIPATION:

=4 µA (MAX.) at TA=25oC

I

CC

■ HIGHNOISEIMMUNITY:

V

NIH=VNIL

■ POWERDOWNPROTECTIONON INPUTS

■ SYMMETRICALOUTPUTIMPEDANCE:

|=IOL=8 mA(MIN)

|I

OH

■ BALANCEDPROPAGATIONDELAYS:

t

≅ t

PLH

■ OPERATINGVOLTAGERANGE:

V

(OPR)= 2Vto 5.5V

CC

■ PINANDFUNCTIONCOMPATIBLEWITH

=28%VCC(MIN.)

PHL

=5.0ns (TYP.)atVCC=5V

PD

74SERIES139

■ IMPROVEDLATCH-UPIMMUNITY

DESCRIPTION

The 74VHC139 is an advanced high-speed
CMOS DUAL 2 TO 4 LINE DECODER/
DEMULTIPLEXER fabricated with sub-micron
silicon gate and double-layermetal wiring C

2

MOS

technology.
The active low enable input can be used for

M1

(Micro Package)

(TSSOPPackage)

T

ORDERCODES :

74VHC139M 74VHC139T

gating or as a data input for demultiplexing
applications. While the enable input is held high,
all four outputs are high independently of the
other inputs.

Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.

All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

June 1999

1/8

74VHC139

INPUT EQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYM BO L NAM E AND FU NCTIO N

1, 15 1G, 2G Enable Inputs

2, 3 1A, 1B Address Inputs

4, 5, 6,7 1Y0 to 1Y3 Outputs

12, 11, 10,92Y0 to 2Y3 Outputs

14, 13 2A, 2B Address Inputs

8 GND Ground (0V)

16 V

CC

Positive Supply Voltage

TRUTH TABLE

INPUTS OUTPUTS

ENABLE SELECT

G B A Y0Y1Y2Y3

HXXHHHH

LLLLHHH
LLHHLHH
LHLHHLH

X:Don’tCare

LHHHHHL

LOGICDIAGRAM

Thislogic diagram has notbe used to estimate propagation delays

2/8

74VHC139

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Val u e Uni t

V

V

V

I

I

OK

I

or I

I

CC

T

T

AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamage tothedevicemayoccur. Functionaloperationunderthese condition isnotimplied.

RECOMMENDEDOPERATINGCONDITIONS

Symb o l Para met er Value Un it

V

V

V

T

dt/dv

1)VINfrom30%to70%of V

Supply Voltage -0.5 to +7.0 V

CC

DC Input Voltage -0.5 to +7.0 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V

O

DC Input Diode Current - 20 mA

IK

DC Output Diode Current ± 20 mA
DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 300

L

Supply Voltage 2.0 to 5.5 V

CC

Input Voltage 0 to 5.5 V

I

Output Voltage 0 to V

O

Operating Temperature -40 to +85

op

(V

CC
CC

=3.3±0.3V)
=5.0±0.5V)

Input Rise and Fall Time (see note 1) (V

CC

25 mA

±

75 mA

±

CC

0 to 100

0to20

o

C

o

C

V

o

C

ns/V
ns/V

DC SPECIFICATIONS

Symb o l Parameter Test C o n dit i ons Val u e Uni t

=25oC -40 to 85oC

V

CC

(V)

High Level Input

V

IH

Voltage

V

Low Level Input

IL

Voltage

V

High Level Output

OH

Voltage

Low Level Output

V

OL

Voltage

Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA

I

I

Quiescent Supply

I

CC

2.0 1.5 1.5

3.0 to 5.5 0.7V

2.0 0.5 0.5

3.0 to 5.5 0.3V

2.0 IO=-50 µA 1.9 2.0 1.9

3.0 I

4.5 I

3.0 I

4.5 I

=-50 µA 2.9 3.0 2.9

O

=-50µA 4.4 4.5 4.4

O

=-4 mA 2.58 2.48

O

=-8 mA 3.94 3.8

O

2.0 IO=50 µA 0.0 0.1 0.1

3.0 I

4.5 I

3.0 I

4.5 I

=50 µA 0.0 0.1 0.1

O

=50µA 0.0 0.1 0.1

O

=4 mA 0.36 0.44

O

=8 mA 0.36 0.44

O

5.5 VI=VCCorGND 4 40 µA

Current

T

A

Min. Typ. Max. Min. Max.

CC

0.7V

CC

0.3V

CC

CC

V

V

V

V

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