SGS Thomson Microelectronics 74VHC132 Datasheet
QUAD 2-INPUT SCHMITT NAND GATE
■ HIGHSPEED:t
■ LOW POWER DISSIPATION:
=2 µA(MAX.)atTA=25oC
I
CC
■ TYPICALHYSTERESIS:V
■ POWERDOWNPROTECTIONON INPUTS
■ SYMMETRICALOUTPUTIMPEDANCE:
|I
|=IOL=8 mA(MIN)
OH
■ BALANCEDPROPAGATIONDELAYS:
t
≅ t
PLH
PHL
■ OPERATINGVOLTAGERANGE:
V
(OPR)= 2V to5.5V
CC
■ PINANDFUNCTIONCOMPATIBLEWITH
74SERIES132
■ IMPROVEDLATCH-UP IMMUNITY
■ LOWNOISE:V
DESCRIPTION
The 74VHC132 is an advanced high-speed
CMOS QUAD 2-INPUT SCHMITT NAND GATE
fabricated with sub-micron silicon gate and
double-layermetal wiring C
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
=4.9ns (TYP.)atVCC=5V
PD
=1VatVCC=4.5V
h
= 0.8V(Max.)
OLP
2
MOS technology.
74VHC132
PRELIMINARY DATA
M
(Micro Package)
(TSSOPPackage)
ORDERCODES :
74VHC132M 74VHC132T
regard to the supply voltage. This device can be
used to interface 5V to 3V.
Pin configuration and function are the same as
those of the VHC00 but the VHC132 has
hysteresis.
This together with its schmitt trigger function
allows it to be used on line receivers with slow
rise/fallinput signals.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
T
PIN CONNECTION AND IEC LOGICSYMBOLS
June 1999
1/7
74VHC132
INPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYMB OL NAME AND F UNCT IO N
1, 4, 9, 12 1A to 4A Data Inputs
2, 5, 10,13 1B to 4B Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
TRUTH TABLE
ABY
LLH
LHH
HLH
HHL
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Val u e Uni t
V
V
V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximumRatingsarethose valuesbeyond whichdamagetothedevicemayoccur. Functional operationunderthese condition isnot implied.
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current ± 20 mA
DC Output Current ± 25 mA
O
DC VCCor Ground Current ± 50 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
o
C
o
C
RECOMMENDED OPERATINGCONDITIONS
Symb o l Para met er Value Un it
V
V
V
T
2/7
Supply Voltage 2.0 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage 0 to V
O
Operating Temperature -40 to +85
op
CC
V
o
C
74VHC132
DC SPECIFICATIONS
Symb o l Para met er Test Co n diti o ns Val u e Uni t
T
V
CC
High Level Threshold
V
t+
Voltage
(V)
3.0 2.2 2.2
4.5 3.15 3.15
Min. Typ. Max. Min. Max.
5.5 3.85 3.85
Low Level Threshold
V
t-
Voltage
3.0 0.9 0.9
4.5 1.35 1.35
5.5 1.65 1.65
Hysteresis Voltage 3.0 0.3 1.2 0.3 1.2
V
h
4.5 0.4 1.4 0.4 1.4
5.5 0.5 1.6 0.5 1.6
High Level Output
V
OH
Voltage
Low Level Output
V
OL
Voltage
Input Leakage Current 0 to5.5 VI= 5.5V or GND
I
I
Quiescent Supply
I
CC
2.0 IO=-50µA 1.9 2.0 1.9
3.0 I
4.5 I
3.0 I
4.5 I
=-50 µA 2.9 3.0 2.9
O
=-50 µA 4.4 4.5 4.4
O
=-4 mA 2.58 2.48
O
=-8 mA 3.94 3.8
O
2.0 IO=50µA 0.0 0.1 0.1
3.0 I
4.5 I
3.0 I
4.5 I
=50µA 0.0 0.1 0.1
O
=50 µA 0.0 0.1 0.1
O
=4 mA 0.36 0.44
O
=8 mA 0.36 0.44
O
5.5 VI=VCCorGND 2 20
Current
=25oC -40 to 85oC
A
0.1
±
1.0
±
µ
µ
V
V
V
V
V
A
A
AC ELECTRICAL CHARACTERISTICS (Inputtr=tf=3 ns)
Symbol Parameter Test Condition Value Unit
t
Propagation Delay
PLH
t
Time
PHL
(*) Voltagerangeis 3.3V ± 0.3V
(**) Voltagerangeis 5V± 0.5V
V
3.3
3.3
5.0
5.0
CC
(V)
(**)
(**)
C
L
(pF)
(*)
15 7.6 11.9 1.0 14.0
(*)
50 10.1 15.4 1.0 17.5
T
=25oC -40 to 85oC
A
Min. Typ. Max. Min. Max.
15 4.9 7.7 1.0 9.0
50 6.4 9.7 1.0 11.0
ns
CAPACITIVE CHARACTERISTICS
Symb o l Para met er Test Co n diti o ns Val u e Uni t
=25oC -40 to 85oC
T
A
Min. Typ. Max. Min. Max.
Input Capacitance 4 10 10
C
IN
Power Dissipation
C
PD
16 pF
Capacitance (note 1)
1)CPDisdefinedas thevalueoftheIC’sinternal equivalent capacitance whichiscalculatedfromtheoperating current consumption without load.(Referto
TestCircuit).Averageoperatingcurrent canbeobtainedbythefollowingequation.I
(opr)=CPD• VCC• fIN+ICC/4(per Gate)
CC
pF
3/7
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