SGS Thomson Microelectronics 74VHC126 Datasheet



QUAD BUS BUFFERS (3-STATE)

■ HIGHSPEED:t

■ LOW POWER DISSIPATION:

I

=4 µA (MAX.) at TA=25oC

CC

■ HIGHNOISEIMMUNITY:

V

NIH=VNIL

■ POWERDOWNPROTECTIONON INPUTS

■ SYMMETRICALOUTPUTIMPEDANCE:

|I

|=IOL=8 mA(MIN)

OH

■ BALANCEDPROPAGATIONDELAYS:

≅ t

t

PLH

■ OPERATINGVOLTAGERANGE:

V

(OPR)= 2Vto 5.5V

CC

■ PINANDFUNCTION COMPATIBLEWITH

=28%VCC(MIN.)

PHL

74SERIES126

■ IMPROVEDLATCH-UP IMMUNITY

■ LOWNOISE:V

DESCRIPTION

The 74VHC126 is an advanced high-speed CMOS QUAD BUS BUFFERS fabricated with sub-micron silicon gate and double-layer metal wiringC

2

MOStechnology.

=3.8ns(TYP.)atVCC=5V

PD

= 0.8V(Max.)

OLP

74VHC126

PRELIMINARY DATA

M

(Micro Package)

(TSSOPPackage)

ORDERCODES :

74VHC126M 74VHC126T

This device requires the 3-STATEcontrol input G to be set low to place the output into the high impedancestate.

Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface5V to 3V.

All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.

T

PIN CONNECTION AND IECLOGIC SYMBOLS

June 1999

1/8

74VHC126

INPUT EQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYMB OL NAME AND FU NCTION

1, 4, 10, 13 1G to 4G Output Enable Inputs

2, 5, 9, 12 1A to 4A Data Inputs

3, 6, 8, 11 1Y to 4Y Data Outputs

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

TRUTH TABLE

AGY

XLZ

LHL

HHH

X:”H” or”L” Z: HighImpedance

ABSOLUTE MAXIMUMRATINGS

Symb o l Para met er Val u e Uni t

V

I

OK

I

or I

I

CC

T

AbsoluteMaximumRatingsarethosevalues beyond whichdamagetothedevicemayoccur. Functionaloperationundertheseconditionisnotimplied.

Supply Voltage -0.5 to +7.0 V

CC

DC Input Voltage -0.5 to +7.0 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V

O

DC Input Diode Current - 20 mA

IK

DC Output Diode Current ± 20 mA DC Output Current ± 25 mA

O

DC VCCor Ground Current ± 50 mA

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 300

L

o

C

o

C

RECOMMENDEDOPERATINGCONDITIONS

Symb o l Para met er Value Un it

V

T

dt/dv

1)VINfrom30%to70%of V

2/8

Supply Voltage 2.0 to 5.5 V

CC

Input Voltage 0 to 5.5 V

I

Output Voltage 0 to V

O

Operating Temperature -40 to +85

op

(V

CC CC

=3.3±0.3V) =5.0±0.5V)

Input Rise and Fall Time (see note 1) (V

CC

0 to 100

0to20

V

o

C

ns/V ns/V

74VHC126

DC SPECIFICATIONS

Symb o l Para meter Test C o n ditio ns Val u e Uni t

T

V

CC

(V)

High Level Input

V

IH

Voltage

V

Low Level Input

IL

Voltage

V

High Level Output

OH

Voltage

2.0 1.5 1.5

3.0 to 5.5 0.7V

2.0 0.5 0.5

3.0 to 5.5 0.3V

2.0 IO=-50µA 1.9 2.0 1.9

3.0 I

4.5 I

3.0 I

4.5 I

Low Level Output

V

OL

Voltage

2.0 IO=50µA 0.0 0.1 0.1

3.0 I

4.5 I

3.0 I

4.5 I

High Impedance

I

OZ

Output Leakage

5.5

VO=VCCor GND

Current Input Leakage Current 0 to 5.5 VI= 5.5V or GND

I

Quiescent Supply

I

CC

5.5 VI=VCCorGND 4 40

Current

Min. Typ. Max. Min. Max.

=-50µA 2.9 3.0 2.9

O

=-50µA 4.4 4.5 4.4

O

=-4 mA 2.58 2.48

O

=-8 mA 3.94 3.8

O

=50µA 0.0 0.1 0.1

O

=50µA 0.0 0.1 0.1

O

=4 mA 0.36 0.44

O

=8 mA 0.36 0.44

O

VI=VIHor V

IL

=25oC -40 to 85oC

A

±

0.7V

CC

0.25

0.1

CC

0.3V

±

2.5

1.0

CC

µ

µ µ

V

A

A A

AC ELECTRICAL CHARACTERISTICS (Input tr=tf=3 ns)

Symbol Parameter Test Condition Value Unit

t

Propagation Delay

PLH

t

Time

PHL

t

Output Disable Time 3.3

PLZ

t

PHZ

Output Enable Time 3.3

t

PZL

t

PZH

(*) Voltagerangeis3.3V± 0.3V (**) Voltagerangeis 5V± 0.5V

V

3.3

5.0

3.3

5.0

CC

(V)

(**) (**)

(**)

C

L

(pF)

(*)

15 5.6 8.0 1.0 9.5

(*)

50 8.1 11.5 1.0 13.0

T

=25oC -40 to 85oC

A

Min. Typ. Max. Min. Max.

15 3.8 5.5 1.0 6.5 50 5.3 7.5 1.0 8.5

(*) (*)

15 RL=1K 50 RL=1K

Ω Ω

5.4 8.0 1.0 9.5

7.9 11.5 1.0 13.0 15 RL=1KΩ 3.6 5.1 1.0 6.0 50 RL=1K

(*)

50 RL=1KΩ 9.5 13.2 1.0 15.0 50 RL=1K

Ω

5.1 7.1 1.0 8.0

6.1 8.8 1.0 10.0

ns

3/8