SGS Thomson Microelectronics 74VHC125 Datasheet



QUAD BUS BUFFERS (3-STATE)

■ HIGHSPEED:t

■ LOW POWER DISSIPATION:

I

=4 µA (MAX.) at TA=25oC

CC

■ HIGHNOISEIMMUNITY:

V

NIH=VNIL

■ POWERDOWNPROTECTIONON INPUTS

■ SYMMETRICALOUTPUTIMPEDANCE:

|I

|=IOL=8 mA(MIN)

OH

■ BALANCEDPROPAGATIONDELAYS:

≅ t

t

PLH

■ OPERATINGVOLTAGERANGE:

V

(OPR)= 2Vto 5.5V

CC

■ PINANDFUNCTION COMPATIBLEWITH

=28%VCC(MIN.)

PHL

74SERIES125

■ IMPROVEDLATCH-UP IMMUNITY

■ LOWNOISE:V

DESCRIPTION

The 74VHC125 is an advanced high-speed CMOS QUAD BUS BUFFERS fabricated with sub-micron silicon gate and double-layer metal wiringC

2

MOStechnology.

=3.8ns(TYP.)atVCC=5V

PD

= 0.8V(Max.)

OLP

74VHC125

PRELIMINARY DATA

M

(Micro Package)

(TSSOPPackage)

ORDERCODES :

74VHC125M 74VHC125T

This device requires the 3-STATEcontrol input G to be set high to place the output into the high impedancestate.

Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface5V to 3V.

All inputs and outputs are equipped with protection circuits against static discharge, giving them 2kV ESD immunity and transient excess voltage.

T

PIN CONNECTION AND IECLOGIC SYMBOLS

June 1999

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74VHC125

INPUT EQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYMB OL NAME AND FU NCTION

1, 4, 10, 13 1G to 4G Output Enable Inputs

2, 5, 9, 12 1A to 4A Data Inputs

3, 6, 8, 11 1Y to 4Y Data Outputs

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

TRUTH TABLE

AGY

XHZ

LLL

HLH

X:”H” or”L” Z: HighImpedance

ABSOLUTE MAXIMUMRATINGS

Symb o l Para met er Val u e Uni t

V

I

OK

I

or I

I

CC

T

AbsoluteMaximumRatingsarethosevalues beyond whichdamagetothedevicemayoccur. Functionaloperationundertheseconditionisnotimplied.

Supply Voltage -0.5 to +7.0 V

CC

DC Input Voltage -0.5 to +7.0 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V

O

DC Input Diode Current - 20 mA

IK

DC Output Diode Current ± 20 mA DC Output Current ± 25 mA

O

DC VCCor Ground Current ± 50 mA

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 300

L

o

C

o

C

RECOMMENDEDOPERATINGCONDITIONS

Symb o l Para met er Value Un it

V

T

dt/dv

1)VINfrom30%to70%of V

2/8

Supply Voltage 2.0 to 5.5 V

CC

Input Voltage 0 to 5.5 V

I

Output Voltage 0 to V

O

Operating Temperature -40 to +85

op

(V

CC CC

=3.3±0.3V) =5.0±0.5V)

Input Rise and Fall Time (see note 1) (V

CC

0 to 100

0to20

V

o

C

ns/V ns/V

74VHC125

DC SPECIFICATIONS

Symb o l Para met er Test C o n ditio ns Val u e Uni t

T

V

CC

High Level Input

V

IH

Voltage

V

Low Level Input

IL

Voltage

V

High Level Output

OH

Voltage

Low Level Output

V

OL

Voltage

High Impedance

I

OZ

Output Leakage

(V)

2.0 1.5 1.5

3.0 to 5.5 0.7V

2.0 0.5 0.5

3.0 to 5.5 0.3V

2.0 IO=-50 µA 1.9 2.0 1.9

3.0 I

4.5 I

3.0 I

4.5 I

=-50µA 2.9 3.0 2.9

O

=-50µA 4.4 4.5 4.4

O

=-4 mA 2.58 2.48

O

=-8 mA 3.94 3.8

O

2.0 IO=50 µ A 0.0 0.1 0.1

3.0 I

4.5 I

3.0 I

4.5 I

=50µA 0.0 0.1 0.1

O

=50µA 0.0 0.1 0.1

O

=4 mA 0.36 0.44

O

=8 mA 0.36 0.44

O

VI=VIHor V

5.5

VO=VCCor GND

Min. Typ. Max. Min. Max.

IL

Current Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA

I

Quiescent Supply

I

CC

5.5 VI=VCCorGND 4 40

Current

=25oC -40 to 85oC

A

CC

0.7V

CC

±0.25 ±2.5 µA

CC

0.3V

CC

µ

V

A

AC ELECTRICAL CHARACTERISTICS (Input tr=tf=3 ns)

Symbol Parameter Test Condition Value Unit

t

Propagation Delay

PLH

t

Time

PHL

t

Output Disable Time 3.3

PLZ

t

PHZ

t

Output Enable Time 3.3

PZL

t

PZH

(*) Voltagerangeis3.3V± 0.3V (**) Voltagerangeis 5V± 0.5V

V

3.3

5.0

3.3

5.0

CC

(V)

(**) (**)

(**)

C

L

(pF)

(*) (*)

15 5.6 8.0 1.0 9.5 50 8.1 11.5 1.0 13.0

Min. Typ. Max. Min. Max.

15 3.8 5.5 1.0 6.5 50 5.3 7.5 1.0 8.5

(*) (*)

15 RL=1KΩ 5.4 8.0 1.0 9.5 50 RL=1KΩ 7.9 11.5 1.0 13.0 15 RL=1KΩ 3.6 5.1 1.0 6.0

(*)

50 RL=1KΩ 9.5 13.2 1.0 15.0 50 RL=1K

50 RL=1K

Ω

=25oC -40 to 85oC

T

A

5.1 7.1 1.0 8.0

6.1 8.8 1.0 10.0

ns

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