SGS Thomson Microelectronics 74VHC04 Datasheet



■ HIGHSPEED:t

■

LOW POWER DISSIPATION: I

=2 µA (MAX.)at TA=25oC

CC

■

HIGHNOISEIMMUNITY: V

NIH=VNIL

■ POWERDOWNPROTECTIONON INPUTS

■

SYMMETRICALOUTPUTIMPEDANCE: |I

|=IOL=8 mA(MIN)

OH

■ BALANCEDPROPAGATIONDELAYS:

t

≅ t

PLH

■ OPERATINGVOLTAGERANGE:

(OPR)= 2Vto5.5V

V

CC

■ PINANDFUNCTIONCOMPATIBLEWITH

=28%VCC(MIN.)

PHL

=3.8ns(TYP.)atVCC=5V

PD

74SERIES04

■ IMPROVEDLATCH-UPIMMUNITY

■ LOWNOISE:V

= 0.8V(Max.)

OLP

DESCRIPTION

The 74VHC04 is an advanced high-speedCMOS HEX INVERTER fabricated with sub-micron silicon gate and double-layermetal wiring C

2

MOS

technology.

74VHC04

HEX INVERTER

PRELIMINARY DATA

M

(Micro Package)

(TSSOPPackage)

ORDERCODES :

74VHC04M 74VHC04T

The internal circuit is composed of 3 stages including buffer output, which provide high noise immunityand stableoutput.

Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.

All inputs and outputs are equipped with protection circuits against static discharge, giving them 2kV ESD immunity and transient excess voltage.

T

PIN CONNECTION AND IEC LOGICSYMBOLS

June 1999

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74VHC04

INPUT EQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYMB OL NAME AND FUNCTIO N

1, 3, 5, 9,

1A to 6A Data Inputs

11, 13

2, 4, 6, 8,

1Y to 6Y Data Outputs

10, 12

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

TRUTH TABLE

AY

LH

HL

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Val u e Uni t

V

I

OK

I

or I

I

CC

T

AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamageto thedevicemayoccur.Functionaloperation underthesecondition isnotimplied.

Supply Voltage -0.5 to +7.0 V

CC

DC Input Voltage -0.5 to +7.0 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V

O

DC Input Diode Current - 20 mA

IK

DC Output Diode Current DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 300

L

20 mA

±

25 mA

±

75 mA

±

o

C

o

C

RECOMMENDED OPERATINGCONDITIONS

Symb o l Para met er Value Un it

V

T

dt/dv

1)VINfrom30%to70%of V

2/7

Supply Voltage 2.0 to 5.5 V

CC

Input Voltage 0 to 5.5 V

I

Output Voltage 0 to V

O

Operating Temperature -40 to +85

op

(V

CC CC

=3.3±0.3V) =5.0±0.5V)

Input Rise and Fall Time (see note 1) (V

CC

0 to 100

0to20

V

o

C

ns/V ns/V

74VHC04

DC SPECIFICATIONS

Symb o l Para met er Test C on dit i o ns Val u e Uni t

T

V

CC

(V)

High Level Input

V

IH

Voltage

V

Low Level Input

IL

Voltage

V

High Level Output

OH

Voltage

Low Level Output

V

OL

Voltage

Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA

I

Quiescent Supply

I

CC

2.0 1.5 1.5

3.0 to 5.5 0.7V

2.0 0.5 0.5

3.0 to 5.5 0.3V

2.0 IO=-50 µA 1.9 2.0 1.9

3.0 I

4.5 I

3.0 I

4.5 I

=-50µA 2.9 3.0 2.9

O

=-50µA 4.4 4.5 4.4

O

=-4 mA 2.58 2.48

O

=-8 mA 3.94 3.8

O

2.0 IO=50 µA 0.0 0.1 0.1

3.0 I

4.5 I

3.0 I

4.5 I

=50µA 0.0 0.1 0.1

O

=50µA 0.0 0.1 0.1

O

=4 mA 0.36 0.44

O

=8 mA 0.36 0.44

O

5.5 VI=VCCorGND 2 20 µA

Min. Typ. Max. Min. Max.

Current

=25oC -40 to 85oC

A

CC

0.7V

CC

0.3V

CC

V

AC ELECTRICAL CHARACTERISTICS (Input tr=tf=3 ns)

Symbol Parameter Test Condition Value Unit

t

Propagation Delay

PLH

t

Time

PHL

(*) Voltagerangeis 3.3V± 0.3V (**) Voltagerangeis 5V± 0.5V

V

3.3

5.0

CC

(V)

(**) (**)

C

L

(pF)

(*) (*)

15 5.0 7.1 1.0 8.5 50 7.5 10.6 1.0 12.0

T

=25oC -40 to 85oC

A

Min. Typ. Max. Min. Max.

ns

15 3.8 5.5 1.0 6.5 50 5.3 7.5 1.0 8.5

CAPACITIVE CHARACTERISTICS

Symb o l Para met er Test C on dit i o ns Val u e Uni t

=25oC -40 to 85oC

T

A

Min. Typ. Max. Min. Max.

Input Capacitance 4 10 10

C

IN

Power Dissipation

C

PD

19 pF

Capacitance (note 1)

1)CPDisdefined asthevalue oftheIC’sinternal equivalentcapacitance whichis calculated fromtheoperatingcurrent consumptionwithout load.(Referto TestCircuit).Average operatingcurrent canbeobtainedbythefollowingequation.I

(opr)= CPD• VCC• fIN+ICC/4(perGate)

CC

pF

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