SGS Thomson Microelectronics 74VHC02 Datasheet
■ HIGHSPEED:t
■
LOW POWER DISSIPATION:
I
=2 µA (MAX.)at TA=25oC
CC
■
HIGHNOISEIMMUNITY:
V
NIH=VNIL
■ POWERDOWNPROTECTIONON INPUTS
■
SYMMETRICAL OUTPUTIMPEDANCE:
|I
|=IOL=8 mA(MIN)
OH
■ BALANCEDPROPAGATIONDELAYS:
t
≅ t
PLH
■ OPERATINGVOLTAGERANGE:
(OPR)= 2Vto 5.5V
V
CC
■ PINANDFUNCTIONCOMPATIBLEWITH
=28%VCC(MIN.)
PHL
=3.6ns (TYP.)at VCC=5V
PD
74SERIES 02
■ IMPROVEDLATCH-UP IMMUNITY
■ LOWNOISE:V
= 0.8V(Max.)
OLP
DESCRIPTION
The 74VHC02 is an advanced high-speedCMOS
QUAD 2-INPUT NOR GATE fabricated with
sub-micron silicon gate and double-layer metal
wiringC
2
MOStechnology.
74VHC02
QUAD 2-INPUT NOR GATE
PRELIMINARY DATA
M
(Micro Package)
(TSSOPPackage)
ORDERCODES :
74VHC02M 74VHC02T
The internal circuit is composed of 3 stages
including buffer output, which provides high noise
immunityand stable output.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to thesupply voltage. This device can be
used to interface 5V to 3V.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2kV ESD immunity and transient excess
voltage.
T
PIN CONNECTION ANDIEC LOGICSYMBOLS
June 1999
1/7
74VHC02
INPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYMB OL NAME AND FU NCTIO N
2, 5, 8, 11 1A to 4A Data Inputs
3, 6, 9, 12 1B to 4B Data Inputs
1, 4, 10,13 1Y to 4Y Data Outputs
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
TRUTH TABLE
ABY
LLH
LHL
HLL
HHL
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Val u e Uni t
V
V
V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximum Ratingsarethosevaluesbeyond whichdamagetothedevicemayoccur. Functionaloperationunderthesecondition isnotimplied.
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current ± 20 mA
DC Output Current ± 25 mA
O
DC VCCor Ground Current ± 50 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
o
C
o
C
RECOMMENDEDOPERATINGCONDITIONS
Symb o l Para met er Value Un it
V
V
V
T
dt/dv
1)VINfrom30%to70%of V
2/7
Supply Voltage 2.0 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage 0 to V
O
Operating Temperature -40 to +85
op
(V
CC
CC
=3.3±0.3V)
=5.0±0.5V)
Input Rise and Fall Time (see note 1) (V
CC
CC
0 to 100
0to20
V
o
C
ns/V
ns/V
74VHC02
DC SPECIFICATIONS
Symb o l Para met er Test C o n diti o ns Val u e Uni t
T
V
CC
(V)
High Level Input
V
IH
Voltage
V
Low Level Input
IL
Voltage
V
High Level Output
OH
Voltage
Low Level Output
V
OL
Voltage
Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA
I
I
Quiescent Supply
I
CC
2.0 1.5 1.5
3.0 to 5.5 0.7V
2.0 0.5 0.5
3.0 to 5.5 0.3V
2.0 IO=-50 µA 1.9 2.0 1.9
3.0 I
4.5 I
3.0 I
4.5 I
=-50µA 2.9 3.0 2.9
O
=-50µA 4.4 4.5 4.4
O
=-4 mA 2.58 2.48
O
=-8 mA 3.94 3.8
O
2.0 IO=50 µA 0.0 0.1 0.1
3.0 I
4.5 I
3.0 I
4.5 I
=50µA 0.0 0.1 0.1
O
=50µA 0.0 0.1 0.1
O
=4 mA 0.36 0.44
O
=8 mA 0.36 0.44
O
5.5 VI=VCCorGND 2 20 µA
Min. Typ. Max. Min. Max.
Current
=25oC -40 to 85oC
A
CC
0.7V
CC
CC
0.3V
CC
V
V
V
V
AC ELECTRICAL CHARACTERISTICS (Inputtr=tf=3 ns)
Symbol Parameter Test Condition Value Unit
t
Propagation Delay
PLH
t
Time
PHL
(*) Voltagerangeis3.3V ± 0.3V
(**) Voltagerange is5V ± 0.5V
V
3.3
3.3
5.0
5.0
CC
(V)
(**)
(**)
C
L
(pF)
(*)
(*)
15 5.6 7.9 1.0 9.5
50 8.1 11.4 1.0 13.0
T
=25oC -40 to 85oC
A
Min. Typ. Max. Min. Max.
ns
15 3.6 5.5 1.0 6.5
50 5.1 7.5 1.0 8.5
CAPACITIVE CHARACTERISTICS
Symb o l Para met er Test C o n diti o ns Val u e Uni t
=25oC -40 to 85oC
T
A
Min. Typ. Max. Min. Max.
Input Capacitance 4 10 10
C
IN
Power Dissipation
C
PD
15 pF
Capacitance (note 1)
1)CPDisdefinedasthevalue oftheIC’sinternalequivalentcapacitance whichiscalculatedfromtheoperatingcurrentconsumptionwithout load.(Referto
TestCircuit).Average operatingcurrent canbeobtainedbythefollowing equation.I
(opr)=CPD• VCC• fIN+ICC/4(perGate)
CC
pF
3/7
Loading...