SGS Thomson Microelectronics 74VHC00MTR, 74VHC00M, 74VHC00TTR Datasheet

74VHC00

QUAD 2-INPUT NAND GATE

■ HIGH SPEED: t

■ LOW POWER DISSIPATION:

I

= 2 µA (MAX.) at TA=25°C

CC

■ HIGH NOISE IMMUNITY:

V

= V

NIH

■ POWER DOWN PROTECTION ON INPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

| = IOL = 8mA (MIN)

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

■ OPERATING VOLTAGE RANGE:

V

(OPR) = 2V to 5.5V

CC

■ PIN AND FUNCTION COMPATIBLE WITH

= 28% VCC (MIN.)

NIL

PHL

= 3.7ns (TYP.) at VCC = 5V

PD

74 SERIES 00

■ IMPROVED LATCH-UP IMMUNITY

■ LOW NOISE: V

= 0.8V (MAX.)

OLP

DESCRIPTION

The 74VHC00 is a n advanced high-speed CM OS
QUAD 2-INPUT NAND GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C

2

MOS technology.
The internal circuit is composed of 3 stages
including buffer ou tput, which provides high no ise
immunity and stable output.

TSSOPSOP

ORDER CODES

PACKAGE TUBE T & R

SOP 74VHC00M 74VHC00MTR

TSSOP 74VHC00TTR

Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
All inputs and outputs are equipped with
protection circuits against stat ic discharge, giving
them 2KV ESD immunity and transient excess
voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/8June 2001

74VHC00

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 4, 9, 12 1A to 4A Data Inputs

2, 5, 10, 13 1B to 4B Data Inputs

3, 6, 8, 11 1Y to 4Y Data Outputs

7 GND Ground (0V)

14

V

CC

TRUTH TABLE

ABY

LLH

LHH
HLH
HHL

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

I

OK

I

I

or I

CC

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCC or Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

Positive Supply Voltage

-0.5 to +7.0 V

-0.5 to +7.0 V
V

- 20 mA

± 20 mA
± 25 mA
± 50 mA

-65 to +150 °C

300 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V

V

T

dt/dv

1) VIN from 30 % to 70% of V

2/8

Supply Voltage

CC

Input Voltage

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (note 1) (V
(V

CC

= 3.3 ± 0.3V)

CC

= 5.0 ± 0.5V)

CC

2 to 5.5 V
0 to 5.5 V

CC

-55 to 125 °C
0 to 100

0 to 20

V

ns/V

DC SPECIFICATIONS

Symbol Parameter

V

V

V

V

I

High Level Input

IH

Voltage

Low Level Input

IL

Voltage

High Level Output

OH

Voltage

Low Level Output

OL

Voltage

I

Input Leakage

I

Current
Quiescent Supply

CC

Current

Test Condition Value

V

(V)

CC

= 25°C

A

Min. Typ. Max. Min. Max. Min. Max.

-40 to 85°C -55 to 125°C

T

2.0 1.5 1.5 1.5

3.0 to

5.5

0.7V

CC

0.7V

CC

0.7V

CC

2.0 0.5 0.5 0.5

3.0 to

5.5

2.0

3.0

4.5

3.0

4.5

2.0

3.0

4.5

3.0

4.5

0 to

5.5

5.5

=-50 µA

I

O

I

=-50 µA

O

I

=-50 µA

O

I

=-4 mA

O

I

=-8 mA

O

IO=50 µA
I

=50 µA

O

I

=50 µA

O

I

=4 mA

O

I

=8 mA

O

V

= 5.5V or GND

I

= VCC or GND

V

I

1.9 2.0 1.9 1.9

2.9 3.0 2.9 2.9

4.4 4.5 4.4 4.4

2.58 2.48 2.4

3.94 3.8 3.7

0.3V

CC

0.3V

CC

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.36 0.44 0.55

0.36 0.44 0.55

± 0.1 ± 1 ± 1 µA

22020µA

74VHC00

Unit

0.3V

CC

V

V

V

V

AC ELECTRICAL CHARACTERISTICS (Input t

= tf = 3ns)

r

Test Condition Value

= 25°C

Symbol Parameter

t

PLH tPHL

(*) Vol tage range is 3.3V ± 0.3V
(**) Voltage range is 5.0V ±

Propagation Delay
Time

0.5V

V

3.3

3.3

5.0

5.0

C

CC

(V)

L

(pF)

(*)

15 5.5 7.9 1.0 9.5 1.0 9.5

(*)

50 8.0 11.4 1.0 13.0 1.0 13.0

(**)

15 3.7 5.5 1.0 6.5 1.0 6.5

(**)

50 5.2 7.5 1.0 8.5 1.0 8.5

T

A

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

Unit

ns

CAPACITIVE CHARACTERISTICS

Test Condition Value

= 25°C

Symbol Parameter

T

A

Min. Typ. Max. Min. Max. Min. Max.

C

C

Input Capacitance

IN

Power Dissipation

PD

Capacitance

6101010pF

19 pF

(note 1)

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

-40 to 85°C -55 to 125°C

= CPD x VCC x fIN + ICC/4 (per gate)

CC(opr)

Unit

3/8