SGS Thomson Microelectronics 74VCXH16244TTR Datasheet

74VCXH16244
LOW VOL TAGE CMOS 16-BIT BUS BUFFER (3-S TATE INV.)
WITH 3.6V TOLERANT INPUTS AND OUTPUTS
3.6V TOLERANT INPUTS AND OUTPUTS
HIGH SPEED :
t
= 2.5 ns (MAX.) at VCC=3.0to3.6V
PD
= 3.0 ns (MAX.) at VCC=2.3to2.7V
PD
POWER DOWN PROTECTION ON INPUTS
AND OUTPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|I
|=IOL= 24mA (MIN) at VCC=3.0V
OH
|=IOL= 18mA (MIN) at VCC=2.3V
|I
OH
OPERATING VOLTAGE RANGE:
(OPR) = 2.3V to 3.6V
V
CC
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES H16244
BUS HOLD PROVIDED ON DATA INPUTS
LATCH-UP P ERFO RMANCE EXCEEDS
300mA (JESD 17)
ESD PERFORMANCE:
HBM > 2000V (MIL STD 883 method 3015); MM > 200V
ORDER CODES
PACKAGE TUBE T & R
TSSOP 74VCXH16244TTR
PIN CO NNE CTION
TSSOP
DESCRIPTION
The 74VCXH16244 is a low voltage CMOS 16 BIT BUS BUFFER (NON I NVER TED) fabricated with sub-micron silicon gate and five-layer metal wiring
2
C
MOS technology. It is ideal for low power and very high s peed 2.3 to 3.6V applications; it can be interfaced to 3.6V signal environment for both inputs and outputs. Any nG BUFFERS. Output Enable input (nG
output con trol governs four BUS
) tied together gives full 16-bit operation. When nG
is LO W, the outputs are on. When nG is HIGH, the output are in high impedance state. This device is designed to be used with 3 state memory address drivers, etc. Bus hold on data inputs is p ro vided in order to eli minate the need f or external pull-up or pull-down resistor. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient exces s voltage.
1/11February 2003
74VCXH16244
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
11G
2, 3, 5, 6 1Y1 to 1Y4 Data Outputs
8, 9, 11, 12 2Y1 to 2Y4 Data Outputs 13, 14, 16, 17 3Y1 to 3Y4 Data Outputs 19, 20, 22, 23 4Y1 to 4Y4 Data Outputs
24 4G
25 3G 30, 29, 27, 26 4A1 to 4A4 Data Outputs 36, 35, 33, 32 3A1 to 3A4 Data Outputs 41, 40, 38, 37 2A1 to 2A4 Data Outputs 47, 46, 44, 43 1A1 to 1A4 Data Outputs
48 2G 4, 10, 15, 21,
28, 34, 39, 45
7, 18, 31, 42
GND Ground (0V)
V
CC
Output Enable Input
Output Enable Input Output Enable Input
Output Enable Input
Positive Supply Voltage
TRUTH TABLE
INPUTS OUTPUT
G
LLL LHH
HXZ
X : Don‘t Care Z : High Impedance
An Yn
IEC LOGIC SYMBOLS
2/11
74VCXH16244
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V V V
I
I
OK
I
or I
I
CC
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied
1) I
absolute maximum rating must be observed
O
2) V
<GND,VO>V
O
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V V
I
OH,IOL
I
OH,IOL
T
dt/dv Input Rise and Fall Time (note 1) 0 to 10 ns/V
1) VINfrom0.8Vto 2V at VCC=3.0V
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage (OFF State)
O
DC Output Voltage (High or Low State) (note 1) -0.5 to VCC+ 0.5
O
DC Input Diode Current
IK
DC Output Diode Current (note 2) DC Output Current
O
DC VCCor Ground Current per Supply Pin
GND
Power Dissipation
D
Storage Temperature
stg
Lead Temperature (10 sec)
L
CC
Supply Voltage
CC
Input Voltage
I
Output Voltage (OFF State)
O
Output Voltage (High or Low State) 0 to V
O
High or Low Level Output Current (VCC= 3.0 to 3.6V) High or Low Level Output Current (VCC= 2.3 to 2.7V) Operating Temperature
op
-0.5 to +4.6 V
-0.5 to +4.6 V
-0.5 to +4.6 V
-50 mA
-50 mA
± 50 mA
± 100 mA
400 mW
-65 to +150 °C 300 °C
2.3 to 3.6 V
-0.3 to 3.6 V 0 to 3.6 V
CC
± 24 mA ± 18 mA
-55 to 125 °C
V
V
3/11
74VCXH16244
DC SPECIFICATIONS (2.7V < VCC< 3.6V unless otherwise specified)
Test Condition Value
Symbol Parameter
V
V
V
V
I
I(HOLD)
I
I
OZ
High Level Input
IH
Voltage Low Level Input
IL
Voltage High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage
I
I
Current Input Hold Current
Power Off Leakage
off
Current High Impedance
Output Leakage Current
I
CC
I
Quiescent Supply Current
ICCincr. per Input
CC
V
CC
(V)
2.7to3.6
2.7to3.6
2.7
3.0
2.7to3.6
2.7
3.0
2.7to3.6
3.0
3.6 0
2.7to3.6
2.7to3.6
2.7to3.6
-40to85°C -55to125°C
Min. Max. Min. Max.
2.0 2.0
0.8 0.8
IO=-100 µAVCC-0.2 VCC-0.2
=-12 mA
I
O
I
=-18 mA
O
=-24 mA
I
O
IO=100 µA
I
=12 mA
O
I
=18 mA
O
=24 mA
I
O
V
I=VCC
or GND
VI= 0.8V
=2V
V
I
= 0 to 3.6V
V
I
V
or VO= 0 to 3.6V
I
I=VIH
or V
V
VO= 0 to 3.6V
V
V
I
or GND
I=VCC
or VO=VCCto
3.6V
VIH=VCC-0.6V
IL
2.2 2.2
2.4 2.4
2.2 2.2
0.2 0.2
0.4 0.4
0.4 0.4
0.55 0.55 ± 5 ± 5 µA
75 75
-75 -75 ± 500 ± 500
10 10 µA
± 10 ± 10 µA
20 20
± 20 ± 20
750 750 µA
Unit
V
V
V
µA
µA
4/11
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