SGS Thomson Microelectronics 74V2T70CTR, 74V2T70STR Datasheet

1/7June 2003

■ HIGH SPEED: t

PD

= 3.6ns (TYP.) at VCC=5V

■ LOW POWER DISSIPATION:

I

CC

=1µA(MAX.) atTA=25°C

■ COMPATIBLE WITHTTL OUTPUTS:

V

IH

=2V(MIN),VIL=0.8V(MAX)

■ POWER DOWN PROT ECTION ON INPUT

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

OH

|=IOL=8mA(MIN)atVCC=4.5V

■ BALANCED PROPAGATION DELAYS:

t

PLH

≅ t

PHL

■ OPERATING VOLTAGE RANG E:

V

CC

(OPR) = 4.5V to 5.5V

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2T70 is an advanced high-speed CMOS
TRIPLE BUFFER fabricated with s ub-micron
silicon gate and double-layer me tal wiring C

2

MOS

technology.

The internal circuit is composed of 2 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is prov ided on input and 0
to 7V c an be accepted on input with no regard t o
the supply voltage. This device can be used to
interface5Vto3V.

74V2T70

TRIPLE BUFFER

PIN CONNECTION AND IEC LOGIC SYMBOLS

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2T70STR

SOT23-8L

74V2T70

2/7

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

TRUTH TABLE

ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.

RECOMMENDED OPERATING CONDITIONS

1) VINfrom0.8V to 2V

PIN No SYMBOL NAME QND FUNCTION

1, 3, 6 1A, 2A, 3A Data Inputs
7, 5, 2 1Y, 2Y, 3Y Data Outputs

4 GND Ground (0V)
8

V

CC

Positive Supply Voltage

AY

LL

HH

Symbol Parameter Value Unit

V

CC

Supply Voltage

-0.5 to +7.0 V

V

I

DC Input Voltage

-0.5 to +7.0 V

V

O

DC Output Voltage -0.5 to VCC+ 0.5

V

I

IK

DC Input Diode Current

-20 mA

I

OK

DC Output Diode Current

± 20 mA

I

O

DC Output Current

± 25 mA

I

CC

or I

GND

DC VCCor Ground Current

± 50 mA

T

stg

Storage Temperature

-65 to +150 °C

T

L

Lead Temperature (10 sec)

260 °C

Symbol Parameter Value Unit

V

CC

Supply Voltage

4.5 to 5.5 V

V

I

Input Voltage

0 to 5.5 V

V

O

Output Voltage 0 to V

CC

V

T

op

Operating Temperature

-55 to 125 °C

dt/dv

Input Rise and Fall Time (note 1) (V

CC

=5.0±0.5V)

0 to 20 ns/V

74V2T70

3/7

DC SPECIFICATIONS

AC ELECTRICAL CHARACTERISTICS (Input t

r=tf

=3ns)

(*) Voltage range is5.0V ± 0.5V

CAPACITIVE CHARACTERISTICS

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

CC(opr)=CPDxVCCxfIN+ICC

/3

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

V

IH

High Level Input
Voltage

4.5to

5.5

222V

V

IL

Low Level Input
Voltage

4.5to

5.5

0.8 0.8 0.8 V

V

OH

High Level Output
Voltage

4.5

IO=-50 µA 4.4 4.5 4.4 4.4 V

4.5

I

O

=-8 mA 3.94 3.8 3.7

V

OL

Low Level Output
Voltage

4.5

IO=50 µA 0.0 0.1 0.1 0.1 V

4.5

I

O

=8 mA 0.36 0.44 0.55

I

I

Input Leakage
Current

0to

5.5

VI= 5.5V or GND

± 0.1 ± 1.0 ± 1.0 µA

I

CC

Quiescent Supply
Current

5.5

V

I=VCC

or GND

11020µA

+

I

CC

Additional Worst
Case Supply
Current

5.5

One Input at 3.4V,
other input at V

CC

or GND

1.35 1.5 1.5 mA

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

C

L

(pF)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

t

PLH

t

PHL

Propagation Delay
Time

5.0 (*) 15 3.6 6.0 1.0 7.0 1.0 8.0
ns

5.0 (*) 50 4.0 6.5 1.0 7.5 1.0 8.5

Symbol Parameter

Test Condition Value

Unit

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

C

IN

Input Capacitance

410 10 10pF

C

PD

Power Dissipation
Capacitance
(note 1)

14 pF