SGS Thomson Microelectronics 74V2T32STR, 74V2T32CTR Datasheet
1/7June 2003
■ HIGH SPEED: t
PD
= 4.6ns (TYP.) at VCC=5V
■ LOW POWER DISSIPATION:
I
CC
=1µA(MAX.) atTA=25°C
■ COMPATIBLE WITHTTL OUTPUTS:
V
IH
=2V(MIN),VIL=0.8V(MAX)
■ POWER DOWN PROT ECTION ON INPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
|=IOL=8mA(MIN)
■ BALANCED PROPAGATION DELAYS:
t
PLH
≅ t
PHL
■ OPERATING VOLTAGE RANG E:
V
CC
(OPR) = 4.5V to 5.5V
■ IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V2T32 is an advanced high-speed CMOS
DUAL 2-INPUT OR GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology.
The internal circuit is composed of 3 st ages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on all inputs
and outpu ts and 0 t o 7V can be accepted on
inputs with no regard to the s upply voltage.
This device can be used to interface 5V to 3V
systems and it is ideal for portable applications
like personal digital assistant and all
battery-powered equipment.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them ESD immunity and transient excess voltage.
74V2T32
DUAL 2-INPUT OR GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE T & R
SOT23-8L 74V2T08STR
SOT23-8L
74V2T32
2/7
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is
not implied
RECOMMENDED OPERATING CONDITIONS
1) VINfrom 0.8V to 2V
PIN No SYMBOL NAME QND FUNCTION
1, 5 1A, 2A Data Input
2, 6 1B, 2B Data Input
7, 3 1Y, 2Y Data Output
4 GND Ground (0V)
8
V
CC
Positive Supply Voltage
nA nB nY
LLL
LHH
HLH
HHH
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7.0 V
V
I
DC Input Voltage
-0.5 to +7.0 V
V
O
DC Output Voltage -0.5 to VCC+ 0.5
V
I
IK
DC Input Diode Current
-20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 25 mA
I
CC
or I
GND
DC VCCor Ground Current
± 50 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
300 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage
4.5 to 5.5 V
V
I
Input Voltage
0 to 5.5 V
V
O
Output Voltage 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
dt/dv
Input Rise and Fall Time (note 1) (V
CC
=5.0±0.5V)
0 to 20 ns/V
74V2T32
3/7
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (Input t
r=tf
=3ns)
(*) Voltage range is5.0V ± 0.5V
CAPACITANCE CHARACTERISTICS
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. I
CC(opr)=CPDxVCCxfIN+ICC
/2
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
IH
High Level Input
Voltage
4.5to
5.5
222V
V
IL
Low Level Input
Voltage
4.5to
5.5
0.8 0.8 0.8 V
V
OH
High Level Output
Voltage
4.5
IO=-50 µA 4.4 4.5 4.4 4.4 V
4.5
I
O
=-8 mA 3.94 3.8 3.7
V
OL
Low Level Output
Voltage
4.5
IO=50 µA 0.0 0.1 0.1 0.1 V
4.5
I
O
=8 mA 0.36 0.44 0.55
I
I
Input Leakage
Current
0to
5.5
VI= 5.5V or GND
± 0.1 ± 1.0 ± 1.0 µA
I
CC
Quiescent Supply
Current
5.5
V
I=VCC
or GND
11020µA
+
I
CC
Additional Worst
Case Supply
Current
5.5
One Input at 3.4V,
other input at V
CC
or GND
1.35 1.5 1.5 mA
I
OPD
Output Leakage
Current
0
V
OUT
=5.5V
0.5 5.0 5.0 µA
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
C
L
(pF)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
t
PLH
t
PHL
Propagation Delay
Time
5.0 (*) 15 4.6 7.0 1.0 8.0 1.0 9.0
ns
5.0 (*) 50 5.1 7.5 1.0 8.5 1.0 9.5
Symbol Parameter
Test Condition Value
Unit
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
C
IN
Input Capacitance
410 10 10pF
C
PD
Power Dissipation
Capacitance
(note 1)
12 pF
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