SGS Thomson Microelectronics 74V2T132STR, 74V2T132CTR Datasheet
1/7June 2003
■ HIGH SPEED: t
PD
= 3.7 ns (TYP.) at VCC=5V
■ LOW POWER DISSIPATION:
I
CC
=1µA (MAX.) at TA=25°C
■ TYPICAL HYSTERESIS: 0.8V at V
CC
=4.5V
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
|=IOL=8mA(MIN)
■ BALANCED PROPAGATION DELAYS:
t
PLH
≅ t
PHL
■ OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 4.5V to 5.5V
■ IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V2T132 is an advanced high-speed CMOS
SINGLE 2-INPUT NAND GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology.
Pin configuration and function are the s ame as
those of the 74V2T00 but the 74 V2T132 has
hysteresis.
The internal circuit is composed o f 3 st ages
including buffer output, w hich provide high noise
immunity and stable output.
Power down protection is provide d on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
usedto interface 5V to 3V.
74V2T132
DUAL 2-INPUT SHMITT TRIGGER NAND GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE T & R
SOT23-8L 74V2T132STR
SOT23-8L
74V2T132
2/7
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
1) V
CC
=0V
2) Highor Low State
RECOMMENDED OPERATING CONDITIONS
1) VCC=0V
2) Highor Low State
PIN No SYMBOL NAME QND FUNCTION
1, 5 1A, 2A Data Input
2, 6 1B, 2B Data Input
7, 3 1Y, 2Y Data Output
4 GND Ground (0V)
8
V
CC
Positive Supply Voltage
ABY
LLH
LHH
HLH
HHL
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7.0 V
V
I
DC Input Voltage
-0.5 to +7.0 V
V
O
DC Output Voltage (see note 1)
-0.5 to +7.0 V
V
O
DC Output Voltage (see note 2) -0.5 to VCC+ 0.5
V
I
IK
DC Input Diode Current
-20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 25 mA
I
CC
or I
GND
DC VCCor Ground Current
± 50 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
300 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage
4.5 to 5.5 V
V
I
Input Voltage
0 to 5.5 V
V
O
Output Voltage (see note 1)
0 to 5.5 V
V
O
Output Voltage (see note 2) 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
74V2T132
3/7
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (Input t
r=tf
=3ns)
(*) Voltage rangeis 5.0V ± 0.5V
CAPACITANCE CHARACTERISTICS
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. I
CC(opr)=CPDxVCCxfIN+ICC
/2
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
t+
High Level
Threshold Voltage
4.5 0.9 2.0 0.9 2.0 0.9 2.0
V
5.5 1.1 2.0 1.1 2.0 1.1 2.0
V
t-
Low Level
Threshold Voltage
4.5 0.5 1.5 0.5 1.5 0.5 1.5
V
5.5 0.6 1.6 0.6 1.6 0.6 1.6
V
h
Hysteresis Voltage 4.5 0.4 1.4 0.4 1.4 0.4 1.4
V
5.5 0.5 1.6 0.5 1.6 0.5 1.6
V
OH
High Level Output
Voltage
4.5
IO=-50 µA
4.4 4.5 4.4 4.4
V
4.5
I
O
=-8 mA
3.94 3.8 3.7
V
OL
Low Level Output
Voltage
4.5
IO=50 µA
0.0 0.1 0.1 0.1
V
4.5
I
O
=8 mA
0.36 0.44 0.55
I
I
Input Leakage
Current
0to
5.5
VI= 5.5V or GND
± 0.1 ± 1.0 ± 1.0 µA
I
CC
Quiescent Supply
Current
5.5
V
I=VCC
or GND
11020µA
+
I
CC
Additional Worst
Case Supply
Current
5.5
One Input at 3.4V,
other input at V
CC
or GND
1.35 1.5 1.5 mA
I
OPD
Output Leakage
Current
0
V
OUT
=5.5V
0.5 5.0 5.0 µA
Symbol Parameter
Test Condition Value
Unit
V
CC
(*)
(V)
C
L
(pF)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
t
PLH
t
PHL
Propagation Delay
Time
5.0 15 3.7 5.5 1.0 6.5 1.0 6.5
ns
5.0 50 5.2 7.5 1.0 8.5 1.0 8.5
Symbol Parameter
Test Condition Value
Unit
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
C
IN
Input Capacitance
410 10 10pF
C
PD
Power Dissipation
Capacitance
(note 1)
19 pF
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