SGS Thomson Microelectronics 74V2T126STR, 74V2T126CTR Datasheet

1/8June 2003

■ HIGH SPEED: t

PD

= 3.8ns (TYP.) at VCC=5V

■ LOW POWER DISSIPATION:

I

CC

=1µA(MAX.) atTA=25°C

■ COMPATIBLE WITHTTL OUTPUTS:

V

IH

=2V(MIN),VIL=0.8V(MAX)

■ POWER DOWN PROT ECTION ON INPUTS

AND OUTPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

OH

|=IOL=8mA(MIN)

■ BALANCED PROPAGATION DELAYS:

t

PLH

≅ t

PHL

■ OPERATING VOLTAGE RANG E:

V

CC

(OPR) = 4.5V to 5.5V

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2T126 is an advanced high-speed CMOS DUAL BUS BUFFER fabricated with sub-micron silicon gate and double-layer me tal wiring C

2

MOS

technology. 3-STATE control input nG has to be set LOW to

place the out put into the high impedance state.

Power down protection is provided on all inputs and outputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 3V to 5V systems and it is ideal for portable ap plicat ions like personal digital assistant, camcorder and all battery-powered equipment. All inputs and outputs are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage.

74V2T126

DUAL BUS BUFFER (3-STATE)

PIN CONNECTION AND IEC LOGIC SYMBOLS

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2T126STR

SOT23-8L

74V2T126

2/8

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

TRUTH TABLE

X: "H" or "L" Z: HighImpedance

ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.

RECOMMENDED OPERATING CONDITIONS

1) VINfrom0.8V to 2V

PIN No SYMBOL NAME AND FUNCTION

1, 7 1G, 2G Output Enable Inputs 2, 5 1A, 2A Data Inputs 3, 6 2Y, 1Y Data Outputs

4 GND Ground (0V) 8

V

CC

Positive Supply Voltage

nA nG nY

XLZ

LHL

HHH

Symbol Parameter Value Unit

V

CC

Supply Voltage

-0.5 to +7.0 V

V

I

DC Input Voltage

-0.5 to +7.0 V

V

O

DC Output Voltage -0.5 to VCC+ 0.5

V

I

IK

DC Input Diode Current

− 20 mA

I

OK

DC Output Diode Current

− 20 mA

I

O

DC Output Current

± 25 mA

I

CC

or I

GND

DC VCCor Ground Current

± 50 mA

T

stg

Storage Temperature

-65 to +150 °C

T

L

Lead Temperature (10 sec)

260 °C

Symbol Parameter Value Unit

V

CC

Supply Voltage

4.5 to 5.5 V

V

I

Input Voltage

0 to 5.5 V

V

O

Output Voltage 0 to V

CC

V

T

op

Operating Temperature

-55 to 125 °C

dt/dv

Input Rise and Fall Time (note 1) (V

CC

=5.0±0.5V)

0 to 20 ns/V

74V2T126

3/8

DC SPECIFICATION

AC ELECTRICAL CHARACTERISTICS (Input t

r=tf

=3ns)

(*) Voltage range is5.0V ± 0.5V

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

V

IH

High Level Input Voltage

4.5to

5.5

2.0 2.0 2.0

V

IL

Low Level Input Voltage

4.5to

5.5

0.8 0.8 0.8

V

OH

High Level Output Voltage

4.5

IO=-50 µA

4.4 4.5 4.4 4.4 V

4.5

I

O

=-8 mA

3.94 3.8 3.7

V

OL

Low Level Output Voltage

4.5

IO=50 µA

0.0 0.1 0.1 0.1 V

4.5

I

O

=8 mA

0.36 0.44 0.55

I

OZ

High Impedance Output Leakage Current

5.5

V

I=VIH

or V

IL

VO= 5.5 or GND

±0.25 ± 2.5 ± 5 µA

I

Input Leakage Current

0to

5.5

V

I

= 5.5V or GND

± 0.1 ± 1 ± 1 µA

I

OPD

Power downOutput Leakage Current

0

V

O

= 5.5

0.5 5 10 µA

I

CC

Quiescent Supply Current

5.5

V

I=VCC

or GND

11020µA

+

I

CC

Additional Worst Case Supply Current

5.5

One Input at 3.4V, other input at V

CC

or GND

1.35 1.5 1.5 mA

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

C

L

(pF)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

t

PLH

t

PHL

Propagation Delay Time

5.0

(*)

15 3.8 5.5 1.0 6.5 1.0 7.5

ns

5.0

(*)

50 4.3 6.5 1.0 7.5 1.0 8.5

t

PLZ

t

PHZ

Output Disable Time

5.0

(*)

15

R

L

=1KΩ

3.6 5.0 1.0 6.0 1.0 7.0

5.0

(*)

50

R

L

=1KΩ

5.1 7.0 1.0 8.0 1.0 9.0

t

PZL

t

PZH

Output Enable Time

5.0

(*)

15

R

L

=1KΩ

3.7 5.9 1.0 7.0 1.0 8.0

5.0

(*)

50

R

L

=1KΩ

4.1 6.5 1.0 7.5 1.0 8.5