SGS Thomson Microelectronics 74V2T125STR, 74V2T125CTR Datasheet

74V2T125

DUAL BUS BUFFER (3-STATE)

■ HIGH SPEED: t

■ LOW POWER DISSIPATION:

=1µA(MAX.) atTA=25°C

I

CC

■ COMPATIBLE WITHTTL OUTPUTS:

V

=2V(MIN),VIL=0.8V(MAX)

IH

■ POWER DOWN PROT ECTION ON INPUTS

= 3.8ns (TYP.) at VCC=5V

PD

AND OUTPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

|=IOL=8mA(MIN)

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

PHL

■ OPERATING VOLTAGE RANG E:

(OPR) = 4.5V to 5.5V

V

CC

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2T125 is an advanced high-speed CMOS
DUAL BUS BUFFER fabricated with sub-micron
silicon gate and double-layer me tal wiring C

2

MOS

technology.
3-STATE control input nG

has to be set H IGH to

place the out put into the high impedance state.

SOT23-8L

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2T125STR

Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
device can be used to interface 3V to 5V systems
and it is ideal for portable ap plicat ions like
personal digital assistant, camcorder and all
battery-powered equipment.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them ESD immunity and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/8June 2003

74V2T125

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN N° SYMBOL NAME AND FUNCTION

1, 7 1G
2, 5 1A, 2A Data Inputs
3, 6 2Y, 1Y Data Outputs

4 GND Ground (0V)
8

TRUTH TABLE

V

,2G Output Enable Inputs

CC

Positive Supply Voltage

AG

Y

XHZ

LLL

HLH

X: "H" or "L"
Z: HighImpedance

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

I

OK

I

or I

I

CC

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage -0.5 to VCC+ 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

-0.5 to +7.0 V

-0.5 to +7.0 V
V

− 20 mA

− 20 mA
± 25 mA
± 50 mA

-65 to +150 °C

260 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V
V
T

dt/dv

1) VINfrom0.8V to 2V

Supply Voltage

CC

Input Voltage

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (note 1) (V

=5.0±0.5V)

CC

4.5 to 5.5 V
0 to 5.5 V

CC

-55 to 125 °C
0 to 20 ns/V

2/8

V

DC SPECIFICATION

Symbol Parameter

V

V

V

I

+

High Level Input

IH

Voltage

V

Low Level Input

IL

Voltage
High Level Output

OH

Voltage
Low Level Output

OL

Voltage
High Impedance

I

OZ

Output Leakage
Current

Input Leakage

I

I

Current
Power downOutput

OPD

Leakage Current
Quiescent Supply

I

CC

Current

I

Additional Worst

CC

Case Supply
Current

Test Condition Value

= 25°C

T

V

CC

(V)

4.5to

5.5

A

Min. Typ. Max. Min. Max. Min. Max.

0.8 0.8 0.8 V

4.5to

5.5

4.5

4.5

4.5

4.5

5.5

0to

5.5
0

5.5

IO=-50 µA

=-8 mA

I

O

IO=50 µA

=8 mA

I

O

I=VIH

or V

IL

V

VO= 5.5 or GND

V

= 5.5V or GND

I

= 5.5

V

O

V

I=VCC

or GND

4.4 4.5 4.4 4.4

3.94 3.8 3.7

0.0 0.1 0.1 0.1

One Input at 3.4V,
other input at V

5.5

CC

or GND

74V2T125

-40 to 85°C -55 to 125°C

2.0 2.0 2.0

0.36 0.44 0.55

±0.25 ± 2.5 ± 5 µA

± 0.1 ± 1 ± 1 µA

0.5 5 10 µA

11020µA

1.35 1.5 1.5 mA

Unit

V

V

V

AC ELECTRICAL CHARACTERISTICS (Input t

Test Condition Value

Symbol Parameter

t
t

t
t

t
t

(*) Voltage range is5.0V ± 0.5V

Propagation Delay

PLH

Time

PHL

Output Disable

PLZ

Time

PHZ

Output Enable

PZL

Time

PZH

V

(V)

5.0

5.0

5.0

5.0

5.0

5.0

C

CC

L

(pF)

(*)

15 3.8 5.5 1.0 6.5 1.0 7.5

(*)

50 4.3 6.5 1.0 7.5 1.0 8.5

(*)
(*)
(*)
(*)

15
50
15
50

R

L

R

L

R

L

R

L

=1KΩ
=1KΩ
=1KΩ
=1KΩ

=3ns)

r=tf

= 25°C

T

A

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

3.6 5.0 1.0 6.0 1.0 7.0

5.1 7.0 1.0 8.0 1.0 9.0

3.7 5.9 1.0 7.0 1.0 8.0

4.1 6.5 1.0 7.5 1.0 8.5

Unit

ns

3/8