SGS Thomson Microelectronics 74V2T08STR, 74V2T08CTR Datasheet

1/7June 2003

■ HIGH SPEED: t

PD

= 3.8ns (TYP.) at VCC=5V

■ LOW POWER DISSIPATION:

I

CC

=1µA(MAX.) atTA=25°C

■ COMPATIBLE WITHTTL OUTPUTS

V

IH

=2V(MIN),VIL=0.8V(MAX)

■ POWER DOWN PROT ECTION ON INPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

OH

|=IOL=8mA(MIN)atVCC=4.5V

■ BALANCED PROPAGATION DELAYS:

t

PLH

≅ t

PHL

■ OPERATING VOLTAGE RANG E:

V

CC

(OPR) = 4.5V to 5.5V

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2T08 is an advanced high-speed CMOS
DUAL 2-INPUT AND GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C

2

MOS technology.

The internal circuit i s composed of 2 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on all inputs
and outpu ts and 0 t o 7V can be accepted on
inputs with no regard to the s upply voltage.
This device can be used t o interface 5V to 3V.

74V2T08

DUAL 2-INPUT AND GATE

PIN CONNECTION AND IEC LOGIC SYMBOLS

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2T08STR

SOT23-8L

74V2T08

2/7

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

TRUTH TABLE

ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied

RECOMMENDED OPERATING CONDITIONS

1) VINfrom0.8 to 2V

PIN N° SYMBOL NAME QND FUNCTION

1, 5 1A, 2A Data Input
2, 6 1B, 2B Data Input
7, 3 1Y, 2Y Data Output

4 GND Ground (0V)
8

V

CC

Positive Supply Voltage

nA nB nY

LLL

LHL
HLL
HHH

Symbol Parameter² Value Unit

V

CC

Supply Voltage

-0.5 to +7.0 V

V

I

DC Input Voltage

-0.5 to +7.0 V

V

O

DC Output Voltage -0.5 to VCC+ 0.5

V

I

IK

DC Input Diode Current

-20 mA

I

OK

DC Output Diode Current

± 20 mA

I

O

DC Output Current

± 25 mA

I

CC

or I

GND

DC VCCor Ground Current

± 50 mA

T

stg

Storage Temperature

-65 to +150 °C

T

L

Lead Temperature (10 sec)

260 °C

Symbol Parameter Value Unit

V

CC

Supply Voltage

4.5 to 5.5 V

V

I

Input Voltage

0 to 5.5 V

V

O

Output Voltage 0 to V

CC

V

T

op

Operating Temperature

-55 to 125 °C

dt/dv

Input Rise and Fall Time (note 1) (V

CC

=5.0±0.5V)

0 to 20 ns/V

74V2T08

3/7

DC SPECIFICATION

AC ELECTRICAL CHARACTERISTICS (Input t

r=tf

=3ns)

(*) Voltage range is3.3V ± 0.3V
(**) Voltage range is 5.0V ± 0.5V

CAPACITANCE CHARACTERISTICS

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. I

CC(opr)=CPDxVCCxfIN+ICC

/2

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

V

IH

High Level Input
Voltage

4.5to

5.5

222

V

V

IL

Low Level Input
Voltage

4.5to

5.5

0.8 0.8 0.8
V

V

OH

High Level Output
Voltage

4.5

IO=-50 µA

4.4 4.5 4.4 4.4
V

4.5

I

O

=-8 mA

3.94 3.8 3.7

V

OL

Low Level Output
Voltage

4.5

IO=50 µA

0.0 0.1 0.1 0.1
V

4.5

I

O

=8 mA

0.36 0.44 0.55

I

I

Input Leakage
Current

0to

5.5

VI= 5.5V or GND

± 0.1 ± 1 ± 1 µA

I

CC

Quiescent Supply
Current

5.5

V

I=VCC

or GND

11020µA

∆I

CC

Additional Worst
Case Supply
Current

5.5

One Input at 3.4V,
other input at V

CC

or GND

1.35 1.5 1.5 mA

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

C

L

(pF)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

t

PLHtPHL

Propagation Delay
Time

5.0

(**)

15 3.8 5.5 1.0 6.5 1.0 7.5

ns

5.0

(**)

50 4.3 6.5 1.0 7.5 1.0 8.5

Symbol Parameter

Test Condition Value

Unit

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

C

IN

Input Capacitance

410 10 10pF

C

PD

Power Dissipation
Capacitance
(note 1)

19 pF