SGS Thomson Microelectronics 74V2T08STR, 74V2T08CTR Datasheet

1/7June 2003
HIGH SPEED: t
PD
= 3.8ns (TYP.) at VCC=5V
LOW POWER DISSIPATION:
CC
=1µA(MAX.) atTA=25°C
COMPATIBLE WITHTTL OUTPUTS
V
IH
=2V(MIN),VIL=0.8V(MAX)
POWER DOWN PROT ECTION ON INPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
|=IOL=8mA(MIN)atVCC=4.5V
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
OPERATING VOLTAGE RANG E:
V
CC
(OPR) = 4.5V to 5.5V
IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V2T08 is an advanced high-speed CMOS DUAL 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C
2
MOS technology.
The internal circuit i s composed of 2 stages including buffer output, which provide high noise immunity and stable output. Power down protection is provided on all inputs and outpu ts and 0 t o 7V can be accepted on inputs with no regard to the s upply voltage. This device can be used t o interface 5V to 3V.
74V2T08
DUAL 2-INPUT AND GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE T & R
SOT23-8L 74V2T08STR
SOT23-8L
74V2T08
2/7
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied
RECOMMENDED OPERATING CONDITIONS
1) VINfrom0.8 to 2V
PIN N° SYMBOL NAME QND FUNCTION
1, 5 1A, 2A Data Input 2, 6 1B, 2B Data Input 7, 3 1Y, 2Y Data Output
4 GND Ground (0V) 8
V
CC
Positive Supply Voltage
nA nB nY
LLL
LHL HLL HHH
Symbol Parameter² Value Unit
V
CC
Supply Voltage
-0.5 to +7.0 V
V
I
DC Input Voltage
-0.5 to +7.0 V
V
O
DC Output Voltage -0.5 to VCC+ 0.5
V
I
IK
DC Input Diode Current
-20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 25 mA
I
CC
or I
GND
DC VCCor Ground Current
± 50 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
260 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage
4.5 to 5.5 V
V
I
Input Voltage
0 to 5.5 V
V
O
Output Voltage 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
dt/dv
Input Rise and Fall Time (note 1) (V
CC
=5.0±0.5V)
0 to 20 ns/V
74V2T08
3/7
DC SPECIFICATION
AC ELECTRICAL CHARACTERISTICS (Input t
r=tf
=3ns)
(*) Voltage range is3.3V ± 0.3V (**) Voltage range is 5.0V ± 0.5V
CAPACITANCE CHARACTERISTICS
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average current can be obtained by the following equation. I
CC(opr)=CPDxVCCxfIN+ICC
/2
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
IH
High Level Input Voltage
4.5to
5.5
222
V
V
IL
Low Level Input Voltage
4.5to
5.5
0.8 0.8 0.8 V
V
OH
High Level Output Voltage
4.5
IO=-50 µA
4.4 4.5 4.4 4.4 V
4.5
I
O
=-8 mA
3.94 3.8 3.7
V
OL
Low Level Output Voltage
4.5
IO=50 µA
0.0 0.1 0.1 0.1 V
4.5
I
O
=8 mA
0.36 0.44 0.55
I
I
Input Leakage Current
0to
5.5
VI= 5.5V or GND
± 0.1 ± 1 ± 1 µA
I
CC
Quiescent Supply Current
5.5
V
I=VCC
or GND
11020µA
I
CC
Additional Worst Case Supply Current
5.5
One Input at 3.4V, other input at V
CC
or GND
1.35 1.5 1.5 mA
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
C
L
(pF)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
t
PLHtPHL
Propagation Delay Time
5.0
(**)
15 3.8 5.5 1.0 6.5 1.0 7.5
ns
5.0
(**)
50 4.3 6.5 1.0 7.5 1.0 8.5
Symbol Parameter
Test Condition Value
Unit
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
C
IN
Input Capacitance
410 10 10pF
C
PD
Power Dissipation Capacitance (note 1)
19 pF
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