SGS Thomson Microelectronics 74V2T07STR, 74V2T07CTR Datasheet

1/7June 2003

■ HIGH SPEED: t

PD

= 4.3ns (TYP.) at VCC=5V

■ LOW POWER DISSIPATION:

I

CC

=1µA(MAX.) atTA=25°C

■ COMPATIBLE WITHTTL OUTPUTS:

V

IH

=2V(MIN),VIL=0.8V(MAX)

■ POWER DOWN PROT ECTION ON INPUT

■ OPERATING VOLTAGE RANGE:

V

CC

(OPR) = 4.5V to 5.5V

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2T07 is an advanced high-speed CMOS
TRIPLE BUFFE R (OPEN DRAIN) fabricated with
sub-micron silicon gate and double-layer metal
wiring C

2

MOS technology.
The internal circuit i s composed of 2 stages
including buffer output, which provide high noise
immunity and stable output.

Power down protection is prov ided on input and 0
to 7V c an be accepted on input with no regard t o
the supply voltage. This device can be us ed to
interface5Vto3V.

74V2T07

TRIPLE BUFFER (OPEN DRAIN)

PIN CONNECTION AND IEC LOGIC SYMBOLS

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2T07STR

SOT23-8L

74V2T07

2/7

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

TRUTH TABLE

Z: HighImpedance

ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.

RECOMMENDED OPERATING CONDITIONS

1) VINfrom0.8V to 2V

PIN N° SYMBOL NAME QND FUNCTION

1, 3, 6 1A, 2A, 3A Data Inputs
7, 5, 2 1Y, 2Y, 3Y Data Outputs

4 GND Ground (0V)
8

V

CC

Positive Supply Voltage

AY

LL

HZ

Symbol Parameter Value Unit

V

CC

Supply Voltage

-0.5 to +7.0 V

V

I

DC Input Voltage

-0.5 to +7.0 V

V

O

DC Output Voltage -0.5 to VCC+ 0.5

V

I

IK

DC Input Diode Current

-20 mA

I

OK

DC Output Diode Current

± 20 mA

I

O

DC Output Current

± 25 mA

I

CC

or I

GND

DC VCCor Ground Current

± 50 mA

T

stg

Storage Temperature

-65 to +150 °C

T

L

Lead Temperature (10 sec)

260 °C

Symbol Parameter Value Unit

V

CC

Supply Voltage

4.5 to 5.5 V

V

I

Input Voltage

0 to 5.5 V

V

O

Output Voltage 0 to V

CC

V

T

op

Operating Temperature

-55 to 125 °C

dt/dv

Input Rise and Fall Time (note 1) (V

CC

=5.0±0.5V)

0 to 20 ns/V

74V2T07

3/7

DC SPECIFICATIONS

AC ELECTRICAL CHARACTERISTICS (Input t

r=tf

=3ns)

(*) Voltage range is5.0V ± 0.5V

CAPACITIVE CHARACTERISTICS

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

CC(opr)=CPDxVCCxfIN+ICC

/3

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

V

IH

High Level Input
Voltage

4.5to

5.5

222V

V

IL

Low Level Input
Voltage

4.5to

5.5

0.8 0.8 0.8 V

V

OL

Low Level Output
Voltage

4.5

IO=50 µA 0.0 0.1 0.1 0.1 V

4.5

I

O

=8 mA 0.36 0.44 0.55

I

OZ

High Impedance
Output Leakage
Current

5.5

VI=VIHor V

IL

VO=VCCor GND

±0.25 ± 2.5 ± 5.0 µA

I

I

Input Leakage
Current

0to

5.5

VI= 5.5V or GND

± 0.1 ± 1.0 ± 1.0 µA

I

CC

Quiescent Supply
Current

5.5

V

I=VCC

or GND

11020µA

∆I

CC

Additional Worst
Case Supply
Current

5.5

One Input at 3.4V,
other input at V

CC

or GND

1.35 1.5 1.5 mA

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

C

L

(pF)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

t

PZL

Enable Delay Time

5.0 (*) 15 3.7 7.0 1.0 8.0 1.0 9.0
ns

5.0 (*) 50 4.1 8.0 1.0 9.0 1.0 10.0

t

PLZ

Disable Delay Time

5.0 (*) 15 4.3 7.0 1.0 8.0 1.0 9.0
ns

5.0 (*) 50 4.7 8.0 1.0 9.0 1.0 10.0

Symbol Parameter

Test Condition Value

Unit

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

C

IN

Input Capacitance 4 10 10 10 pF

C

OUT

Output
Capacitance

5pF

C

PD

Power Dissipation
Capacitance
(note 1)

9pF