SGS Thomson Microelectronics 74V2T07STR, 74V2T07CTR Datasheet

1/7June 2003
HIGH SPEED: t
PD
= 4.3ns (TYP.) at VCC=5V
LOW POWER DISSIPATION:
CC
=1µA(MAX.) atTA=25°C
COMPATIBLE WITHTTL OUTPUTS:
V
IH
=2V(MIN),VIL=0.8V(MAX)
POWER DOWN PROT ECTION ON INPUT
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 4.5V to 5.5V
IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V2T07 is an advanced high-speed CMOS TRIPLE BUFFE R (OPEN DRAIN) fabricated with sub-micron silicon gate and double-layer metal wiring C
2
MOS technology. The internal circuit i s composed of 2 stages including buffer output, which provide high noise immunity and stable output.
Power down protection is prov ided on input and 0 to 7V c an be accepted on input with no regard t o the supply voltage. This device can be us ed to interface5Vto3V.
74V2T07
TRIPLE BUFFER (OPEN DRAIN)
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE T & R
SOT23-8L 74V2T07STR
SOT23-8L
74V2T07
2/7
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
Z: HighImpedance
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.
RECOMMENDED OPERATING CONDITIONS
1) VINfrom0.8V to 2V
PIN N° SYMBOL NAME QND FUNCTION
1, 3, 6 1A, 2A, 3A Data Inputs 7, 5, 2 1Y, 2Y, 3Y Data Outputs
4 GND Ground (0V) 8
V
CC
Positive Supply Voltage
AY
LL
HZ
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7.0 V
V
I
DC Input Voltage
-0.5 to +7.0 V
V
O
DC Output Voltage -0.5 to VCC+ 0.5
V
I
IK
DC Input Diode Current
-20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 25 mA
I
CC
or I
GND
DC VCCor Ground Current
± 50 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
260 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage
4.5 to 5.5 V
V
I
Input Voltage
0 to 5.5 V
V
O
Output Voltage 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
dt/dv
Input Rise and Fall Time (note 1) (V
CC
=5.0±0.5V)
0 to 20 ns/V
74V2T07
3/7
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (Input t
r=tf
=3ns)
(*) Voltage range is5.0V ± 0.5V
CAPACITIVE CHARACTERISTICS
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)=CPDxVCCxfIN+ICC
/3
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
IH
High Level Input Voltage
4.5to
5.5
222V
V
IL
Low Level Input Voltage
4.5to
5.5
0.8 0.8 0.8 V
V
OL
Low Level Output Voltage
4.5
IO=50 µA 0.0 0.1 0.1 0.1 V
4.5
I
O
=8 mA 0.36 0.44 0.55
I
OZ
High Impedance Output Leakage Current
5.5
VI=VIHor V
IL
VO=VCCor GND
±0.25 ± 2.5 ± 5.0 µA
I
I
Input Leakage Current
0to
5.5
VI= 5.5V or GND
± 0.1 ± 1.0 ± 1.0 µA
I
CC
Quiescent Supply Current
5.5
V
I=VCC
or GND
11020µA
I
CC
Additional Worst Case Supply Current
5.5
One Input at 3.4V, other input at V
CC
or GND
1.35 1.5 1.5 mA
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
C
L
(pF)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
t
PZL
Enable Delay Time
5.0 (*) 15 3.7 7.0 1.0 8.0 1.0 9.0 ns
5.0 (*) 50 4.1 8.0 1.0 9.0 1.0 10.0
t
PLZ
Disable Delay Time
5.0 (*) 15 4.3 7.0 1.0 8.0 1.0 9.0 ns
5.0 (*) 50 4.7 8.0 1.0 9.0 1.0 10.0
Symbol Parameter
Test Condition Value
Unit
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
C
IN
Input Capacitance 4 10 10 10 pF
C
OUT
Output Capacitance
5pF
C
PD
Power Dissipation Capacitance (note 1)
9pF
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