SGS Thomson Microelectronics 74V2T03STR, 74V2T03CTR Datasheet

1/7June 2003

■ HIGH SPEED: t

PD

= 5.4ns (TYP.) at VCC=5V

■ LOW POWER DISSIPATION:

I

CC

=1µA(MAX.) atTA=25°C

■ COMPATIBLE WITHTTL OUTPUTS:

V

IH

=2V(MIN),VIL=0.8V(MAX)

■ POWER DOWN PROT ECTION ON INPUTS

■ OPERATING VOLTAGE RANGE:

V

CC

(OPR) = 4.5V to 5.5V

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2T03 is an advanced high-speed CMOS
DUAL 2-INPUT OPEN DRAIN NAND GA TE
fabricated with sub-micron silicon gate and
double-layer metal wiring C

2

MOS technology.
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.
The device can, with an external pull-up resistor,
be used in wired AND configuration. This device

can also be used as a led driver in any other
application requiring current sink.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inp uts with no
regard to the supply voltage. This device can be
usedto interface 5V to 3V.

74V2T03

DUAL 2-INPUT OPEN DRAIN NAND GATE

PIN CONNECTION AND IEC LOGIC SYMBOLS

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2T03STR

SOT23-8L

74V2T03

2/7

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

TRUTH TABLE

Z: HighImpedance State

ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.

RECOMMENDED OPERATING CONDITIONS

1) VINfrom0.8V to 2V

PIN N° SYMBOL NAME QND FUNCTION

1, 5 1A, 2A Data Input
2, 6 1B, 2B Data Input
7, 3 1Y, 2Y Data Output

4 GND Ground (0V)
8

V

CC

Positive Supply Voltage

ABY

LLZ

LHZ
HLZ
HHL

Symbol Parameter Value Unit

V

CC

Supply Voltage

-0.5 to +7.0 V

V

I

DC Input Voltage

-0.5 to +7.0 V

V

O

DC Output Voltage -0.5 to VCC+ 0.5

V

I

IK

DC Input Diode Current

-20 mA

I

OK

DC Output Diode Current

± 20 mA

I

O

DC Output Current

+ 25 mA

I

CC

or I

GND

DC VCCor Ground Current

± 50 mA

T

stg

Storage Temperature

-65 to +150 °C

T

L

Lead Temperature (10 sec)

260 °C

Symbol Parameter Value Unit

V

CC

Supply Voltage

4.5 to 5.5 V

V

I

Input Voltage

0 to 5.5 V

V

O

Output Voltage 0 to V

CC

V

T

op

Operating Temperature

-55 to 125 °C

dt/dv

Input Rise and Fall Time (note 1) (V

CC

=5.0±0.5V)

0 to 20 ns/V

74V2T03

3/7

DC SPECIFICATIONS

AC ELECTRICAL CHARACTERISTICS (Input t

r=tf

=3ns)

(*) Voltage range is5.0V ± 0.5V

CAPACITIVE CHARACTERISTICS

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

CC(opr)=CPDxVCCxfIN+ICC

/2

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

V

IH

High Level Input
Voltage

4.5to

5.5

222V

V

IL

Low Level Input
Voltage

4.5to

5.5

0.8 0.8 0.8 V

V

OL

Low Level Output
Voltage

4.5

IO=50 µA 0.0 0.1 0.1 0.1 V

4.5

I

O

=8 mA 0.36 0.44 0.55

I

OZ

High Impedance
Output Leakage
Current

5.5

VI=VIHor V

IL

VO=VCCor GND

±0.25 ± 2.5 ± 5.0 µA

I

I

Input Leakage
Current

0to

5.5

VI= 5.5V or GND

± 0.1 ± 1.0 ± 1.0 µA

I

CC

Quiescent Supply
Current

5.5

V

I=VCC

or GND

11020µA

∆I

CC

Additional Worst
Case Supply
Current

5.5

One Input at 3.4V,
other input at V

CC

or GND

1.35 1.5 1.5 mA

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

C

L

(pF)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

t

PZL

Enable Delay Time

5.0 (*) 15 3.7 7.0 1.0 8.0 1.0 9.0
ns

5.0 (*) 50 4.1 8.0 1.0 9.0 1.0 10.0

t

PLZ

Disable Delay Time

5.0 (*) 15 5.4 7.0 1.0 8.0 1.0 9.0
ns

5.0 (*) 50 5.9 8.0 1.0 9.0 1.0 10.0

Symbol Parameter

Test Condition Value

Unit

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

C

IN

Input Capacitance

410 10 10pF

C

OUT

Output
Capacitance

510 10 10pF

C

PD

Power Dissipation
Capacitance
(note 1)

6pF