SGS Thomson Microelectronics 74V2G86STR, 74V2G86CTR Datasheet

1/7June 2003

■ HIGH SPEED: t

PD

= 4.8ns (TYP.) at VCC=5V

■ LOW POWER DISSIPATION:

I

CC

=1µA(MAX.) atTA=25°C

■ HIGH NOISE IMMUNITY:

V

NIH=VNIL

= 28% VCC(MIN.)

■ POWER DOWN PROTECTION ON INPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

OH

|=IOL=8mA(MIN)atVCC=4.5V

■ BALANCED PROPAGATION DELAYS:

t

PLH

≅ t

PHL

■ OPERATING VOLTAGE RANG E:

V

CC

(OPR) = 2V to 5.5V

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2G86 is an advanced high-speed CMOS DUAL 2-INPUT EXCLUSIVE OR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C

2

MOS technology.

Power down protection is provided on all inputs and 0 to 7V can be ac c ept ed on inputs with no regard to the supply voltage. This device can be usedto interface 5V to 3V.

74V2G86

DUAL 2-INPUT EXCLUSIVE OR GATE

PIN CONNECTION AND IEC LOGIC SYMBOLS

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2G86STR

SOT23-8L

74V2G86

2/7

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

TRUTH TABLE

ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.

RECOMMENDED OPERATING CONDITIONS

1) VINfrom30% to 70% of V

CC

PIN No SYMBOL NAME AND FUNCTION

1, 5 1A, 2A Data Input 2, 6 1B, 2B Data Input 7, 3 1Y, 2Y Data Output

4 GND Ground (0V) 8

V

CC

Positive Supply Voltage

ABY

LLL

LHH HLH HHL

Symbol Parameter Value Unit

V

CC

Supply Voltage

-0.5 to +7.0 V

V

I

DC Input Voltage

-0.5 to +7.0 V

V

O

DC Output Voltage -0.5 to VCC+ 0.5

V

I

IK

DC Input Diode Current

-20 mA

I

OK

DC Output Diode Current

± 20 mA

I

O

DC Output Current

± 25 mA

I

CC

or I

GND

DC VCCor Ground Current

± 50 mA

T

stg

Storage Temperature

-65 to +150 °C

T

L

Lead Temperature (10 sec)

260 °C

Symbol Parameter Value Unit

V

CC

Supply Voltage

2 to 5.5 V

V

I

Input Voltage

0 to 5.5 V

V

O

Output Voltage 0 to V

CC

V

T

op

Operating Temperature

-55 to 125 °C

dt/dv

Input Rise and Fall Time (note 1) (V

CC

=3.3±0.3V)

(V

CC

= 5.0 ± 0.5V)

0 to 100

0to20

ns/V ns/V

74V2G86

3/7

DC SPECIFICATIONS

AC ELECTRICAL CHARACTERISTICS (Input t

r=tf

=3ns)

(*) Voltage range is3.3V ± 0.3V (**) Voltage range is 5.0V ± 0.5V

CAPACITIVE CHARACTERISTICS

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

CC(opr)=CPDxVCCxfIN+ICC

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

V

IH

High Level Input Voltage

2.0 1.5 1.5 1.5 V

3.0to

5.5

0.7V

CC

0.7V

CC

0.7V

CC

V

IL

Low Level Input Voltage

2.0 0.5 0.5 0.5 V

3.0to

5.5

0.3V

CC

0.3V

CC

0.3V

CC

V

OH

High Level Output Voltage

2.0

IO=-50 µA

1.9 2.0 1.9 1.9

V

3.0

I

O

=-50 µA

2.9 3.0 2.9 2.9

4.5

I

O

=-50 µA

4.4 4.5 4.4 4.4

3.0

I

O

=-4 mA

2.58 2.48 2.4

4.5

I

O

=-8 mA

3.94 3.8 3.7

V

OL

Low Level Output Voltage

2.0

IO=50 µA

0.0 0.1 0.1 0.1

V

3.0

I

O

=50 µA

0.0 0.1 0.1 0.1

4.5

I

O

=50 µA

0.0 0.1 0.1 0.1

3.0

I

O

=4 mA

0.36 0.44 0.55

4.5

I

O

=8 mA

0.36 0.44 0.55

I

Input Leakage Current

0to

5.5

V

I

= 5.5V or GND

± 0.1 ± 1 ± 1 µA

I

CC

Quiescent Supply Current

5.5

V

I=VCC

or GND

11020µA

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

C

L

(pF)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

t

PLHtPHL

Propagation Delay Time

3.3

(*)

15 6.6 9.5 1.0 11.0 1.0 12.5

ns

3.3

(*)

50 7.3 10.5 1.0 12.0 1.0 13.5

5.0

(**)

15 4.8 6.8 1.0 8.0 1.0 9.0

5.0

(**)

50 5.3 7.5 1.0 9.0 1.0 10.0

Symbol Parameter

Test Condition Value

Unit

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

C

IN

Input Capacitance

410 10 10pF

C

PD

Power Dissipation Capacitance (note 1)

12 pF